NPN Transistors

文件：887.89 Kbytes Page：3 Pages

GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS

文件：401.86 Kbytes Page：4 Pages

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ​​​​​​​● World Standard Miniature Package : SOT-89 ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007)

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor Features ● High collector to emitter voltage: VCEO > 120V.

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007) : VCEO > 100 V (2SD1006) ● Compl

High collector to emitter vlotage

Features High collector to emitter voltage: VCEO > 120V.

GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS

文件：401.86 Kbytes Page：4 Pages

NPN Transistors

文件：1.24294 Mbytes Page：3 Pages