SILICON TRANSISTOR

CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1700V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • Built in damper diode.

High Switching Speed

DESCRIPTION • High Breakdown Voltage- : VCBO= 1700V (Min) • High Switching Speed • High Reliability APPLICATIONS • Color TV horizontal deflection output applications

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV * Features • High breakdown voltage: VCBO ≥1 700 V • Wide safe operation area • Built-in dumper diode

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage • Built-in damper diode type • High Switching Speed • Wide Area of Safe Operation • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for high voltage color display hori

Silicon NPN triple diffusion mesa type

For Horizontal deflection output for TV, CRT monitor ■ Features • High breakdown voltage (VCBO ≥ 1 700 V) • High-speed switching (tf

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT monitor ■ Features • High breakdown voltage: VCBO ≥ 1 700 V • High-speed switching: tf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN triple diffusion mesa type

For horizontal deflection output ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf

Silicon NPN triple diffusion mesa type

Silicon NPN triple diffusion mesa type Horizontal deflection output for TV ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode

Silicon NPN triple diffusion mesa type

Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT Monitor ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

High-Current Switching Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Surface mount type. Applications • Relay drivers, lamp drivers, motor drivers, inverters.

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Medium power transistor (30V, 2A)

Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2113 Applications Low frequency amplifier

Silicon NPN triple diffusion planar type

For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT monitor ■ Features • High breakdown voltage: VCBO ≥ 1 700 V • High speed switching: tf 200 ns • Wide safe operation area

2SC5932

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

2SC5933

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

Silicon NPN epitaxial planar type

For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb • SSS-Mini type package, allowing downsizing of the equipment

HIGH FREQUENCY AMPLIFIER APPLICATIONS. VIDEO AMPLIFIER APPLICATIONS, HIGH SPEED SHITCHING APPLICATIONS.

FEATURES: • High Transition Frequency : fp=200MHz (Typ.) • Low Output Capacitance : Cob=3.5pF (Typ.) • Low Saturation Voltage : VCE(sat)-0.3V (Max.) at Ic100mA, Ig-10mA • Complementary to 25A594.

2SC5946

Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

NPN Triple Diffused Planar Silicon Transistor - Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage. • High reliability. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

Silicon NPN Triple Diffused Type Power Amplifier Applications

Power Amplifier Applications • Complementary to 2SA2120 • Recommended for audio frequency amplifier output stage.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power Amplifier Applications

Power Amplifier Applications • Complementary to 2SA2121 • Recommended for audio frequency amplifier output stage.

High Current Capability

DESCRIPTION • High Current Capability • High Power Dissipation • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) • Complement to Type 2SA2121 APPLICATIONS • Power amplifier applications • Recommended for audio frequency amplifier output stage.

Transistor Silicon NPN Triple Diffused Type

Power Amplifier Applications • Complementary to 2SA2121 • Recommended for audio frequency amplifier output stage.

Power Amplifier Applications

Power Amplifier Applications • Complementary to 2SA2121 • Recommended for audio frequency amplifier output stage.

Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to th

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to th

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to th

Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage and high reliability. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage and high reliability. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage and high reliability. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo

DC / DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo

NPN SILICON TRANSISTOR

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High-speed. • High breakdown voltage (VCBO=1700V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High-speed. • High breakdown voltage (VCBO=1700V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High-speed. • High breakdown voltage (VCBO=1700V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application FEATURE ◾ Small packege for mounting ◾ High Emitter to Base voltage VEBO=50V ◾ High Reverse hFE ◾ Low ON RESISTANCE. RON=1Ω APPLICATION For muting, switching

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application FEATURE ◾ Small packege for mounting ◾ High Emitter to Base voltage VEBO=40V ◾ High Reverse hFE ◾ Low ON RESISTANCE. RON=1Ω APPLICATION For muting, switchin

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA 2SC5974B is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application FEATURE ◾ Small packege for mounting ◾ High Emitter to Base voltage VEBO=40V ◾ High Reverse hFE ◾ Low ON RESISTANCE. RON =0.75Ω APPLICATION For muting, swit

Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications • High DC current gain: hFE = 250 to 400 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 25 ns (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE width. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp d

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE width. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp d

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE width. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drive

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE width. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, f