NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE width. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drive

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE width. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, f

For power amplification For TV VM circuit

Silicon NPN epitaxial planar type For power amplification For TV VM circuit ■ Features • Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package which can be installed to the heat sink with one screw.

Silicon NPN Power Transistor

DESCRIPTION • Good Linearity of hFE • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) • Complement to Type 2SA2140 APPLICATIONS • Power amplification • For TV VM circuit

isc Silicon NPN Power Transistor

DESCRIPTION • Good Linearity of hFE • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) • Complement to Type 2SA2140 APPLICATIONS • Power amplification • For TV VM circuit

Bipolar Transistor

Features • Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • Large Current Capacity • High Speed Switching Typical Applications • Voltage Regulators • Relay Drivers • Lamp Drivers • Electrical Equipment

Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single PCP

Features • Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • Large Current Capacity • High Speed Switching Typical Applications • Voltage Regulators • Relay Drivers • Lamp Drivers • Electrical Equipment

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.

双极晶体管，50V，2A，低饱和压，NPN 单 PCP

2SC5994 is Bipolar Transistor, 50V, 2A, Low VCE(sat), NPN Single PCP for High-Current Switching Applications. • Adoption of MBIT Process\n• Large Current Capacity\n• Low Collector to Emitter Saturation Voltage\n• High Speed Switching;

Bipolar Transistor

Features • Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • Large Current Capacity • High Speed Switching Typical Applications • Voltage Regulators • Relay Drivers • Lamp Drivers • Electrical Equipment

Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single PCP

Features • Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • Large Current Capacity • High Speed Switching Typical Applications • Voltage Regulators • Relay Drivers • Lamp Drivers • Electrical Equipment

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA 2SC5996 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application FEATURE ◾ Small packege for mounting ◾ High Emitter to Base voltage VEBO=50V ◾ High Reverse hFE ◾ Low ON RESISTANCE. RON=1Ω APPLICATION For muting, swi

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA 2SC5996A is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application FEATURE ◾ Small packege for mounting ◾ High Emitter to Base voltage VEBO=40V ◾ High Reverse hFE ◾ Low ON RESISTANCE. RON=1Ω APPLICATION For muting, sw

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA 2SC5996 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application FEATURE ◾ Small packege for mounting ◾ High Emitter to Base voltage VEBO=50V ◾ High Reverse hFE ◾ Low ON RESISTANCE. RON=1Ω APPLICATION For muting, swi

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA 2SC5996B is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application FEATURE ◾ Small packege for mounting ◾ High Emitter to Base voltage VEBO=40V ◾ High Reverse hFE ◾ Low ON RESISTANCE. RON =0.75Ω APPLICATION For muting

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA 2SC5996 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application FEATURE ◾ Small packege for mounting ◾ High Emitter to Base voltage VEBO=50V ◾ High Reverse hFE ◾ Low ON RESISTANCE. RON=1Ω APPLICATION For muting, swi

NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Surface mount type. Applications • Relay drivers, lamp drivers, motor drivers, inverters.

Low-Saturation Voltage Transistors

Power Device - Power Transistors - Television/Display

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 180V 1.5A TO220D-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 2A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Epitaxial High Frequency Medium Power Amplifier

文件：104.95 Kbytes Page：11 Pages

Silicon NPN Epitaxial High Frequency Medium Power Amplifier

文件：104.95 Kbytes Page：11 Pages