2SC601晶体管资料

  • 2SC601别名:2SC601三极管、2SC601晶体管、2SC601晶体三极管

  • 2SC601生产厂家:日本富士通公司_日本松下公司

  • 2SC601制作材料:Si-NPN

  • 2SC601性质:高速开关 (SS)

  • 2SC601封装形式:直插封装

  • 2SC601极限工作电压:40V

  • 2SC601最大电流允许值:0.1A

  • 2SC601最大工作频率:580MHZ

  • 2SC601引脚数:3

  • 2SC601最大耗散功率:0.3W

  • 2SC601放大倍数

  • 2SC601图片代号:D-8

  • 2SC601vtest:40

  • 2SC601htest:580000000

  • 2SC601atest:0.1

  • 2SC601wtest:0.3

  • 2SC601代换 2SC601用什么型号代替:BSS10,BSS11,BSS12,BSV59,BSV91,BSV92,BSX19,BSX20,BSX39,BSX87,BSX88,BSX92,BSX93,BSY63,2N2368,2N2368A,2N2369,2N2369A,3DG122C,

2SC601价格

参考价格:¥14.9765

型号:2SC6011 品牌:Sanken 备注:这里有2SC601多少钱,2025年最近7天走势,今日出价,今日竞价,2SC601批发/采购报价,2SC601行情走势销售排行榜,2SC601报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Triple Diffused Type

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tf = 0.24μs (max) (IC = 0.3A)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

ALLEGRO

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 ​​​​​​​ = 200V(Min)-2SC6011A • Good Linearity of hFE • Complement to Type 2SA2151/A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) • Good Linearity of (IFE • Complement to Type 2SA2151 APPLICATIONS • Designed for audio and general purpose applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

Sanken

三垦

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

Sanken

三垦

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

ALLEGRO

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 ​​​​​​​ = 200V(Min)-2SC6011A • Good Linearity of hFE • Complement to Type 2SA2151/A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope

ISC

无锡固电

Silicon NPN triple diffusion mesa type

Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area

Panasonic

松下

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash.

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash.

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash.

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash.

SANYO

三洋

PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.

SANYO

三洋

Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA2169 APPLICATIONS • relay drivers,lamp drivers,motor drivers

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers

ISC

无锡固电

Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 200V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Sanken

三垦

音频放大晶体管 (Audio Amplification Transistor)

ALLEGRO

双极型晶体管

Sanken

三垦

封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Sanken

三垦

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

ONSEMI

安森美半导体

2SC601产品属性

  • 类型

    描述

  • 型号

    2SC601

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    Silicon NPN Triple Diffused Type

更新时间:2025-12-25 10:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
SANYO
14+
TO252
700
普通
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
ON
22+
TO-220-3
50000
原装正品假一罚十,代理渠道价格优
ON/安森美
TO-251
22+
6000
十年配单,只做原装
SANYO
24+
SOT89
598000
原装现货假一赔十
SANYO/三洋
23+
SOT-89
50000
全新原装正品现货,支持订货
SANYO/三洋
2450+
SOT89
6540
只做原装正品现货或订货!终端客户免费申请样品!
SANYO
22+
SOT-89
20000
公司只有原装 品质保证
SANYO/三洋
23+
SOT-89
426000
原厂授权代理,海外优势订货渠道。可提供大量库存,详

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