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位置：首页 > IC中文资料第7215页 > 2SC524

2SC524晶体管资料

  • 2SC524别名：2SC524三极管、2SC524晶体管、2SC524晶体三极管

  • 2SC524生产厂家：日本东芝公司

  • 2SC524制作材料：Si-NPN

  • 2SC524性质：射频/高频放大 （HF）_开关管 （S）_功率放大 （L）

  • 2SC524封装形式：直插封装

  • 2SC524极限工作电压：100V

  • 2SC524最大电流允许值：1.5A

  • 2SC524最大工作频率：60MHZ

  • 2SC524引脚数：3

  • 2SC524最大耗散功率：10W

  • 2SC524放大倍数：

  • 2SC524图片代号：E-36

  • 2SC524vtest：100

  • 2SC524htest：60000000

  • 2SC524atest：1.5

  • 2SC524wtest：10

  • 2SC524代换 2SC524用什么型号代替：BD139,BD169,BD179,BD230,BD237,BD379,BD441,2SD1177,2SD1178,3DK204B,

2SC524价格

参考价格：￥9.2751

型号：2SC5242-O(Q) 品牌：Toshiba 备注：这里有2SC524多少钱，2025年最近7天走势，今日出价，今日竞价，2SC524批发/采购报价，2SC524行情走势销售排行榜，2SC524报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC524

HIGHFREQUENCYAMPLIFIERAPPLICATIONS.HIGHVOLTAGESWITCHINGAPPLICATIONS.REGULATORAPPLICATIONS.

FEATURES: •HighBreakdownVoltage:VCEO100V(2SC522) :Vceo=60V(2SC524) •UsefulattachmentforHeatsink. •VariousUsesforMediumPower :Ic=1.5A(Max.),Pc=10W(Max.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC5241

SwitchingPowerTransistor(5ANPN)

SwitchingPowerTransistor

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新电元工业株式会社

SHINDENGEN
2SC5241

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Highvoltage,highspeedswitching APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5241

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Highvoltage,highspeedswitching APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5242

NPNEpitaxialSiliconTransistor

NPNEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=15A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=230V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1962/FJA42

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2SC5242

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SA1962 ·Highcollectorvoltage:VCEO=230V(Min) APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5242

NPNTRIPLEDIFFUSED(FORPOWERAMPLIFIERAPLLICATIONS)

PowerAmplifierApplications •HighCollectorbreakdownvoltage:VCEO=230V(min) •Complementaryto2SA1962 •Suitablefrousein80-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC5242

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollectorBreakdownVoltage-:V(BR)CEO=230V(Min.) ·GoodLinearityofhFE ·ComplementtoType2SA1962 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudiofrequencyamplifieroutputstageapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5242

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC5242OTU

NPNEpitaxialSiliconTransistor

NPNEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=15A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=230V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1962/FJA42

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2SC5242RTU

NPNEpitaxialSiliconTransistor

NPNEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=15A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=230V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1962/FJA42

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2SC5243

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

Forhorizontaldeflectionoutput ■Features ●Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer ●High-speedswitching ●Wideareaofsafeoperation(ASO)

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SC5243

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage VCEO=1700V(Min) ·LowCollectorSaturationVoltage :VCE(sat)=3V(Max.)@IC=2.8A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforhighvoltageandgeneralpurposeapplicatio

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5244

High-speedswitching

DESCRIPTION ·Highbreakdownvoltage,andhighreliability ·Wideareaofsafeoperation(ASO) ·High-speedswitching APPLICATIONS ·Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5244

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

Forhorizontaldeflectionoutput ■Features ●Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer ●High-speedswitching ●Wideareaofsafeoperation(ASO)

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SC5244A

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

Forhorizontaldeflectionoutput ■Features ●Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer ●High-speedswitching ●Wideareaofsafeoperation(ASO)

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SC5245

UHFtoS-BandLow-NoiseAmp,OSCApplications????

UHFtoS-BandLow-NoiseAmplifier,OSCApplications Features •Lownoise:NF=0.9dBtyp(f=1GHz). :NF=1.4dBtyp(f=1.5GHz). •Highgain:|S21e|2=10dBtyp(f=1.5GHz). •Highcutofffrequency:fT=11GHztyp. •Low-voltage,low-currentoperation(VCE=1V,IC=1mA) :fT=

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5245A

UHFtoS-BandLow-NoiseAmplifierOSCApplications

UHFtoS-BandLow-NoiseAmplifierOSCApplications Features •Low-noise:NF=0.9dBtyp(f=1GHz) :NF=1.4dBtyp(f=1.5GHz) •Highgain:⏐S21e⏐2=10dBtyp(f=1.5GHz) •Highcut-offfrequency:fT=8GHztyp •Low-voltage,low-currentoperation(VCE=1V,IC=1mA)

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5245A

RFTransistor10V,30mA,fT=8GHz,NPNSingleMCP

Features •Low-noise:NF=0.9dBtyp(f=1GHz) :NF=1.4dBtyp(f=1.5GHz) •Highgain:⏐S21e⏐2=10dBtyp(f=1.5GHz) •Highcut-offfrequency:fT=8GHztyp •Low-voltage,low-currentoperation(VCE=1V,IC=1mA) :fT=3.5GHztyp

