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2SD120晶体管资料

  • 2SD120别名:2SD120三极管、2SD120晶体管、2SD120晶体三极管

  • 2SD120生产厂家:日本日立公司

  • 2SD120制作材料:Si-NPN

  • 2SD120性质:低频或音频放大 (LF)_开关管 (S)

  • 2SD120封装形式:直插封装

  • 2SD120极限工作电压:60V

  • 2SD120最大电流允许值:1.5A

  • 2SD120最大工作频率:<1MHZ或未知

  • 2SD120引脚数:3

  • 2SD120最大耗散功率:1W

  • 2SD120放大倍数

  • 2SD120图片代号:C-40

  • 2SD120vtest:60

  • 2SD120htest:999900

  • 2SD120atest:1.5

  • 2SD120wtest:1

  • 2SD120代换 2SD120用什么型号代替:BC140,BC302,BCX40,BSW39,BSW65,BSX45,BSX46,BSX47,2N5320,2N5321,3DK30G,

2SD120价格

参考价格:¥1.1351

型号:2SD1207S 品牌:ON 备注:这里有2SD120多少钱,2026年最近7天走势,今日出价,今日竞价,2SD120批发/采购报价,2SD120行情走势销售排行榜,2SD120报价。
型号 功能描述 生产厂家 企业 LOGO 操作

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

ROHM

罗姆

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

ROHM

罗姆

MEDIUM POWER TRANSISTOR(-80V, -0.7A)

[ROHM] Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

ETCList of Unclassifed Manufacturers

未分类制造商

Bipolar Transistor

Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot

ONSEMI

安森美半导体

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. • M type

PANASONIC

松下

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. • M type

PANASONIC

松下

Large-Current Switching Applications

Large-Current Switching Applications Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

SANYO

三洋

Large-Current Switching Applications

Large-Current Switching Applications Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

SANYO

三洋

Large-Current Switching Applications

Features • FBET and MBIT processed • Low saturation voltage • Large current capacity and wide SOA Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring

ONSEMI

安森美半导体

Large-Current Switching Applications

Features • FBET and MBIT processed • Low saturation voltage • Large current capacity and wide SOA Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring

ONSEMI

安森美半导体

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Wide area of safe operation • High DC current gain • Darlington APPLICATIONS • Power regulator for line operated TV

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Wide area of safe operation • High DC current gain • Darlington APPLICATIONS • Power regulator for line operated TV

ISC

无锡固电

Silicon NPN Epitaxial, Darlington

• Low frequency power amplifier • Complementary pair with 2SA1193(K)

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial, Darlington

Application • Low frequency power amplifier • Complementary pair with 2SA1193(K)

RENESAS

瑞萨

Silicon NPN Epitaxial, Darlington

• Low frequency power amplifier • Complementary pair with 2SA1193(K)

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial, Darlington

Application • Low frequency power amplifier • Complementary pair with 2SA1193(K)

RENESAS

瑞萨

Silicon NPN Epitaxial, Darlington

Application • Low frequency power amplifier • Complementary pair with 2SA1193(K)

RENESAS

瑞萨

Silicon NPN Darlington Power Transistor

文件:253.82 Kbytes Page:2 Pages

ISC

无锡固电

Bipolar Transistor

文件:389.87 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:389.87 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Bipolar Transistor 50V, (??5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:389.87 Kbytes Page:10 Pages

ONSEMI

安森美半导体

丝印代码:B1203;High-Current Switching Applications

文件:519.36 Kbytes Page:10 Pages

SANYO

三洋

丝印代码:B1203;High-Current Switching Applications

文件:519.36 Kbytes Page:10 Pages

SANYO

三洋

Bipolar Transistor 50V, (??5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:389.87 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件:389.87 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:389.87 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Silicon NPN Darlington Power Transistor

文件:256.49 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

PANASONIC

松下

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

PANASONIC

松下

Large-Current Switching Applications

文件:122.86 Kbytes Page:4 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Darlington Transistors Large-Current Switching Applications

ONSEMI

安森美半导体

Silicon NPN transistor in a TO-92LM Plastic Package

文件:948.52 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

封装/外壳:TO-226-3,TO-92-3 长基体(成形引线) 包装:散装 描述:TRANS NPN 50V 2A 3MP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-226-3,TO-92-3 长体 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 2A 3MP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Silicon NPN Power Transistors

文件:108.63 Kbytes Page:3 Pages

SAVANTIC

2SD120产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Maximum Collector Base Voltage:

    60V

  • Maximum Collector Emitter Saturation Voltage:

    0.4@50mA@1AV

  • Maximum Collector Emitter Voltage:

    50V

  • Maximum DC Collector Current:

    2A

  • Maximum Emitter Base Voltage:

    6V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    1000mW

  • Maximum Transition Frequency:

    150(Typ)MHz

  • Type:

    NPN

更新时间:2026-5-14 14:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO
09+
TO-92L
340
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ONSEMI/安森美
26+
TO92
43600
全新原装现货,假一赔十
SANYO/三洋
25+
TO92L
90000
全新原装现货
SAN
24+
原厂封装
3500
原装现货假一罚十
SANYO
24+
TO-92
9500
郑重承诺只做原装进口现货
SANYO/三洋
24+
TO-92L
13000
原装,现货,正品,热卖
SANYO
PBFREE
8560
一级代理 原装正品假一罚十价格优势长期供货
SANYO/三洋
23+
TO92L
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
三年内
1983
只做原装正品
26+
N/A
54000
一级代理-主营优势-实惠价格-不悔选择

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