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2SC524晶体管资料
2SC524别名:2SC524三极管、2SC524晶体管、2SC524晶体三极管
2SC524生产厂家:日本东芝公司
2SC524制作材料:Si-NPN
2SC524性质:射频/高频放大 (HF)_开关管 (S)_功率放大 (L)
2SC524封装形式:直插封装
2SC524极限工作电压:100V
2SC524最大电流允许值:1.5A
2SC524最大工作频率:60MHZ
2SC524引脚数:3
2SC524最大耗散功率:10W
2SC524放大倍数:
2SC524图片代号:E-36
2SC524vtest:100
2SC524htest:60000000
- 2SC524atest:1.5
2SC524wtest:10
2SC524代换 2SC524用什么型号代替:BD139,BD169,BD179,BD230,BD237,BD379,BD441,2SD1177,2SD1178,3DK204B,
2SC524价格
参考价格:¥9.2751
型号:2SC5242-O(Q) 品牌:Toshiba 备注:这里有2SC524多少钱,2025年最近7天走势,今日出价,今日竞价,2SC524批发/采购报价,2SC524行情走势销售排行榜,2SC524报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC524 | HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. FEATURES: • High Breakdown Voltage : VCEO100V (2SC522) : Vceo= 60V (2SC524) • Useful attachment for Heat sink. • Various Uses for Medium Power : Ic=1.5A (Max.), Pc=10W (Max.) | TOSHIBA 东芝 | ||
Switching Power Transistor(5A NPN) Switching Power Transistor | SHINDENGEN | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications | ISC 无锡固电 | |||
NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42 | Fairchild 仙童半导体 | |||
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Breakdown Voltage-: V(BR)CEO = 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION · With TO-3P(I) package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage | SAVANTIC | |||
NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS) Power Amplifier Applications • High Collector breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42 | Fairchild 仙童半导体 | |||
NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42 | Fairchild 仙童半导体 | |||
Silicon NPN triple diffusion mesa type(For horizontal deflection output) For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO) | Panasonic 松下 | |||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO =1700 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 3V(Max.)@ IC= 2.8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applicatio | ISC 无锡固电 | |||
High-speed switching DESCRIPTION ·High breakdown voltage, and high reliability ·Wide area of safe operation (ASO) ·High-speed switching APPLICATIONS ·Designed for horizontal deflection output applications. | ISC 无锡固电 | |||
Silicon NPN triple diffusion mesa type(For horizontal deflection output) For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO) | Panasonic 松下 | |||
Silicon NPN triple diffusion mesa type(For horizontal deflection output) For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO) | Panasonic 松下 | |||
UHF to S-Band Low-Noise Amp, OSC Applications???? UHF to S-Band Low-Noise Amplifier, OSC Applications Features • Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). • High gain : |S21e|2=10dB typ (f=1.5GHz). • High cutoff frequency : fT=11GHz typ. • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT= | SANYO 三洋 | |||
UHF to S-Band Low-Noise Amplifier OSC Applications UHF to S-Band Low-Noise Amplifier OSC Applications Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) | SANYO 三洋 | |||
RF Transistor 10V, 30mA, fT=8GHz, NPN Single MCP Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ | ONSEMI 安森美半导体 | |||
RF Transistor 10V, 30mA, fT=8GHz, NPN Single MCP Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ | ONSEMI 安森美半导体 | |||
Silicon NPN Epitaxial Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon NPN Epitaxial Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
For audio amplifier output stages/TV velocity modulation (-160V, -1.5A) Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. 3) High ft. (Typ. 150MHz) 4) Wide SOA(safe operating area) 5) Complements the 2SC5248. | ROHM 罗姆 | |||
