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isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1086 APPLICATIONS ·Designed for low frequency power amplifier applications.

ISC

无锡固电

Epitaxial Planar NPN Silicon Transistor

Low Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB1086A ·Wide area of safe operation ·High breakdown voltage :BVCEO=160V(min) APPLICATIONS ·For low frequency power amplifier applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB1086A ·Wide area of safe operation ·High breakdown voltage :BVCEO=160V(min) APPLICATIONS ·For low frequency power amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

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SAVANTIC

更新时间:2025-12-25 10:05:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
24+
TO126
5000
只做原装正品现货 欢迎来电查询15919825718
三洋
2022+
TO-126
22315
原厂代理 终端免费提供样品
HIT
26+
TO126
12000
原装,正品
ROHM/罗姆
2022+
1000
全新原装 货期两周
三洋
23+
TO-126
50000
全新原装正品现货,支持订货
HIT
2517+
TO126
8850
只做原装正品现货或订货假一赔十!
HIT
25+
TO126
8000
只有原装
ROHM/罗姆
25+
120V1.5A10W
880000
明嘉莱只做原装正品现货
HIT
23+
TO126
800
全新原装正品现货,支持订货
HIT
24+
TO126
5000
全新原装正品,现货销售

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