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2SC534晶体管资料

  • 2SC534别名:2SC534三极管、2SC534晶体管、2SC534晶体三极管

  • 2SC534生产厂家:日本日立公司

  • 2SC534制作材料:Si-NPN

  • 2SC534性质:调频 (FM)_前置放大 (V)_混频 (M)

  • 2SC534封装形式:直插封装

  • 2SC534极限工作电压:30V

  • 2SC534最大电流允许值:0.1A

  • 2SC534最大工作频率:230MHZ

  • 2SC534引脚数:3

  • 2SC534最大耗散功率:0.1W

  • 2SC534放大倍数

  • 2SC534图片代号:A-70

  • 2SC534vtest:30

  • 2SC534htest:230000000

  • 2SC534atest:0.1

  • 2SC534wtest:0.1

  • 2SC534代换 2SC534用什么型号代替:BF240,BF254,BF255,BF454,BF494,BF495,BF595,3DG121C,

2SC534价格

参考价格:¥1.1060

型号:2SC5347AF-TD-E 品牌:ON 备注:这里有2SC534多少钱,2026年最近7天走势,今日出价,今日竞价,2SC534批发/采购报价,2SC534行情走势销售排行榜,2SC534报价。
型号 功能描述 生产厂家 企业 LOGO 操作

NPN Silicon Transistor (Medium power amplifier)

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979

AUK

Medium power amplifier

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979

KODENSHI

可天士

Medium power amplifier

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979M

KODENSHI

可天士

NPN Silicon Transistor (Medium power amplifier)

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979M

AUK

Epitaxial planar NPN silicon transistor

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation : VCE(sat) = 0.25 Max. • Complementary pair with 2SA1979N

AUK

MEDIUM POWER AMPLIFIER

MEDIUM POWER AMPLIFIER Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979S

KODENSHI

可天士

NPN Silicon Transistor (Medium power amplifier)

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979S

AUK

NPN Silicon Transistor (Medium power amplifier)

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979SF

AUK

NPN Silicon Transistor

Features ● Large collector current: IC=500mA. ● Low collector saturation voltage enabling low-voltage operation.

KEXIN

科信电子

Medium power amplifier

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979SF

KODENSHI

可天士

NPN Silicon Transistor (Medium power amplifier)

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979U

AUK

Medium power amplifier

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979U

KODENSHI

可天士

Medium power amplifier

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979UF

KODENSHI

可天士

NPN Silicon Transistor (Medium power amplifier)

Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979UF

AUK

General small signal amplifier

Description • General small signal amplifier Features • Low collector saturation voltage: VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980

KODENSHI

可天士

丝印代码:5343;Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity :hFE(2)=100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). ● Low noise:NF=1Db(Typ).at f=1KHz. ● Complementary pair with 2SA1980S. APPLICATIONS ● General small signal amplifier.

BILIN

银河微电

NPN Silicon Transistor (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980

AUK

TRANSISTOR (NPN)

FEATURES Excellent hFE Linearity Low Noise.

HTSEMI

金誉半导体

NPN Transistor Plastic-Encapsulate Transistors

FEATURE  Excellent hFE Linearity  Low Noise

SECOS

喜可士

SOT-23 TRANSISTOR

GENERAL PURPOSE TRANSISTOR Collector Dissipation:Pc=225mW Collector-Emitter Voltage VCEO: =40V NPN Epitaxial Silicon Transistor

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low VCE(sat),low output capacitance, complementary pair with 2SA1980. Applications General small signal amplifier applications.

FOSHAN

蓝箭电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearity Low Noise

DGNJDZ

南晶电子

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Excellent hFE Linearity ● Low Noise

JIANGSU

长电科技

丝印代码:5343;Silicon Epitaxial Planar Transistor

FEATURES ● Low collector saturation voltage: VCE(sat)=0.25V(Max). ● Low output capacitance:Cob=2pF(Typ). ● Complementary pair with 2SA1980. APPLICATIONS ● General small signal amplifier.

LUGUANG

鲁光电子

TRANSISTOR (NPN)

FEATURES ● Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). ● Low Noise: NF=10dB(Typ). At f=1KHZ.

KOOCHIN

灏展电子

丝印代码:C5343;TO-92 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearity hFE(2)=100(Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ.

DGNJDZ

南晶电子

TO-92 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearity hFE(2)=100(Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ.

