2SC578晶体管资料

  • 2SC578别名:2SC578三极管、2SC578晶体管、2SC578晶体三极管

  • 2SC578生产厂家:日本日电公司

  • 2SC578制作材料:Si-NPN

  • 2SC578性质:开关管 (S)

  • 2SC578封装形式:直插封装

  • 2SC578极限工作电压:60V

  • 2SC578最大电流允许值:0.5A

  • 2SC578最大工作频率:<1MHZ或未知

  • 2SC578引脚数:3

  • 2SC578最大耗散功率:0.6W

  • 2SC578放大倍数

  • 2SC578图片代号:C-40

  • 2SC578vtest:60

  • 2SC578htest:999900

  • 2SC578atest:0.5

  • 2SC578wtest:0.6

  • 2SC578代换 2SC578用什么型号代替:BSS13,BSS14,BSS27,BSV77,BSV95,BSX30,2N5189,2SC1385,2SC1386,3DK4C,

2SC578价格

参考价格:¥2.7327

型号:2SC57880PA 品牌:Panasonic 备注:这里有2SC578多少钱,2025年最近7天走势,今日出价,今日竞价,2SC578批发/采购报价,2SC578行情走势销售排行榜,2SC578报价。
型号 功能描述 生产厂家 企业 LOGO 操作

High-Frequency Low-Noise Amplifier and OSC Applications

High-Frequency Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.5dB typ (f=2GHz). • High cutoff frequency : fT=6.5GHz typ (VCE=1V). : fT=11.2GHz typ (VCE=3V). • Low operating voltage. • Ultraminiature and thin flat leadless packag

SANYO

三洋

UHF to S Band Low-Noise Amplifier and OSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=1.3dB typ (f=2GHz). • High cutoff frequency : fT=8.5GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=10.5dB typ (f=2GHz). • Ultraminiature and thin flat lead

SANYO

三洋

2SC5783

High-Frequency Low-Noise Amplifier and OSC Applications Features • Low noise : NF=1.5dB typ (f=2GHz). • High cutoff frequency : fT=6.0GHz typ (VCE=1V). : fT=10.5GHz typ (VCE=3V). • Low operating voltage. • Ultraminiature and thin leadless package. (1.4mm✕

SANYO

三洋

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 25 ns (typ.)

TOSHIBA

东芝

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) FEATURES ● High-Speed Switching Applications ● DC-DC Converter Applications ● Strobe Applications

JIANGSU

长电科技

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

DGNJDZ

南晶电子

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase di

RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase di

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., ½S21e½2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Z

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS

NEC

瑞萨

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS

NEC

瑞萨

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., ½S21e½2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Z

RENESAS

瑞萨

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters ■ Features • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector to emitter saturation voltage VCE(sat) • Superior

Panasonic

松下

SMALL-SIGNAL TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION

DESCRIPTION 2SC5789 is a ultra super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. Since it is a super-thin flat lead type package,a high-density mounting are possible. FEATURE ● Super-thin flat lead type package. t=0.45mm ● Hi

ISAHAYA

谏早电子

Ultrahigh-Frequency Transistors

ONSEMI

安森美半导体

Ultrahigh-Frequency Transistors

ONSEMI

安森美半导体

Power transistor for high-speed switching applications

TOSHIBA

东芝

Silicon NPN Epitaxial Type High-Speed Switching Applications

文件:138.39 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type High-Speed Switching Applications

文件:138.39 Kbytes Page:5 Pages

TOSHIBA

东芝

NPN Transistors

文件:1.47257 Mbytes Page:3 Pages

KEXIN

科信电子

封装/外壳:3-SIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 60V 3A MT-4 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PanasonicElectronicComponents

封装/外壳:3-SIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 60V 3A MT-4 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PanasonicElectronicComponents

2SC578产品属性

  • 类型

    描述

  • 型号

    2SC578

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR60V .5A .6W

更新时间:2025-10-4 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
2511
SOT-23
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
TOSHIBA/东芝
24+
SOT23
9600
原装现货,优势供应,支持实单!
TOSHIBA
24+
SOT-23
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
TOSHIBA/东芝
23+
SOT-23
16238
原厂授权代理,海外优势订货渠道。可提供大量库存,详
TOSHIBA/东芝
2447
SOT23
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
TOSHIBA/东芝
23+
SOT23
50000
全新原装正品现货,支持订货
TOSHIBA
24+
SOT-23
7950
新进库存/原装
TOSHIBA/东芝
24+
SOT23
54000
郑重承诺只做原装进口现货
TOSHIBA/东芝
20+
SOT-23
120000
原装正品 可含税交易
NK/南科功率
2025+
SOT-23
986966
国产

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