SILICON TRANSISTOR

CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1700V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • Built in damper diode.

High Switching Speed

DESCRIPTION • High Breakdown Voltage- : VCBO= 1700V (Min) • High Switching Speed • High Reliability APPLICATIONS • Color TV horizontal deflection output applications

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV * Features • High breakdown voltage: VCBO ≥1 700 V • Wide safe operation area • Built-in dumper diode

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage • Built-in damper diode type • High Switching Speed • Wide Area of Safe Operation • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for high voltage color display hori

Silicon NPN triple diffusion mesa type

For Horizontal deflection output for TV, CRT monitor ■ Features • High breakdown voltage (VCBO ≥ 1 700 V) • High-speed switching (tf

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT monitor ■ Features • High breakdown voltage: VCBO ≥ 1 700 V • High-speed switching: tf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN triple diffusion mesa type

For horizontal deflection output ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf

Power Device - Power Transistors - Television/Display

Silicon NPN triple diffusion mesa type

Silicon NPN triple diffusion mesa type

Silicon NPN Epitaxial Type High-Speed Switching Applications

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