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2SC518晶体管资料
2SC518别名：2SC518三极管、2SC518晶体管、2SC518晶体三极管
2SC518生产厂家：日本东芝公司
2SC518制作材料：Si-NPN
2SC518性质：电视 （TV）_行输出 （HA）
2SC518封装形式：直插封装
2SC518极限工作电压：140V
2SC518最大电流允许值：5A
2SC518最大工作频率：<1MHZ或未知
2SC518引脚数：2
2SC518最大耗散功率：50W
2SC518放大倍数：
2SC518图片代号：E-44
2SC518vtest：140
2SC518htest：999900
- 2SC518atest：5
2SC518wtest：50
2SC518代换 2SC518用什么型号代替：BU104,BU109,BU110,BU210,BU606,BU607,BU608,BUY20,BUY77,2SD916,2SD1154,3DK206C,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Supper Mini-Mold package | NEC 瑞萨 |   | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD | RENESAS 瑞萨 | | ||
SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2= 10.5 dBTYP.@ VCE= 2 V, IC= 7 mA, f = 2 GHz |S21e|2= 9.0 dBTYP.@VCE= 1 V, IC= 5 mA, f = 2 GHz • Ultra Super Mini-Mold package | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2= 10.5 dBTYP.@ VCE= 2 V, IC= 7 mA, f = 2 GHz |S21e|2= 9.0 dBTYP.@VCE= 1 V, IC= 5 mA, f = 2 GHz • Ultra Super Mini-Mold package | NEC 瑞萨 | | ||
SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | RENESAS 瑞萨 | | ||
SILICON TRANSISTOR NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | RENESAS 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif | NEC 瑞萨 | | ||
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59 | NEC 瑞萨 | | ||
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59 | NEC 瑞萨 | | ||
SILICON TRANSISTOR NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | RENESAS 瑞萨 | | ||
SILICON TRANSISTOR NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | RENESAS 瑞萨 | | ||
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59 | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61 | NEC 瑞萨 | | ||
SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61 | RENESAS 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif | NEC 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif | NEC 瑞萨 | | ||
SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package SOT-143 style (Pins for overseas use are ass | RENESAS 瑞萨 | | ||
SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package SOT-143 style (Pins for overseas use are ass | RENESAS 瑞萨 | | ||
SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package SOT-143 style (Pins for overseas use are ass | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61 | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61 | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package EIAJ: SC-70 | NEC 瑞萨 | | ||
SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | RENESAS 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package EIAJ: SC-70 | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package EIAJ: SC-70 | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package | NEC 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Ultra Super Mini-Mold package | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin ultra super minimold package | RENESAS 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Ultra Super Mini-Mold package | NEC 瑞萨 | |
2SC518产品属性
- 类型
描述
- 型号
2SC518
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
30000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
2016+ |
SOT-343 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
24+ |
SOT323 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
24+/25+ |
3000 |
原装正品现货库存价优 |
||||
NEC |
03+ |
SOT-343 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
22+ |
SOT-343 |
3000 |
只做原装正品 |
|||
NEC |
1822+ |
SOT-343 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
24+ |
SOT-243 |
5100 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
SOT-323 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
25+23+ |
Sot-243 |
32675 |
绝对原装正品全新进口深圳现货 |
2SC518芯片相关品牌
2SC518规格书下载地址
2SC518参数引脚图相关
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- 2SC5181
- 2SC5180
- 2SC5179
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- 2SC5155
- 2SC5154
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2SC518数据表相关新闻
2SC4617G-SOT323R-R-TG_UTC代理商
2SC4617G-SOT323R-R-TG_UTC代理商
2023-2-152SC5353BL-TO126CK-TG
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2023-1-302SC5015-T1
https://hch01.114ic.com/
2020-11-132SC5299
2SC5299，全新原装当天发货或门市自取0755-82732291.
2020-4-242SC4617TLR
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-22
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