DGNJDZ

南晶电子

General small signal amplifier

Description • General small signal amplifier Features • Low collector saturation voltage :V CE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980E

KODENSHI

可天士

NPN Silicon Transistor (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980E

AUK

General small signal amplifier

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980EF

KODENSHI

可天士

NPN Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Low Collector Saturation Voltage: VCE(sat)=0.25V(Max.) • Low Output Capacitance: Cob=2.0pF(Typ.) • Complementary Pair With 2SA1980 • Marking : C5343 • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level

MCC

NPN Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Low Collector Saturation Voltage: VCE(sat)=0.25V(Max.) • Low Output Capacitance: Cob=2.0pF(Typ.) • Complementary Pair With 2SA1980 • Marking : C5343 • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level

MCC

General small signal amplifier

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M

KODENSHI

可天士

NPN Silicon Transistor (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M

AUK

NPN Silicon Transistor

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980N

AUK

NPN Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Low Collector Saturation Voltage: VCE(sat)=0.25V(Max.) • Low Output Capacitance: Cob=2.0pF(Typ.) • Complementary Pair With 2SA1980 • Marking : C5343 • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level

MCC

GENERAL SMALL SIGNAL AMPLIFIER

GENERAL SMALL SIGNAL AMPLIFIER Features • Low collector saturation voltage : VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980S

KODENSHI

可天士

General small signal amplifier (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980S

AUK

NPN Silicon Transistor (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980SF

AUK

NPN Silicon Transistor

Features Low collector saturation voltage: VCE=0.25V(Max.) Low output capacitance:Cob=2pF(Typ.)

KEXIN

科信电子

General small signal amplifier

Description • General small signal amplifier Features • Low collector saturation voltage : VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980SF

KODENSHI

可天士

丝印代码:C5343;TO-92 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearity hFE(2)=100(Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ.

DGNJDZ

南晶电子

General Small Signal Amplifier

■ Features ● Low collector saturation voltage : VCE=0.25V(Max.) ● Low output capacitance : Cob=2pF(Typ.) ● Complementary to 2SA1980UF

KEXIN

科信电子

NPN Silicon Transistor (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980UF

AUK

NPN Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Low Collector Saturation Voltage: VCE(sat)=0.25V(Max.) • Low Output Capacitance: Cob=2.0pF(Typ.) • Complementary Pair With 2SA1980 • Marking : C5343 • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level

MCC

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

WEITRON

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High hFE, complementary pair with 2SA1981. Applications Audio power amplifier application.

FOSHAN

蓝箭电子

丝印代码:C5344;NPN Silicon Transistor (Audio power amplifier application)

Description •Audio power amplifier application Features •High hFE: hFE=100~320 •Complementary pair with 2SA1981

AUK

丝印代码:FA*;0.8A , 35V NPN Plastic-Encapsulate Transistor

FEATURES • Audio power amplifier application • High hFE=100~320 • Complementary to 2SA1981

SECOS

喜可士

Audio power amplifier application

Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SA1981

KODENSHI

可天士

丝印代码:FA*;Silicon Epitaxial Planar Transistor

FEATURES ● High hFE ● Complementary pair with 2SA1981 APPLICATIONS ● General small signal amplifier

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● Audio power amplifier application ● High hFE : hFE=100~320 ● Complementary to 2SA1981

KOOCHIN

灏展电子

丝印代码:C5344;TO-92 Plastic-Encapsulate Transistors

FEATURES Audio Power Amplifier Application High hFE : hFE=100~320 Complementary to 2SA1981

DGNJDZ

南晶电子

丝印代码:FAO;Excellent Hfe licearity

FEATURES Excellent hFE linearity Power dissipation APPLICATIONS General small signal amplifier

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Audio power amplifier application • High hFE : hFE=100~320 • Complementary to 2SA1981

JIANGSU

长电科技

NPN Silicon Transistor

Description • Audio power amplifier application Features • High DC current gain : hFE=100~320 • Complementary pair with 2SA1981N

AUK

NPN Silicon Transistor (Audio power amplifier application)

Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SA1981S

AUK

Audio power amplifier application

Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SA1981S

KODENSHI

可天士

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High hFE, complementary pair with 2SA1981S. Applications Audio power amplifier application.

FOSHAN

蓝箭电子

NPN Silicon Transistor (Audio power amplifier application)

Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SA1981SF

AUK

2SC534产品属性

  • 类型

    描述

  • Classifacation:

    Single type

  • VCEO [V]:

    32

  • IC[mA]:

    500

  • PC[mW]:

    625

  • hFE_Min:

    70

  • hFE_Max:

    240

  • hFE@ VCE [V]:

    1

  • hFE@ IC[mA]:

    100

  • VCE(sat) [V]_Max:

    0.25

  • VCE(sat) [V]@ IC[mA]:

    100

  • VCE(sat) [V]@ IB[mA]:

    10

  • fT[MHz]_Typ:

    300

  • fT[MHz]@ VCE [V]:

    6

  • fT[MHz]@ IC[mA]:

    20

更新时间:2026-5-14 9:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
SOT89
2929
正规渠道,只有原装!
三年内
1983
只做原装正品
ON/安森美
25+
SOT89
90000
全新原装现货
ON/安森美
23+
SOT89
50000
全新原装正品现货,支持订货
ON/安森美
25+
SOT89
10000
全新原装现货库存
ON/安森美
24+
SOT89
9600
原装现货,优势供应,支持实单!
ON/安森美
26+
SOT89
60000
只有原装,可配单
ON/安森美
22+
SOT89
8000
原装正品支持实单
onsemi
25+
PCP
20948
样件支持,可原厂排单订货!
ON/安森美
2023+
SOT89
8800
正品渠道现货 终端可提供BOM表配单。

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