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2SC520晶体管资料
2SC520别名:2SC520三极管、2SC520晶体管、2SC520晶体三极管
2SC520生产厂家:日本东芝公司
2SC520制作材料:Si-NPN
2SC520性质:开关管 (S)_功率放大 (L)
2SC520封装形式:直插封装
2SC520极限工作电压:80V
2SC520最大电流允许值:7A
2SC520最大工作频率:<1MHZ或未知
2SC520引脚数:2
2SC520最大耗散功率:50W
2SC520放大倍数:
2SC520图片代号:E-44
2SC520vtest:80
2SC520htest:999900
- 2SC520atest:7
2SC520wtest:50
2SC520代换 2SC520用什么型号代替:BU109,BU110,BU210,BUY20,BUY77,3DK206B,
2SC520价格
参考价格:¥7.0021
型号:2SC5200N(S1,E,S) 品牌:Toshiba 备注:这里有2SC520多少钱,2025年最近7天走势,今日出价,今日竞价,2SC520批发/采购报价,2SC520行情走势销售排行榜,2SC520报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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POWERAMPLIFIERAPPLICATIONS POWERAMPLIFIERAPPLICATIONS FEATURES *Recommendedfor100WHighFidelityAudioFrequency AmplifierOutputStage. *ComplementarytoUTC2SA1943 | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
NPNEpitaxialSiliconTransistor 1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCurrentCapability ·HighPowerDissipation ·HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=230V(Min) ·ComplementtoType2SA1943 APPLICATIONS ·Poweramplifierapplications ·Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PLpackage •Complementtotype2SA1943 APPLICATIONS •Highcurrentswitching •Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | SAVANTIC Savantic, Inc. | |||
POWERAMPLIFIERAPPLICATION •Complementaryto2SA1943 •Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
HighpowerNPNepitaxialplanarbipolartransistor Description ThisdeviceisaNPNtransistormanufacturedusingnewBiT-LA(bipolartransistorforlinearamplifier)technology.Theresultingtransistorshowsgoodgainlinearitybehaviour. Features ■HighbreakdownvoltageVCEO=230V ■TypicalfT=30MHz Application ■Audiopoweramplif | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
150WattSiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SA1943 APPLICATIONS ·Highcurrentswitching ·Recommendedfor100Whighfidelityaudiofrequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=300V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=3.0V(Max)@IC=8A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HighpowerNPNepitaxialplanarbipolartransistor Features ■HighbreakdownvoltageVCEO=230V ■TypicalfT=30MHz Application ■Audiopoweramplifier Description ThisdeviceisaNPNtransistormanufactured usingnewBiT-LA(bipolartransistorforlinear amplifier)technology.Theresultingtransistor showsgoodgainlinearityb | SYC SYC Electronica | |||
150WattSiliconEpitaxialPlanarNPNPowerTransistor DESCRIPTION ·WithTO-3PN-SQpackage ·Complementtotype2SA1943N APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
poweramplifierapplications POWERAMPLIFIERAPPLICATIONS •Complementaryto2SA1943 •Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNEpitaxialSiliconTransistor 1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPNEpitaxialSiliconTransistor 1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPNEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNTRIPLEDIFFUSEDMESATYPE(HIGHVOLTAGESWITCHINGAPPLICATIONS) High-VoltageSwitchingApplications •Highbreakdownvoltage:VCEO=600V •Lowsaturationvoltage:VCE(sat)=1.0V(max) (IC=20mA,IB=0.5mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SILICONNPNTRIPLEDIFFUSEDPLANAR SiliconNPNTripleDiffusedPlanar Features •Highspeedswitching tf=0.2µsec(typ) •Widedrivecurrentcapability | HitachiHitachi Semiconductor 日立日立公司 | |||
SiliconNPNTripleDiffusedTypeHigh-VoltageSwitchingApplications High-VoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications DC-ACInverterApplications •High-speedswitching:tr=1.0μs(max),tf=1.5μs(max) •Highbreakdownvoltage:VCEO=400V | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SmallSignalTransistor ■Features ●HighhFE:hFE=600to1800 ●Highbreakdownvoltage ●Smallpackageformounting ●Complementaryto2SA1944 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
FORRELAYDRIVEPOWERSUPPLYAPPLICATIONSILICONNPNEPITAXIALTYPE [IsahayaElectronicsCorporation] DESCRIPTION 2SC5209isasiliconNPNepitaxialtypetransistor.Itdesignedwithhighvoltage,highcollectorcurrentandhighhFE. Complementarywith2SA1944. FEATURES ●HighvoltageVCEO=50V ●Smallcollectortoemittersaturationvoltage VCE(sat) | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SMALL-SIGNALTRANSISTOR DESCRIPTION 2SC5209isasiliconNPNepitaxialtypetransistor.Itdesignedwithhighvoltage,highcollectorcurrentandhighhFE. Complementarywith2SA1944. FEATURES ●HighvoltageVCEO=50V ●Smallcollectortoemittersaturationvoltage VCE(sat)=0.15Vtyp(@IC=500mA,IB=10mA | ISAHAYAIsahaya Electronics Corporation 谏早电子谏早电子株式会社 | |||
