2SD100晶体管资料

  • 2SD100别名:2SD100三极管、2SD100晶体管、2SD100晶体三极管

  • 2SD100生产厂家:日本东芝公司

  • 2SD100制作材料:Ge-NPN

  • 2SD100性质:低频或音频放大 (LF)_TR

  • 2SD100封装形式:直插封装

  • 2SD100极限工作电压:32V

  • 2SD100最大电流允许值:0.4A

  • 2SD100最大工作频率:<1MHZ或未知

  • 2SD100引脚数:3

  • 2SD100最大耗散功率:0.25W

  • 2SD100放大倍数

  • 2SD100图片代号:C-47

  • 2SD100vtest:32

  • 2SD100htest:999900

  • 2SD100atest:0.4

  • 2SD100wtest:0.25

  • 2SD100代换 2SD100用什么型号代替:AC127,AC176,AC187,2N1302,2SD72,2SD352,3BX81B,

型号 功能描述 生产厂家 企业 LOGO 操作

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1000 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.

NEC

瑞萨

NPN Silicon Epitaxial Transistor

■ Features ● Low collector saturation voltage. VCE(sat)

KEXIN

科信电子

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1000 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.

RENESAS

瑞萨

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Old Company Name in Catalogs and Other Documents

RENESAS

瑞萨

NPN Silicon Epitaxial Transistor

■ Features ● High collector saturation voltage. VCE(sat) > 80V ● Complimentary to 2SB800

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1001 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1005 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.)

NEC

瑞萨

NPN Silicon Epitaxia

Features ● World standard miniature package: SOT-89. ● High collector to base voltage: VCBO 100V. ● Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA).

KEXIN

科信电子

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● High Breakdown Voltage ● Excellent DC Current Gain Linearity

HTSEMI

金誉半导体

1A , 100V NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● High Breakdown Voltage ● Excellent DC Current Gain Linearity

SECOS

喜可士

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High Breakdown Voltage ● Excellent DC Current Gain Linearity

JIANGSU

长电科技

Plastic-Encapsulate Transistors

FEATURES • High Collector to Base Voltage. • Excellent DC Current Gain Linearity. • Complements to PNP type 2SB804.

HOTTECH

合科泰

NPN SILICON EPITAXIAL TRANSISTOR

FEATURES ● High Collector to Base Voltage. ● Excellent DC Current Gain Linearity. ● Complements to PNP type 2SB804.

BILIN

银河微电

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1005 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.

RENESAS

瑞萨

NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity

DGNJDZ

南晶电子

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Excellent DC Current Gain Linearity • High Breakdown Voltage • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensit

MCC

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Excellent DC Current Gain Linearity • High Breakdown Voltage • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensit

MCC

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Excellent DC Current Gain Linearity • High Breakdown Voltage • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensit

MCC

NPN Silicon Epitaxial Transistor

Features ● High collector to emitter voltage: VCEO > 100V.

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ​​​​​​​● World Standard Miniature Package : SOT-89 ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007)

NEC

瑞萨

High collector to emitter vlotage

Features High collector to emitter voltage: VCEO > 100V.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007) : VCEO > 100 V (2SD1006) ● Compl

RENESAS

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007) : VCEO > 100 V (2SD1006) ● Compl

RENESAS

瑞萨

High collector to emitter vlotage

Features High collector to emitter voltage: VCEO > 120V.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor Features ● High collector to emitter voltage: VCEO > 120V.

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ​​​​​​​● World Standard Miniature Package : SOT-89 ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007)

NEC

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007) : VCEO > 100 V (2SD1006) ● Compl

RENESAS

瑞萨

NPN Transistors

文件:1.18349 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.2361 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.18349 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.2361 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.18349 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.2361 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.18349 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.2361 Mbytes Page:3 Pages

KEXIN

科信电子

Small Signal Bipolar Transistors

RENESAS

瑞萨

NPN Transistors

文件:1.14851 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.19744 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.14851 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.19744 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.14851 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.19744 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.14851 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.19744 Mbytes Page:3 Pages

KEXIN

科信电子

晶体管

JSCJ

长晶科技

Small Signal Bipolar Transistors

RENESAS

瑞萨

NPN Plastic Encapsulated Elektronische Bauelemente Transistor

文件:78.16 Kbytes Page:1 Pages

SECOS

喜可士

NPN Transistors

文件:1.07627 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.17751 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.07627 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.17751 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.07627 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.17751 Mbytes Page:3 Pages

KEXIN

科信电子

封装/外壳:TO-243AA 包装:带盒(TB) 描述:TRANS NPN 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

NPN Transistors

文件:1.07627 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.17751 Mbytes Page:3 Pages

KEXIN

科信电子

封装/外壳:TO-243AA 包装:带盒(TB) 描述:TRANS NPN 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

文件:1.7232 Mbytes Page:6 Pages

RENESAS

瑞萨

2SD100产品属性

  • 类型

    描述

  • 型号

    2SD100

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR SC-6260V .7A 2W ECB SURFACE MOUNT

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
5120
原装现货,当天可交货,原型号开票
Renesas(瑞萨)
24+
标准封装
9486
支持大陆交货,美金交易。原装现货库存。
RENESAS
2016+
SOT-89
6000
只做原装,假一罚十,公司可开17%增值税发票!
RENESAS/瑞萨
25+
SOT89
32000
RENESAS/瑞萨全新特价2SD1000-T2即刻询购立享优惠#长期有货
NEC
24+
SOT89
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
RENESAS
SOT89
9850
一级代理 原装正品假一罚十价格优势长期供货
TOSHIBA
23+
SMD
120000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
NEC
25+
SOT89
9800
全新原装现货,假一赔十
SHIKUES(时科)
23+
SOT-89-3
5430
三极管/MOS管/晶体管 > 三极管(BJT)

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