2SC524晶体管资料

  • 2SC524别名:2SC524三极管、2SC524晶体管、2SC524晶体三极管

  • 2SC524生产厂家:日本东芝公司

  • 2SC524制作材料:Si-NPN

  • 2SC524性质:射频/高频放大 (HF)_开关管 (S)_功率放大 (L)

  • 2SC524封装形式:直插封装

  • 2SC524极限工作电压:100V

  • 2SC524最大电流允许值:1.5A

  • 2SC524最大工作频率:60MHZ

  • 2SC524引脚数:3

  • 2SC524最大耗散功率:10W

  • 2SC524放大倍数

  • 2SC524图片代号:E-36

  • 2SC524vtest:100

  • 2SC524htest:60000000

  • 2SC524atest:1.5

  • 2SC524wtest:10

  • 2SC524代换 2SC524用什么型号代替:BD139,BD169,BD179,BD230,BD237,BD379,BD441,2SD1177,2SD1178,3DK204B,

2SC524价格

参考价格:¥9.2751

型号:2SC5242-O(Q) 品牌:Toshiba 备注:这里有2SC524多少钱,2025年最近7天走势,今日出价,今日竞价,2SC524批发/采购报价,2SC524行情走势销售排行榜,2SC524报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SC524

HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS.

FEATURES: • High Breakdown Voltage : VCEO100V (2SC522) : Vceo= 60V (2SC524) • Useful attachment for Heat sink. • Various Uses for Medium Power : Ic=1.5A (Max.), Pc=10W (Max.)

TOSHIBA

东芝

Switching Power Transistor(5A NPN)

Switching Power Transistor

SHINDENGEN

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications

ISC

无锡固电

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

Fairchild

仙童半导体

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Breakdown Voltage-: V(BR)CEO = 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION · With TO-3P(I) package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

SAVANTIC

NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)

Power Amplifier Applications • High Collector breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

Fairchild

仙童半导体

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

Fairchild

仙童半导体

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

Panasonic

松下

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO =1700 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 3V(Max.)@ IC= 2.8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applicatio

ISC

无锡固电

High-speed switching

DESCRIPTION ·High breakdown voltage, and high reliability ·Wide area of safe operation (ASO) ·High-speed switching APPLICATIONS ·Designed for horizontal deflection output applications.

ISC

无锡固电

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

Panasonic

松下

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

Panasonic

松下

UHF to S-Band Low-Noise Amp, OSC Applications????

UHF to S-Band Low-Noise Amplifier, OSC Applications Features • Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). • High gain : |S21e|2=10dB typ (f=1.5GHz). • High cutoff frequency : fT=11GHz typ. • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=

SANYO

三洋

UHF to S-Band Low-Noise Amplifier OSC Applications

UHF to S-Band Low-Noise Amplifier OSC Applications Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA)

SANYO

三洋

RF Transistor 10V, 30mA, fT=8GHz, NPN Single MCP

Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ

ONSEMI

安森美半导体

RF Transistor 10V, 30mA, fT=8GHz, NPN Single MCP

Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ

ONSEMI

安森美半导体

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

HitachiHitachi Semiconductor

日立日立公司

For audio amplifier output stages/TV velocity modulation (-160V, -1.5A)

Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. 3) High ft. (Typ. 150MHz) 4) Wide SOA(safe operating area) 5) Complements the 2SC5248.

ROHM

罗姆

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

Sanken

三垦

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage switchihg transistor APPLICATIONS • For switching regulator and general purpose applications

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) • High Switching Speed APPLICATIONS • Designed for switching regulator and general purpose applications.

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) • High Switching Speed APPLICATIONS • Designed for switching regulator and general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:132.29 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:214.66 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistor

文件:129.139 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:176.54 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Triple Diffused Type Power Amplifier Applications

文件:122.03 Kbytes Page:4 Pages

TOSHIBA

东芝

NPN Epitaxial Silicon Transistor

文件:475.12 Kbytes Page:8 Pages

ONSEMI

安森美半导体

NPN外延硅晶体管

ONSEMI

安森美半导体

Silicon NPN Triple Diffused Type Power Amplifier Applications

文件:122.03 Kbytes Page:4 Pages

TOSHIBA

东芝

封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:TRANS NPN 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

NPN Epitaxial Silicon Transistor

文件:475.12 Kbytes Page:8 Pages

ONSEMI

安森美半导体

NPN Epitaxial Silicon Transistor

文件:475.12 Kbytes Page:8 Pages

ONSEMI

安森美半导体

封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:TRANS NPN 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

COLOUR TELEVISION C9PJ Chassis

文件:6.49885 Mbytes Page:126 Pages

TOSHIBA

东芝

COLOR TELEVISION

文件:2.69679 Mbytes Page:54 Pages

TOSHIBA

东芝

COLOR TELEVISION N1PS Chassis

文件:2.69679 Mbytes Page:54 Pages

TOSHIBA

东芝

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Panasonic

松下

双极晶体管

FOSHAN

蓝箭电子

Silicon NPN transistor in a TO-3P Plastic Package.

文件:1.07553 Mbytes Page:6 Pages

FOSHAN

蓝箭电子

UHF to S-Band Low-Noise Amplifier OSC Applications

文件:458.66 Kbytes Page:8 Pages

SANYO

三洋

UHF to S-Band Low-Noise Amplifier OSC Applications

文件:458.66 Kbytes Page:8 Pages

SANYO

三洋

iSC Silicon NPN Power Transistor

文件:125.58 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN transistor in a TO-220F Plastic Package.

文件:810.55 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

isc Silicon NPN Power Transistor

文件:250.69 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:242.2 Kbytes Page:4 Pages

SAVANTIC

2SC524产品属性

  • 类型

    描述

  • 型号

    2SC524

  • 功能描述

    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-37VAR

更新时间:2025-11-21 11:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
23+
NA
12730
原装正品代理渠道价格优势
SANYO/三洋
2447
SOT323
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SANYO
1922+
SOT-89
35689
原装进口现货库存专业工厂研究所配单供货
TOSHIBA
23+
5000
专注配单,只做原装进口现货
ON
24+
TO-3P-3L
25000
ON全系列可订货
ROHM/罗姆
23+
TO-220F
50000
全新原装正品现货,支持订货
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
TOS
25+
TO-3P
30000
代理全新原装现货,价格优势
TOSHIBA/东芝
专业铁帽
CAN3
5600
原装铁帽专营,代理渠道量大可订货
台产
24+
SOT-323
7800
全新原厂原装正品现货,低价出售,实单可谈

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