丝印代码：WP；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

Feature：Low saturation voltage\nApplication Scope：Mobile equipment power supplies\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 4 A \nCollector Current ICP 7 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1.25 W \nCollector-emitter voltage VCEO 30 V ;

Silicon NPN Epitaxial Type High-Speed Switching Applications

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