NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 100V(Min) APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.

Silicon NPN epitaxial planer type(For low-frequency amplification)

For low-frequency amplification Complementary to 2SB0987 (2SB987) ■Features ● High collector to emitter voltage VCEO. ● Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.

Silicon NPN epitaxial planer type Transistor

For low-frequency amplification\nComplementary to 2SB0987 (2SB987)\n■ ● High collector to emitter voltage VCEO.\n● Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.;

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB903 APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. ·High-speed switching app

30V/12A High-Speed Switching Applications

30V/12A High-Speed Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB903 APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. ·High-speed switching app

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) • Large current capacity. • Complement to type 2SB904 APPLICATIONS • Large current switching of relay drivers, high-speed inverters, converters.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) • Large current capacity. • Complement to type 2SB904 APPLICATIONS • Large current switching of relay drivers, high-speed inverters, converters.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) • Large current capacity. • Complement to type 2SB904 APPLICATIONS • Large current switching of relay drivers, high-speed inverters, converters.

30V/20A High-Speed Switching Applications

30V/12A High-Speed Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Large current switching of relay drivers, high-speed inverters, converters.

SI NPN PLANAR DARLINGTON

Si NPN Planar Darlington Medium Speed Power Switching

SI NPN PLANAR DARLINGTON

Si NPN Planar Darlington Medium Speed Power Switching Features ● Built-in 60 V zener diode between C and B ● Uniformity in breakdown voltage ● Large energy handling capability : Es/b = 25mJ (min) ● High speed switching either at high or low temperature environments

SI NPN PLANAR DARLINGTON

Si NPN Planar Darlington Medium Speed Power Switching

封装/外壳：TO-226-3，TO-92-3 长体 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 120V 0.5A TO92L-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长体 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 120V 0.5A TO92L-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications

Silicon NPN Power Transistors

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SILICON NPN DIFFUSED JUNCTION TRANSISTOR

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Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications

Silicon NPN Power Transistors

文件：92.91 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：92.91 Kbytes Page：3 Pages