Silicon NPN epitaxial planer type(For high-frequency oscillation / switching)

Silicon NPN epitaxial planer type For high-frequency oscillation / switching ■ Features • High transition frequency fT • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO)

Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

NPN TRANSISTOR

FEATURES: * High current. * Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA

Low frequency transistor (12V, 0.5A)

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Features 1) High current. 2) Low VCE(sat). VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA Applications For switching For muting

LOW FREQUENCY TRANSISTOR

FEATURES ● High current. ● Low VCE(sat). Applications ● For switching. ● For muting.

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High current. ● Low VCE(sat). VCE(sat)≤250mV at IC = 200mA / IB = 10mA

Low Frequency Transistor

Features Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA

NPN Silicon General Purpose Transistor

FEATURES • High Current. • Low VCE(sat). VCE(sat)≦0.25V (@IC=200mA / IB=10mA) • Complement of 2SC4738. Application • General Purpose Amplification.

NPN Silicon General Purpose Transistor

FEATURES Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA High Current

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf (2) = 0.1 µs (Typ.)

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)

HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO= 1700 V
Low Saturation Voltage : VCE (sat)= 3 V (Max.)
High Speed : tf (2) = 0.1µs (Typ.)

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Base Voltage- : VCBO= 1500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.

NPN TRIPLE DIFFUSED MESA TYPE ((HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf (2) = 0.1 µs (Typ.)

Silicon NPN triple diffusion mesa type Power Transistors

isc Silicon NPN Power Transistor

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NPN Silicon General Purpose Transistor

文件：204.74 Kbytes Page：2 Pages

晶体管

Low VCE(sat) Transistor

NPN Silicon General Purpose Transistor

文件：204.74 Kbytes Page：2 Pages

NPN Silicon General Purpose Transistor

文件：204.74 Kbytes Page：2 Pages

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 12V 0.5A EMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc Silicon NPN Power Transistor

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