Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 100 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SA2154 • Lead (Pb) free

封装/外壳：SOT-723 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 0.15A VESM 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Amplifier Applications

General Purpose Amplifier Applications • High voltage and high current : VCEO = 50V, IC = 100mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154CT

General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV