Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications • High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) • Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 0.2 μs (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

Application Scope：DC/DC converters\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 1.0 A \nCollector Current ICP 2.0 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1 W \nCollector-Base Voltage VCBO 180 V \nCollector-emitter voltage VCEO 120 V ;