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2SC601晶体管资料
2SC601别名:2SC601三极管、2SC601晶体管、2SC601晶体三极管
2SC601生产厂家:日本富士通公司_日本松下公司
2SC601制作材料:Si-NPN
2SC601性质:高速开关 (SS)
2SC601封装形式:直插封装
2SC601极限工作电压:40V
2SC601最大电流允许值:0.1A
2SC601最大工作频率:580MHZ
2SC601引脚数:3
2SC601最大耗散功率:0.3W
2SC601放大倍数:
2SC601图片代号:D-8
2SC601vtest:40
2SC601htest:580000000
- 2SC601atest:0.1
2SC601wtest:0.3
2SC601代换 2SC601用什么型号代替:BSS10,BSS11,BSS12,BSV59,BSV91,BSV92,BSX19,BSX20,BSX39,BSX87,BSX88,BSX92,BSX93,BSY63,2N2368,2N2368A,2N2369,2N2369A,3DG122C,
2SC601价格
参考价格:¥14.9765
型号:2SC6011 品牌:Sanken 备注:这里有2SC601多少钱,2025年最近7天走势,今日出价,今日竞价,2SC601批发/采购报价,2SC601行情走势销售排行榜,2SC601报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN Triple Diffused Type High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tf = 0.24μs (max) (IC = 0.3A) | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit | ALLEGRO | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A • Good Linearity of hFE • Complement to Type 2SA2151/A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) • Good Linearity of (IFE • Complement to Type 2SA2151 APPLICATIONS • Designed for audio and general purpose applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit | Sanken 三垦 | |||
Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit | Sanken 三垦 | |||
Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit | ALLEGRO | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A • Good Linearity of hFE • Complement to Type 2SA2151/A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope | ISC 无锡固电 | |||
Silicon NPN triple diffusion mesa type Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area | Panasonic 松下 | |||
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash. | SANYO 三洋 | |||
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash. | SANYO 三洋 | |||
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash. | SANYO 三洋 | |||
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash. | SANYO 三洋 | |||
PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications High-Current Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers. | SANYO 三洋 | |||
Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers | ONSEMI 安森美半导体 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA2169 APPLICATIONS • relay drivers,lamp drivers,motor drivers | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers | ISC 无锡固电 | |||
Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers | ONSEMI 安森美半导体 | |||
Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers | ONSEMI 安森美半导体 | |||
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor | SANYO 三洋 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 200V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Sanken 三垦 | |||
音频放大晶体管 (Audio Amplification Transistor) | ALLEGRO | |||
双极型晶体管 | Sanken 三垦 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Sanken 三垦 | |||
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications | ONSEMI 安森美半导体 |
2SC601产品属性
- 类型
描述
- 型号
2SC601
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
Silicon NPN Triple Diffused Type
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
SANYO |
14+ |
TO252 |
700 |
普通 |
|||
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
22+ |
TO-220-3 |
50000 |
原装正品假一罚十,代理渠道价格优 |
|||
ON/安森美 |
TO-251 |
22+ |
6000 |
十年配单,只做原装 |
|||
SANYO |
24+ |
SOT89 |
598000 |
原装现货假一赔十 |
|||
SANYO/三洋 |
23+ |
SOT-89 |
50000 |
全新原装正品现货,支持订货 |
|||
SANYO/三洋 |
2450+ |
SOT89 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
SANYO |
22+ |
SOT-89 |
20000 |
公司只有原装 品质保证 |
|||
SANYO/三洋 |
23+ |
SOT-89 |
426000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
2SC601芯片相关品牌
2SC601规格书下载地址
2SC601参数引脚图相关
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2SC601数据表相关新闻
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2018-12-19
DdatasheetPDF页码索引
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