2SC520晶体管资料

  • 2SC520别名:2SC520三极管、2SC520晶体管、2SC520晶体三极管

  • 2SC520生产厂家:日本东芝公司

  • 2SC520制作材料:Si-NPN

  • 2SC520性质:开关管 (S)_功率放大 (L)

  • 2SC520封装形式:直插封装

  • 2SC520极限工作电压:80V

  • 2SC520最大电流允许值:7A

  • 2SC520最大工作频率:<1MHZ或未知

  • 2SC520引脚数:2

  • 2SC520最大耗散功率:50W

  • 2SC520放大倍数

  • 2SC520图片代号:E-44

  • 2SC520vtest:80

  • 2SC520htest:999900

  • 2SC520atest:7

  • 2SC520wtest:50

  • 2SC520代换 2SC520用什么型号代替:BU109,BU110,BU210,BUY20,BUY77,3DK206B,

2SC520价格

参考价格:¥7.0021

型号:2SC5200N(S1,E,S) 品牌:Toshiba 备注:这里有2SC520多少钱,2025年最近7天走势,今日出价,今日竞价,2SC520批发/采购报价,2SC520行情走势销售排行榜,2SC520报价。
型号 功能描述 生产厂家&企业 LOGO 操作

POWERAMPLIFIERAPPLICATIONS

POWERAMPLIFIERAPPLICATIONS FEATURES *Recommendedfor100WHighFidelityAudioFrequency AmplifierOutputStage. *ComplementarytoUTC2SA1943

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNEpitaxialSiliconTransistor

1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCurrentCapability ·HighPowerDissipation ·HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=230V(Min) ·ComplementtoType2SA1943 APPLICATIONS ·Poweramplifierapplications ·Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SA1943 APPLICATIONS •Highcurrentswitching •Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC

POWERAMPLIFIERAPPLICATION

•Complementaryto2SA1943 •Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

HighpowerNPNepitaxialplanarbipolartransistor

Description ThisdeviceisaNPNtransistormanufacturedusingnewBiT-LA(bipolartransistorforlinearamplifier)technology.Theresultingtransistorshowsgoodgainlinearitybehaviour. Features ■HighbreakdownvoltageVCEO=230V ■TypicalfT=30MHz Application ■Audiopoweramplif

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

150WattSiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SA1943 APPLICATIONS ·Highcurrentswitching ·Recommendedfor100Whighfidelityaudiofrequencyamplifieroutputstage

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=300V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=3.0V(Max)@IC=8A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HighpowerNPNepitaxialplanarbipolartransistor

Features ■HighbreakdownvoltageVCEO=230V ■TypicalfT=30MHz Application ■Audiopoweramplifier Description ThisdeviceisaNPNtransistormanufactured usingnewBiT-LA(bipolartransistorforlinear amplifier)technology.Theresultingtransistor showsgoodgainlinearityb

SYC

SYC Electronica

SYC

150WattSiliconEpitaxialPlanarNPNPowerTransistor

DESCRIPTION ·WithTO-3PN-SQpackage ·Complementtotype2SA1943N APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI

poweramplifierapplications

POWERAMPLIFIERAPPLICATIONS •Complementaryto2SA1943 ​​​​​​​•Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNEpitaxialSiliconTransistor

1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNEpitaxialSiliconTransistor

1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDMESATYPE(HIGHVOLTAGESWITCHINGAPPLICATIONS)

High-VoltageSwitchingApplications •Highbreakdownvoltage:VCEO=600V •Lowsaturationvoltage:VCE(sat)=1.0V(max) (IC=20mA,IB=0.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SILICONNPNTRIPLEDIFFUSEDPLANAR

SiliconNPNTripleDiffusedPlanar Features •Highspeedswitching tf=0.2µsec(typ) •Widedrivecurrentcapability

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNPNTripleDiffusedTypeHigh-VoltageSwitchingApplications

High-VoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications DC-ACInverterApplications •High-speedswitching:tr=1.0μs(max),tf=1.5μs(max) •Highbreakdownvoltage:VCEO=400V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SmallSignalTransistor

■Features ●HighhFE:hFE=600to1800 ●Highbreakdownvoltage ●Smallpackageformounting ●Complementaryto2SA1944

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

FORRELAYDRIVEPOWERSUPPLYAPPLICATIONSILICONNPNEPITAXIALTYPE

[IsahayaElectronicsCorporation] DESCRIPTION 2SC5209isasiliconNPNepitaxialtypetransistor.Itdesignedwithhighvoltage,highcollectorcurrentandhighhFE. Complementarywith2SA1944. FEATURES ●HighvoltageVCEO=50V ●Smallcollectortoemittersaturationvoltage VCE(sat)

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SMALL-SIGNALTRANSISTOR

DESCRIPTION 2SC5209isasiliconNPNepitaxialtypetransistor.Itdesignedwithhighvoltage,highcollectorcurrentandhighhFE. Complementarywith2SA1944. FEATURES ●HighvoltageVCEO=50V ●Smallcollectortoemittersaturationvoltage VCE(sat)=0.15Vtyp(@IC=500mA,IB=10mA

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

150WattSiliconEpitaxialPlanarNPNPowerTransistor

文件:281.75 Kbytes Page:2 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI

TO-3PPlastic-EncapsulateTransistors

文件:377.77 Kbytes Page:2 Pages

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

SiliconNPNPowerTransistors

文件:231.01 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

PowerAmplifierApplications

文件:127.51 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNtransistorinaTO-3PPlasticPackage.

文件:921.21 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER

文件:177.43 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PowerAmplifierApplications

文件:127.51 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER

文件:177.43 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

150WattSiliconEpitaxialPlanarNPNPowerTransistor

文件:281.75 Kbytes Page:2 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI

PowerAmplifierApplications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

iscSiliconNPNPowerTransistor

文件:273.15 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-3PL 包装:散装 描述:TRANS NPN 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER

文件:177.43 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNTripleDiffusedMesaTypeHigh-VoltageSwitchingApplications

文件:99.14 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SC520产品属性

  • 类型

    描述

  • 型号

    2SC520

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3 80V 7A 50W BEC

更新时间:2025-7-5 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MITSUBISHI/三菱
24+
NA/
3045
优势代理渠道,原装正品,可全系列订货开增值税票
MITSUBTSHI
22+
SOT-89
100000
代理渠道/只做原装/可含税
HITACHI
25+
TO-3P
54648
百分百原装现货 实单必成 欢迎询价
HITACHI
24+
TO-3P
990000
明嘉莱只做原装正品现货
MITSUBIS
SOT-89
16000
一级代理 原装正品假一罚十价格优势长期供货
MITSUBISHI
20+
SOT-89
2148
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NK/南科功率
2025+
SOT-89
986966
国产
MITSUBISHI/三菱
21+
SOT-89
120000
长期代理优势供应
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!
HIT
25+23+
TO-247
27264
绝对原装正品全新进口深圳现货

2SC520芯片相关品牌

  • ANALOGICTECH
  • ASTRODYNE
  • CT
  • DSK
  • EIC
  • EMCORE
  • EXXELIA
  • MTRONPTI
  • NTE
  • P-TEC
  • WECO
  • Yamaha

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