Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product fT = 9 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High gain bandwidth product fT = 9 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz

Silicon NPN Epitaxial VHF/UHF wide band amplifier

• High gain bandwidth product\n  fT = 9 GHz typ.\n• High power gain and low noise figure ;\n  PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz ;

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High gain bandwidth product fT = 9 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product fT = 10.8 GHz typ. • High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz

Silicon NPN Epitaxial UHF / VHF wide band amplifier

• High gain bandwidth product\n   fT= 10.8 GHz typ.\n• High power gain and low noise figure ;\n   PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz ;

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product fT= 10.8 GHz typ. • High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product fT= 10.8 GHz typ. • High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz

140V / 10A, AF70W Output Applications

140V / 10A, AF70W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor

Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):3.0V(Max) @IC= 10.8A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters ■ Features • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior fo

Transistors>Amplifiers/Bipolar

High Gain Bandwidth Product

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Silicon NPN RF Transistor

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