MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

MEDIUM POWER TRANSISTOR(-80V, -0.7A)

[ROHM] Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

Bipolar Transistor

Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot

Bipolar Transistor

Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. • M type

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. • M type

Large-Current Switching Applications

Large-Current Switching Applications Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

Large-Current Switching Applications

Large-Current Switching Applications Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

Large-Current Switching Applications

Features • FBET and MBIT processed • Low saturation voltage • Large current capacity and wide SOA Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring

Large-Current Switching Applications

Features • FBET and MBIT processed • Low saturation voltage • Large current capacity and wide SOA Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Wide area of safe operation • High DC current gain • Darlington APPLICATIONS • Power regulator for line operated TV

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Wide area of safe operation • High DC current gain • Darlington APPLICATIONS • Power regulator for line operated TV

Silicon NPN Epitaxial, Darlington

• Low frequency power amplifier • Complementary pair with 2SA1193(K)

Silicon NPN Epitaxial, Darlington

Application • Low frequency power amplifier • Complementary pair with 2SA1193(K)

Silicon NPN Epitaxial, Darlington

• Low frequency power amplifier • Complementary pair with 2SA1193(K)

Silicon NPN Epitaxial, Darlington

Application • Low frequency power amplifier • Complementary pair with 2SA1193(K)

Silicon NPN Epitaxial, Darlington

Application • Low frequency power amplifier • Complementary pair with 2SA1193(K)

Silicon NPN Darlington Power Transistor

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Bipolar Transistor

文件：389.87 Kbytes Page：10 Pages

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件：389.87 Kbytes Page：10 Pages

Bipolar Transistor 50V, (??5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件：389.87 Kbytes Page：10 Pages

High-Current Switching Applications

文件：519.36 Kbytes Page：10 Pages

High-Current Switching Applications

文件：519.36 Kbytes Page：10 Pages

Bipolar Transistor 50V, (??5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件：389.87 Kbytes Page：10 Pages

Bipolar Transistor

文件：389.87 Kbytes Page：10 Pages

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件：389.87 Kbytes Page：10 Pages

Silicon NPN Darlington Power Transistor

文件：256.49 Kbytes Page：2 Pages

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

Large-Current Switching Applications

文件：122.86 Kbytes Page：4 Pages

NPN Epitaxial Planar Silicon Darlington Transistors Large-Current Switching Applications

Silicon NPN transistor in a TO-92LM Plastic Package

文件：948.52 Kbytes Page：6 Pages

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：散装 描述：TRANS NPN 50V 2A 3MP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长体 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 2A 3MP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

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