NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR VHF TV Tuner MICRODISK The 2SC605 and 2SC606 are specifically designed for VHF Mixer and VHF RF amplifier applications. The 2SC606 feature high power gain, low noise and excellent forward AGC characteristics in MICRODISK package designed to realize easy and economical mo

NPN SILICON TRANSISTOR

丝印代码：C6052；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

Feature：Low saturation voltage / The linearity of hFE is good.\nApplication Scope：High current switching / High-speed switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available Collector Current IC 5 A \nCollector power dissipation PC 10 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO 20 V ;

FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE(sat). FEATURES • Super mini package for easy mounting • High collector current Ic = 650mA • Low collector to emitter saturation voltage VCE(sat)=0.5V ma

FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

文件：113.99 Kbytes Page：4 Pages

FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

文件：113.99 Kbytes Page：4 Pages

封装/外壳：SC-89，SOT-490 包装：散装 描述：TRANS NPN 50V 0.1A SSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN epitaxial planar type

封装/外壳：SC-89，SOT-490 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 0.1A SSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个