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位置：首页 > IC中文资料第5780页 > 2SC5337

2SC5337晶体管资料

  • 2SC5337别名：2SC5337三极管、2SC5337晶体管、2SC5337晶体三极管

  • 2SC5337生产厂家：

  • 2SC5337制作材料：Si-NPN

  • 2SC5337性质：表面帖装型 （SMD）_超高频/特高频 （UHF）_CATV

  • 2SC5337封装形式：直插封装

  • 2SC5337极限工作电压：30V

  • 2SC5337最大电流允许值：0.25A

  • 2SC5337最大工作频率：<1MHZ或未知

  • 2SC5337引脚数：3

  • 2SC5337最大耗散功率：

  • 2SC5337放大倍数：

  • 2SC5337图片代号：H-100

  • 2SC5337vtest：30

  • 2SC5337htest：999900

  • 2SC5337atest：0.25

  • 2SC5337wtest：0

  • 2SC5337代换 2SC5337用什么型号代替：

型号 功能描述 生产厂家 企业 LOGO 操作
2SC5337

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such. FEATURES • Low distortion IM2 = 59 dB TYP. @VCE = 10 V,

NEC

瑞萨

2SC5337

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536

CEL

2SC5337

NPN Silicon RF Transistor for High-Frequency

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45

RENESAS

瑞萨

2SC5337-AZ

NPN Silicon RF Transistor for High-Frequency

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45

RENESAS

瑞萨

2SC5337-AZ

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536

CEL

2SC5337-T1

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536

CEL

2SC5337-T1

NPN Silicon RF Transistor for High-Frequency

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45

RENESAS

瑞萨

2SC5337-T1-AZ

NPN Silicon RF Transistor for High-Frequency

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45

RENESAS

瑞萨

2SC5337-T1-AZ

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536

CEL

2SC5337_15

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

文件：99.31 Kbytes Page：7 Pages

RENESAS

瑞萨

2SC5337-A

RF & Microwave device

文件：137.58 Kbytes Page：2 Pages

RENESAS

瑞萨

2SC5337-AZ

封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 15V SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频

CEL

2SC5337产品属性

  • 类型

    描述

  • 型号

    2SC5337

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

2SC5337供应商更多...

更新时间：2025-9-30 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金芯世纪电子有限公司
2SC5337-T1
NEC
22+
SOT89
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
2SC5337-T1
NEC/RENESAS
24+
NA/
3920
原装现货,当天可交货,原型号开票
询价
深圳市华睿芯科技有限公司
2SC5338
NEC
24+
SOT89
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市振宏微科技有限公司
2SC5337
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市中联芯电子有限公司
2SC5337-T12SA1463-T1-AZ
RENESAS/瑞萨
24+
SOT89
7800
全新原厂原装正品现货,低价出售,实单可谈
询价
深圳市一线半导体有限公司
2SC5337
NEC
24+
SOT-89
6460
新进库存/原装
询价
深圳市宏捷佳电子科技有限公司
2SC5338-AZ
CEL
25+
TO-243AA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
深圳市明嘉莱科技有限公司
2SC5338
NEC
25+
SOT89
860000
明嘉莱只做原装正品现货
询价
齐创科技(上海,北京,青岛)有限公司
2SC5338
NEC
23+
SOT-89
30000
原装正品,假一罚十
询价
深圳诚思涵科技有限公司
2SC5338
NEC
19+
SOT89
20000
590
询价

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DdatasheetPDF页码索引

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