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5245A-4-TL-E

RFTransistor10V,30mA,fT=8GHz,NPNSingleMCP

Features •Low-noise:NF=0.9dBtyp(f=1GHz) :NF=1.4dBtyp(f=1.5GHz) •Highgain:⏐S21e⏐2=10dBtyp(f=1.5GHz) •Highcut-offfrequency:fT=8GHztyp •Low-voltage,low-currentoperation(VCE=1V,IC=1mA) :fT=3.5GHztyp

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5246

SiliconNPNEpitaxial

Features •HighgainbandwidthproductfT=12GHztyp •Highgain,lownoisefigurePG=16.5dBtyp,NF=1.6dBtypatf=900MHz Application VHF/UHFwidebandamplifier

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SC5247

SiliconNPNEpitaxial

Features •HighgainbandwidthproductfT=13.5GHztyp •Highgain,lownoisefigurePG=17dBtyp,NF=1.2dBtypatf=900MHz Application VHF/UHFwidebandamplifier

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SC5248

Foraudioamplifieroutputstages/TVvelocitymodulation(-160V,-1.5A)

Features 1)FlatDCcurrentgaincharacteristics. 2)Highbreakdownvoltage. 3)Highft.(Typ.150MHz) 4)WideSOA(safeoperatingarea) 5)Complementsthe2SC5248.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SC5249

SiliconNPNTripleDiffusedPlanarTransistor(SwitchingRegulatorandGeneralPurpose)

SiliconNPNTripleDiffusedPlanarTransistor(HighVoltageSwitchihgTransistor) Application:SwitchingRegulatorandGeneralPurpose

SankenSanken electric

三垦三垦电气株式会社

Sanken
2SC5249

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Highvoltageswitchihgtransistor APPLICATIONS •Forswitchingregulatorandgeneralpurposeapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5249

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=600V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforswitchingregulatorandgeneralpurposeapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5249

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=600V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforswitchingregulatorandgeneralpurposeapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SC5241

SiliconNPNPowerTransistors

文件：132.29 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SC5241

SiliconNPNPowerTransistors

文件：214.66 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5242

SiliconNPNPowerTransistor

文件：129.139 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SC5242

SiliconNPNPowerTransistors

文件：176.54 Kbytes Page：4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5242

SiliconNPNTripleDiffusedTypePowerAmplifierApplications

文件：122.03 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC5242

NPNEpitaxialSiliconTransistor

文件：475.12 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5242_06

SiliconNPNTripleDiffusedTypePowerAmplifierApplications

文件：122.03 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC5242OTU

NPNEpitaxialSiliconTransistor

文件：475.12 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5242OTU

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：TRANS NPN 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5242RTU

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：TRANS NPN 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5242RTU

NPNEpitaxialSiliconTransistor

文件：475.12 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5243

COLOURTELEVISIONC9PJChassis

文件：6.49885 Mbytes Page：126 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC5243

COLORTELEVISION

文件：2.69679 Mbytes Page：54 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC5243

COLORTELEVISIONN1PSChassis

文件：2.69679 Mbytes Page：54 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC5244

SiliconNPNtransistorinaTO-3PPlasticPackage.

文件：1.07553 Mbytes Page：6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC5245A

UHFtoS-BandLow-NoiseAmplifierOSCApplications

文件：458.66 Kbytes Page：8 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5245A_12

UHFtoS-BandLow-NoiseAmplifierOSCApplications

文件：458.66 Kbytes Page：8 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5248

iSCSiliconNPNPowerTransistor

文件：125.58 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SC5248

SiliconNPNtransistorinaTO-220FPlasticPackage.

文件：810.55 Kbytes Page：6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC5248

iscSiliconNPNPowerTransistor

文件：250.69 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5249

SiliconNPNPowerTransistors

文件：242.2 Kbytes Page：4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

2SC524产品属性

  • 类型

    描述

  • 型号

    2SC524

  • 功能描述

    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-37VAR

2SC524供应商更多...

更新时间：2025-7-6 17:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市明嘉莱科技有限公司
2sc5241
FAIRCHILD/仙童
24+
TO 220
155789
明嘉莱只做原装正品现货
询价
深圳兆威电子有限公司
2SC5247
RENESAS
23+
SOT-70
63000
原装正品现货
询价
深圳市华斯顿科技有限公司
2SC5242
TOSHIBA
25+23+
TO-3P
34093
绝对原装正品全新进口深圳现货
询价
深圳市胜彬电子有限公司
2SC5245A-3-TL
SANYO/三洋
22+
SOT323
8000
原装正品支持实单
询价
深圳市中联芯电子有限公司
2SC5245A-4-TL-ESi1317DL-T1-GE3
台产
24+
SOT-323
7800
全新原厂原装正品现货,低价出售,实单可谈
询价
深圳市向鸿伟业电子有限公司
2SC5242
TOSHIBA/东芝
24+
TO-3P
7671
原装正品.优势专营
询价
深圳宇航军工半导体有限公司
2SC5244
松下
19+
TO-3P
59339
原厂代理渠道,每一颗芯片都可追溯原厂；
询价
深圳市科恒伟业电子有限公司
2SC5242-R
TOSHIBA
1844+
to3p
9852
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市百诺芯科技有限公司
2SC5245A-4-TL-E
ON/安森美
23+
NA
12730
原装正品代理渠道价格优势
询价
深圳市一线半导体有限公司
2SC5249
24+
TO-220
10000
全新
询价

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