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2SC538晶体管资料
2SC538别名：2SC538三极管、2SC538晶体管、2SC538晶体三极管
2SC538生产厂家：日本松下公司
2SC538制作材料：Si-NPN
2SC538性质：通用型 （Uni）
2SC538封装形式：直插封装
2SC538极限工作电压：25V
2SC538最大电流允许值：0.05A
2SC538最大工作频率：150MHZ
2SC538引脚数：3
2SC538最大耗散功率：0.3W
2SC538放大倍数：
2SC538图片代号：D-8
2SC538vtest：25
2SC538htest：150000000
- 2SC538atest：0.05
2SC538wtest：0.3
2SC538代换 2SC538用什么型号代替：BC107,BC168,BC171,BC183,BC207,BC237,BC238,BC548,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC538 | Low Level and General Purpose Amplifiers 文件：84.74 Kbytes Page：1 Pages | MICRO-ELECTRONICS |   | |
For horizontal deflection output Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO) | Panasonic 松下 | | ||
For horizontal deflection output Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO) | Panasonic 松下 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High Voltage ·High speed switching | SAVANTIC | | ||
Switching Power Transistor(6A NPN) Switching Power Transistor 6A NPN | SHINDENGEN | | ||
Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus) = 550V(Min) • High Switching Speed • Low Collector Saturation Voltage APPLICATIONS • Designed for switching regulator and general purpose applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High Voltage ·High speed switching | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High Voltage ·High speed switching | ISC 无锡固电 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) DESCRIPTION 2SC5383 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ● Excellent linearity of DC forw | ISAHAYA 谏早电子 | | ||
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini For High Frequency Amplify, Medium Frequency Amplify Application | ISAHAYA 谏早电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications | ISC 无锡固电 | | ||
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS) HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO= 1500 V Low Saturation Voltage : VCE (sat)= 3 V (Max.) High Speed : tf= 0.15 µs (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin. | TOSHIBA 东芝 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications | JMNIC 锦美电子 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage-: VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switching applications. | ISC 无锡固电 | | ||
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS) HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf = 0.15 µs (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin. | TOSHIBA 东芝 | | ||
High-Voltage Switching Applications High-Voltage Switching Applications · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. | SANYO 三洋 | | ||
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 700V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.5V(Max) @IC=5A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers | ISC 无锡固电 | | ||
For horizontal deflection output | Panasonic 松下 | | ||
Silicon NPN Power Transistors 文件：213.96 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：153.07 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：153.07 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 文件：184.49 Kbytes Page：4 Pages | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 文件：184.49 Kbytes Page：4 Pages | ISAHAYA 谏早电子 | | ||
晶体管（PNP、NPN） | ETC 知名厂家 | ETC | | |
晶体管（PNP、NPN） | ETC 知名厂家 | ETC | | |
For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini 文件：252.39 Kbytes Page：6 Pages | ISAHAYA 谏早电子 | | ||
For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini 文件：252.39 Kbytes Page：6 Pages | ISAHAYA 谏早电子 | | ||
Silicon NPN Power Transistor 文件：120.87 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：291.68 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：203.33 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：203.33 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistor 文件：127.17 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
High-Voltage Switching Applications NPN Triple Diffused Planar Silicon Transistor 文件：765.96 Kbytes Page：3 Pages | SUNSPIRIT | | ||
Low Level and General Purpose Amplifiers 文件：84.74 Kbytes Page：1 Pages | MICRO-ELECTRONICS | |
2SC538产品属性
- 类型
描述
- 型号
2SC538
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
24+ |
NA/ |
800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ISAHAYA |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
ISAHAYA |
25+ |
SOT523 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ISAHAYA |
25+ |
SOT423 |
32000 |
ISAHAYA全新特价2SC5383-T111-1F即刻询购立享优惠#长期有货 |
|||
FUJI |
09+ |
TO-3P |
70 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA/东芝 |
24+ |
TO-3P |
8540 |
只做原装正品现货或订货假一赔十! |
|||
SOT-523 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
TO-3P |
24+ |
TOSHIBA |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ISAHAY |
25+ |
SC75ASILICONNPNEPITA |
880000 |
明嘉莱只做原装正品现货 |
|||
MITUSBS |
2016+ |
SOT-523 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
2SC538芯片相关品牌
2SC538规格书下载地址
2SC538参数引脚图相关
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2SC538数据表相关新闻
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2018-12-19
DdatasheetPDF页码索引
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