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2SC528晶体管资料

  • 2SC528别名:2SC528三极管、2SC528晶体管、2SC528晶体三极管

  • 2SC528生产厂家:日本日立公司

  • 2SC528制作材料:Si-NPN

  • 2SC528性质:通用型 (Uni)

  • 2SC528封装形式:直插封装

  • 2SC528极限工作电压:20V

  • 2SC528最大电流允许值:0.15A

  • 2SC528最大工作频率:100MHZ

  • 2SC528引脚数:3

  • 2SC528最大耗散功率:0.2W

  • 2SC528放大倍数

  • 2SC528图片代号:A-70

  • 2SC528vtest:20

  • 2SC528htest:100000000

  • 2SC528atest:0.15

  • 2SC528wtest:0.2

  • 2SC528代换 2SC528用什么型号代替:BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221,2N2222,3DG130M,

型号 功能描述 生产厂家 企业 LOGO 操作

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS ● High Voltage : VCBO = 1500 V ● Low Saturation Voltage : VCE (sat) = 5 V (Max.) ● High Speed : tf = 0.2 µs (Typ.) ● Bult−in Damper Type ● Collector Metal (Fin) is Fully Covered with Mold

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage • Low saturation voltage • High speed • Bult-in damper diode APPLICATIONS • High speed switching applications • Horizontal deflection output for medium resolution display,color TV

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage • Low saturation voltage • High speed • Bult-in damper diode APPLICATIONS • High speed switching applications • Horizontal deflection output for medium resolution display,color TV

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage • Low saturation voltage • High speed • Bult-in damper diode APPLICATIONS • High speed switching applications • Horizontal deflection output for medium resolution display,color TV

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications

JMNIC

锦美电子

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Application : Switching Regulator and General Purpose

SANKEN

三垦

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications

ISC

无锡固电

TVS二极管

硅 NPN 三重扩散型晶体管 ・高耐压品。\n・开关时间快。;

SANKEN

三垦

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.).FEATURES\n• P–1 = 24 dBm TYP.\n  @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8\n• 4-Pin Mini Mold Package\n  EIAJ: SC-61 • P–1 = 24 dBm TYP.\n  @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8\n• 4-Pin Mini Mold Package\n  EIAJ: SC-61 ;

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.). FEATURES • P–1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.). FEATURES • P–1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.). FEATURES • P–1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.). FEATURES • P–1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital cordless phones (DECT, PHS, etc.). FEATURES • P–1 = 27 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital cordless phones (DECT, PHS, etc.). FEATURES • P–1 = 27 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital cordless phones (DECT, PHS, etc.). FEATURES • P–1 = 27 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

RENESAS

瑞萨

Silicon NPN Power Transistor

文件:130.77 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:323.21 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:235.86 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:235.86 Kbytes Page:4 Pages

JMNIC

锦美电子

TO-3P Plastic-Encapsulate Transistors

文件:367.02 Kbytes Page:2 Pages

JIANGSU

长电科技

Silicon NPN Power Transistors

文件:175.59 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Triple Diffused Planar Transistor

文件:32.47 Kbytes Page:1 Pages

SANKEN

三垦

Silicon NPN Power Transistor

文件:127.41 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 550V 5A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

SANKEN

三垦

Silicon NPN Triple Diffused Planar Transistor

文件:32 Kbytes Page:1 Pages

SANKEN

三垦

Silicon NPN Power Transistors

文件:187.83 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:187.83 Kbytes Page:4 Pages

JMNIC

锦美电子

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

RENESAS

瑞萨

2SC528产品属性

  • 类型

    描述

  • 型号

    2SC528

  • 制造商

    SAVANTIC

  • 制造商全称

    Savantic, Inc.

  • 功能描述

    Silicon NPN Power Transistors

更新时间:2026-5-14 14:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
NEC
23+
SOT-143
6000
专业配单保证原装正品假一罚十
TOSHIBA/东芝
专业铁帽
CAN3
5600
原装铁帽专营,代理渠道量大可订货
ON
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
NEC
24+
SOT-143SOT-23-4
6200
新进库存/原装
SOT-143
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
2450+
SOT-143
8850
只做原装正品假一赔十为客户做到零风险!!
NEC
20+
SOT143
32970
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
22+
SOT143
20000
只做原装
SANYO
03+
TO-220
10000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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