NPNSiliconTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollectorSaturationVoltage:VCE(sat)=0.25V(Max.) •LowOutputCapacitance:Cob=2.0pF(Typ.) •ComplementaryPairWith2SA1980 •Marking:C5343 •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel

NPNSiliconTransistors

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TRANSISTOR(NPN)

FEATURES ExcellenthFELinearity LowNoise.

NPNSiliconTransistor(Generalsmallsignalamplifier)

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=0.25V(Max.) •Lowoutputcapacitance:Cob=2pF(Typ.) •Complementarypairwith2SA1980

SiliconEpitaxialPlanarTransistor

FEATURES ●ExcellenthFElinearity :hFE(2)=100(Typ)atVCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). ●Lownoise:NF=1Db(Typ).atf=1KHz. ●Complementarypairwith2SA1980S. APPLICATIONS ●Generalsmallsignalamplifier.

Generalsmallsignalamplifier

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=0.25V(Max.) •Lowoutputcapacitance:Cob=2pF(Typ.) •Complementarypairwith2SA1980

NPNTransistorPlastic-EncapsulateTransistors

FEATURE
ExcellenthFELinearity
LowNoise

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个