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose | Sanken 三垦 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • High voltage switchihg transistor APPLICATIONS • For switching regulator and general purpose applications | SAVANTIC | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) • High Switching Speed APPLICATIONS • Designed for switching regulator and general purpose applications. | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) • High Switching Speed APPLICATIONS • Designed for switching regulator and general purpose applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors 文件:132.29 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors 文件:214.66 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon NPN Power Transistor 文件:129.139 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors 文件:176.54 Kbytes Page:4 Pages | SAVANTIC | |||
Silicon NPN Triple Diffused Type Power Amplifier Applications 文件:122.03 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
NPN Epitaxial Silicon Transistor 文件:475.12 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
NPN外延硅晶体管 | ONSEMI 安森美半导体 | |||
Silicon NPN Triple Diffused Type Power Amplifier Applications 文件:122.03 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:TRANS NPN 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
NPN Epitaxial Silicon Transistor 文件:475.12 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
NPN Epitaxial Silicon Transistor 文件:475.12 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:TRANS NPN 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
COLOUR TELEVISION C9PJ Chassis 文件:6.49885 Mbytes Page:126 Pages | TOSHIBA 东芝 | |||
COLOR TELEVISION 文件:2.69679 Mbytes Page:54 Pages | TOSHIBA 东芝 | |||
COLOR TELEVISION N1PS Chassis 文件:2.69679 Mbytes Page:54 Pages | TOSHIBA 东芝 | |||
Silicon NPN triple diffusion mesa type(For horizontal deflection output) | Panasonic 松下 | |||
双极晶体管 | FOSHAN 蓝箭电子 | |||
Silicon NPN transistor in a TO-3P Plastic Package. 文件:1.07553 Mbytes Page:6 Pages | FOSHAN 蓝箭电子 | |||
UHF to S-Band Low-Noise Amplifier OSC Applications 文件:458.66 Kbytes Page:8 Pages | SANYO 三洋 | |||
UHF to S-Band Low-Noise Amplifier OSC Applications 文件:458.66 Kbytes Page:8 Pages | SANYO 三洋 | |||
iSC Silicon NPN Power Transistor 文件:125.58 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN transistor in a TO-220F Plastic Package. 文件:810.55 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | |||
isc Silicon NPN Power Transistor 文件:250.69 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon NPN Power Transistors 文件:242.2 Kbytes Page:4 Pages | SAVANTIC |
2SC524产品属性
- 类型
描述
- 型号
2SC524
- 功能描述
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-37VAR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
|||
SANYO/三洋 |
2447 |
SOT323 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SANYO |
1922+ |
SOT-89 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
TOSHIBA |
23+ |
5000 |
专注配单,只做原装进口现货 |
||||
ON |
24+ |
TO-3P-3L |
25000 |
ON全系列可订货 |
|||
ROHM/罗姆 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
TOS |
25+ |
TO-3P |
30000 |
代理全新原装现货,价格优势 |
|||
TOSHIBA/东芝 |
专业铁帽 |
CAN3 |
5600 |
原装铁帽专营,代理渠道量大可订货 |
|||
台产 |
24+ |
SOT-323 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
2SC524规格书下载地址
2SC524参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SC5260
- 2SC526
- 2SC5259
- 2SC5258
- 2SC5257
- 2SC5256(F)
- 2SC5256
- 2SC5255
- 2SC5254
- 2SC5252
- 2SC5251
- 2SC5250
- 2SC525
- 2SC5249
- 2SC5248
- 2SC5247
- 2SC5246
- 2SC5245
- 2SC5244A
- 2SC5244
- 2SC5243
- 2SC5242
- 2SC5241
- 2SC5239
- 2SC5238
- 2SC5237
- 2SC5235
- 2SC5233
- 2SC5232
- 2SC5231
- 2SC5230
- 2SC523
- 2SC5229
- 2SC5228
- 2SC5227
- 2SC5226
- 2SC5225
- 2SC5224
- 2SC5223
- 2SC5222
- 2SC5221
- 2SC522
- 2SC521A
- 2SC5219
- 2SC5218
- 2SC5216
- 2SC5214
- 2SC5213
- 2SC5212
- 2SC5211
2SC524数据表相关新闻
2SC4617G-SOT323R-R-TG_UTC代理商
2SC4617G-SOT323R-R-TG_UTC代理商
2023-2-152SC5353BL-TO126CK-TG
2SC5353BL-TO126CK-TG
2023-1-302SC5569G-SOT89R-TG
2SC5569G-SOT89R-TG
2023-1-302SC5015-T1
https://hch01.114ic.com/
2020-11-132SC5299
2SC5299,全新原装当天发货或门市自取0755-82732291.
2020-4-242SC4617TLR
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱:yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-22
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