NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

NPN Epitaxial Silicon Transistor

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封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：TRANS NPN 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)

Power Amplifier Applications • High Collector breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

Silicon NPN Power Transistors

DESCRIPTION · With TO-3P(I) package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Breakdown Voltage-: V(BR)CEO = 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications

Silicon NPN Triple Diffused Type Power Amplifier Applications

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