NPN Silicon General Purpose Transistor

FEATURES Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA High Current

NPN Silicon General Purpose Transistor

FEATURES\nLow VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA\nHigh Current Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA\nHigh Current\n ;

Low Frequency Transistor

Features Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA

NPN TRANSISTOR

FEATURES: * High current. * Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA

丝印代码：BX；Low frequency transistor (12V, 0.5A)

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Features 1) High current. 2) Low VCE(sat). VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA Applications For switching For muting

NPN Silicon General Purpose Transistor

FEATURES • High Current. • Low VCE(sat). VCE(sat)≦0.25V (@IC=200mA / IB=10mA) • Complement of 2SC4738. Application • General Purpose Amplification.