isc Silicon NPN Darlington Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) · High DC Current Gain : hFE= 1000(Min) @IC= 10A · Low Saturation Voltage APPLICATIONS · Designed for high current switching applications.

Silicon NPN Epitaxial

Application Low frequency amplifier, Muting

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SB1065 • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SB1065 • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

Epitaxial Planar NPN Silicon Transistor

[ROHM] Low Freq. Power Amp. Epitaxial Planar NPN Silicon Transisor Features 1) Low collector saturation voltage: VCE(sat)=0.5V (Typ.) IC/iB=2A/0.2A 2) ASO is wide and resistant to breakdown. 3) Complementary pair with 2SB1065. 4) Easy installation into radiators.

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

NPN EPITAXIAL TYPE (PULSE MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE= 4000 (min) (VCE= 2 V, IC= 150 mA) • Low saturation voltage: VCE (sat)= 1.5 V (max) (IC= 1 A, IB= 1 mA)

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ IC= 1A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC=1A APPLICATIONS • Designed for general purpose amplifier and low speed switching applications.

Power transistor for low frequency applications

Feature：Darlington / Built-in damper diode\nPolarity：NPN\nComplementary Product：2SB1067\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 2 A \nCollector-emitter voltage VCEO 80 V ;

isc Silicon NPN Power Transistor

文件：257.529 Kbytes Page：2 Pages

Silicon NPN Epitaxial

Silicon NPN Power Transistors

文件：91.81 Kbytes Page：3 Pages

Silicon NPN Power Transistors

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TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINTON) PULSE MOTOR DRIVE, HANNER DIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS

Pulse Motor Drive, Hammer Drive Applications

文件：167.23 Kbytes Page：5 Pages

Pulse Motor Drive, Hammer Drive Applications

文件：167.23 Kbytes Page：5 Pages

Micro-Motor Drive, Hammer Drive Applications

文件：162.41 Kbytes Page：5 Pages

Micro-Motor Drive, Hammer Drive Applications

文件：162.41 Kbytes Page：5 Pages