150WattSiliconEpitaxialPlanarNPNPowerTransistor 文件:281.75 Kbytes Page:2 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
TO-3PPlastic-EncapsulateTransistors 文件:377.77 Kbytes Page:2 Pages | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
SiliconNPNPowerTransistors 文件:231.01 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
PowerAmplifierApplications 文件:127.51 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNtransistorinaTO-3PPlasticPackage. 文件:921.21 Kbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER 文件:177.43 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PowerAmplifierApplications 文件:127.51 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER 文件:177.43 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
150WattSiliconEpitaxialPlanarNPNPowerTransistor 文件:281.75 Kbytes Page:2 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
PowerAmplifierApplications 文件:330.15 Kbytes Page:5 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
PowerAmplifierApplications 文件:330.15 Kbytes Page:5 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
PowerAmplifierApplications 文件:330.15 Kbytes Page:5 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
PowerAmplifierApplications 文件:330.15 Kbytes Page:5 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
PowerAmplifierApplications 文件:283.18 Kbytes Page:5 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
PowerAmplifierApplications 文件:283.18 Kbytes Page:5 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
PowerAmplifierApplications 文件:283.18 Kbytes Page:5 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
PowerAmplifierApplications 文件:283.18 Kbytes Page:5 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
iscSiliconNPNPowerTransistor 文件:273.15 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
封装/外壳:TO-3PL 包装:散装 描述:TRANS NPN 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SiliconNPNTripleDiffusedTransistor 文件:571.19 Kbytes Page:8 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER 文件:177.43 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconNPNTripleDiffusedMesaTypeHigh-VoltageSwitchingApplications 文件:99.14 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |
2SC520产品属性
- 类型
描述
- 型号
2SC520
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-3 80V 7A 50W BEC
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
24+ |
NA/ |
3045 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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MITSUBTSHI |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
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HITACHI |
25+ |
TO-3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
HITACHI |
24+ |
TO-3P |
990000 |
明嘉莱只做原装正品现货 |
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MITSUBIS |
SOT-89 |
16000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MITSUBISHI |
20+ |
SOT-89 |
2148 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NK/南科功率 |
2025+ |
SOT-89 |
986966 |
国产 |
|||
MITSUBISHI/三菱 |
21+ |
SOT-89 |
120000 |
长期代理优势供应 |
|||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
HIT |
25+23+ |
TO-247 |
27264 |
绝对原装正品全新进口深圳现货 |
2SC520规格书下载地址
2SC520参数引脚图相关
- 500t
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- 4921
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- 485接口
- 47471
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- 4069
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- 3q1
- 3g汽车
- 3579
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- 2SC5225
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- 2SC522
- 2SC521A
- 2SC5219
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- 2SC5214
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- 2SC5212
- 2SC5211
- 2SC5210
- 2SC521
- 2SC520A
- 2SC5209
- 2SC5208
- 2SC5207A
- 2SC5206
- 2SC5201
- 2SC5200
- 2SC52
- 2SC519A
- 2SC5199
- 2SC5198
- 2SC5197
- 2SC5196
- 2SC5195
- 2SC5194
- 2SC5193
- 2SC5192(R)
- 2SC5192
- 2SC5191
- 2SC5190
- 2SC519
- 2SC518A
- 2SC5189
- 2SC5188
- 2SC5187
- 2SC5186
- 2SC5185
- 2SC5184
- 2SC5183
- 2SC5182
- 2SC5181
- 2SC5180
- 2SC5179
- 2SC5178
- 2SC5177
2SC520数据表相关新闻
2SC4617G-SOT323R-R-TG_UTC代理商
2SC4617G-SOT323R-R-TG_UTC代理商
2023-2-152SC5353BL-TO126CK-TG
2SC5353BL-TO126CK-TG
2023-1-302SC5569G-SOT89R-TG
2SC5569G-SOT89R-TG
2023-1-302SC5015-T1
https://hch01.114ic.com/
2020-11-132SC5299
2SC5299,全新原装当天发货或门市自取0755-82732291.
2020-4-242SC4617TLR
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-22
DdatasheetPDF页码索引
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