isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) • High Power Dissipation- : PC= 25W(Max)@TC=25℃ • Complement to Type 2SB503 APPLICATIONS • Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.

Silicon NPN epitaxial planer type(For low-frequency amplification)

■ Features ● High foward current transfer ratio hFE. ● Low collector to emitter saturation voltage VCE(sat). ● High emitter to base voltage VEBO. ● Low noise voltage NV. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazin

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) • Large Collector Power Dissipation • Complement to Type 2SB812 APPLICATIONS • Designed for AF power amplifier applications.

SI NPN TRIPLE DIFFUSED PLANAR

AF Power Amplifier Complementary Pair with 2SB812, 2SB812A Features • Large PC

SI NPN TRIPLE DIFFUSED PLANAR

AF Power Amplifier Complementary Pair with 2SB812, 2SB812A Features • Large PC

Silicon NPN Epitaxial Transistor

■ Features ● High voltageVCEO=150V. ● Complimentary to 2SB768

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SD1033 is designed for Color TV Vertical Deflection Output, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage VCEO = 150 V ● Complementary to the 2SB1094.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·High DC Current Gain ·Excellent safe operating area ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color &B/W TV power supply ·Active power filter ·Industrial use power supply ·General purpose power ampli

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SD1033 is designed for Color TV vertical deflection output, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 150 V • Complement to 2SB768

HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS MOTOR CONTROL APPLICATIONS.

FEATURES: -High Voltage: VCE (SUS)-450V -Triple Diffused Design. -Darlington Design.

Silicon NPN Power Transistors

DESCRIPTION ·With MT-200 package ·Excellent safe operating area ·High current capability APPLICATIONS ·For electrical supply ,DC-DC converters and low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With MT-200 package ·Excellent safe operating area ·High current capability APPLICATIONS ·For electrical supply ,DC-DC converters and low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With MT-200 package ·Excellent safe operating area ·High current capability APPLICATIONS ·For electrical supply ,DC-DC converters and low frequency power amplifier applications

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.05A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Darlington Power Transistor

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SI NPN TRIPLE DIFFUSED PLANAR

Transistor-Bipolar Power Transistors

NPN Transistors

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TO-3P Plastic-Encapsulate Transistors

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Silicon NPN Power Transistors

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Silicon NPN Power Transistor

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