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2SC606晶体管资料

  • 2SC606别名:2SC606三极管、2SC606晶体管、2SC606晶体三极管

  • 2SC606生产厂家:日本日电公司

  • 2SC606制作材料:Si-NPN

  • 2SC606性质:微型 (Min)_甚高频 (VHF)_前置放大 (V)

  • 2SC606封装形式:贴片封装

  • 2SC606极限工作电压

  • 2SC606最大电流允许值

  • 2SC606最大工作频率:530MHZ

  • 2SC606引脚数:3

  • 2SC606最大耗散功率

  • 2SC606放大倍数

  • 2SC606图片代号:G-22

  • 2SC606vtest:0

  • 2SC606htest:530000000

  • 2SC606atest:0

  • 2SC606wtest:0

  • 2SC606代换 2SC606用什么型号代替:BF198,BF225,BF310,BF314,BF367,BF505,BF596,3DG79C,

型号 功能描述 生产厂家 企业 LOGO 操作
2SC606

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR VHF TV Tuner MICRODISK The 2SC605 and 2SC606 are specifically designed for VHF Mixer and VHF RF amplifier applications. The 2SC606 feature high power gain, low noise and excellent forward AGC characteristics in MICRODISK package designed to realize easy and economical mo

ETCList of Unclassifed Manufacturers

未分类制造商

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications • High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) • Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 0.2 μs (typ.)

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope:DC/DC converters\nPolarity:NPN\nRoHS Compatible Product(s) (#):Available\nAssembly bases:日本 Collector Current IC 1.0 A \nCollector Current ICP 2.0 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1 W \nCollector-Base Voltage VCBO 180 V \nCollector-emitter voltage VCEO 120 V ;

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

SANYO

三洋

NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

ONSEMI

安森美半导体

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

ONSEMI

安森美半导体

2SC606产品属性

  • 类型

    描述

  • Polarity:

    NPN

  • Features:

    Low Satulation Voltage

  • VCEO(Max)(V):

    120

  • IC(Max)(A):

    1.0

  • hFE(Min):

    120

  • hFE(Max):

    300

  • VCE(sat)(Max)(V):

    0.14

  • Number of pins:

    3

  • Surface mount package:

    Y

  • Package name:

    TSM

  • Width×Length×Height(mm):

    2.9 x 2.8 x 0.7

更新时间:2026-8-2 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
2026+
SOT-23
65428
百分百原装现货 实单必成
NEC
24+
4140
TOSHIBA
26+
LGA12
86720
全新原装正品价格最实惠 假一赔百
TOSHIBA
22+
SOT23
20000
公司只有原装 品质保证
TOSHIBA(东芝)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
TOSHIBA
最新
NA
9200
公司原装现货假一罚十特价欢迎来电咨询
TOSHIBA/东芝
2450+
SOT252
8850
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA/东芝
25+
SOT-23
20300
TOSHIBA/东芝原装特价2SC6061即刻询购立享优惠#长期有货
TOSHIBA
1446+
SOT23
1190
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百

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