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2SC518晶体管资料

2SC518别名：2SC518三极管、2SC518晶体管、2SC518晶体三极管
2SC518生产厂家：日本东芝公司
2SC518制作材料：Si-NPN
2SC518性质：电视（TV）_行输出（HA）
2SC518封装形式：直插封装
2SC518极限工作电压：140V
2SC518最大电流允许值：5A
2SC518最大工作频率：<1MHZ或未知
2SC518引脚数：2
2SC518最大耗散功率：50W
2SC518放大倍数：
2SC518图片代号：E-44
2SC518vtest：140
2SC518htest：999900
2SC518atest：5
2SC518wtest：50

2SC518代换 2SC518用什么型号代替：BU104,BU109,BU110,BU210,BU606,BU607,BU608,BUY20,BUY77,2SD916,2SD1154,3DK206C,

型号	功能描述	生产厂家企业	LOGO
2SC5180	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain \|S21e\|2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz \|S21e\|2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Supper Mini-Mold package	NEC 瑞萨	NEC
2SC5180	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD	RENESAS 瑞萨	RENESAS
2SC5180-T1	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD	RENESAS 瑞萨	RENESAS
2SC5180-T1	NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5181	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES\n• Low current consumption and high gain\n \|S21e\|2= 10.5 dBTYP.@ VCE= 2 V, IC= 7 mA, f = 2 GHz\n \|S21e\|2= 9.0 dBTYP.@VCE= 1 V, IC= 5 mA, f = 2 GHz\n• Ultra Super Mini-Mold package • Low current consumption and high gain\n \|S21e\|2= 10.5 dBTYP.@ VCE= 2 V, IC= 7 mA, f = 2 GHz\n \|S21e\|2= 9.0 dBTYP.@VCE= 1 V, IC= 5 mA, f = 2 GHz\n• Ultra Super Mini-Mold package;	RENESAS 瑞萨	RENESAS
2SC5181	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5181	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain \|S21e\|2= 10.5 dBTYP.@ VCE= 2 V, IC= 7 mA, f = 2 GHz \|S21e\|2= 9.0 dBTYP.@VCE= 1 V, IC= 5 mA, f = 2 GHz • Ultra Super Mini-Mold package	NEC 瑞萨	NEC
2SC5181-T1	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain \|S21e\|2= 10.5 dBTYP.@ VCE= 2 V, IC= 7 mA, f = 2 GHz \|S21e\|2= 9.0 dBTYP.@VCE= 1 V, IC= 5 mA, f = 2 GHz • Ultra Super Mini-Mold package	NEC 瑞萨	NEC
2SC5181-T1	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5182	SILICON TRANSISTOR NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5182	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif	NEC 瑞萨	NEC
2SC5182	NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59	NEC 瑞萨	NEC
2SC5182-T1	NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59	NEC 瑞萨	NEC
2SC5182-T1	SILICON TRANSISTOR NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5182-T2	SILICON TRANSISTOR NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5182-T2	NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59	NEC 瑞萨	NEC
2SC5183	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5183	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61	RENESAS 瑞萨	RENESAS
2SC5183	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif	NEC 瑞萨	NEC
2SC518383R	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif	NEC 瑞萨	NEC
2SC5183R	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package SOT-143 style (Pins for overseas use are ass	RENESAS 瑞萨	RENESAS
2SC5183R-T1	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package SOT-143 style (Pins for overseas use are ass	RENESAS 瑞萨	RENESAS
2SC5183R-T2	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package SOT-143 style (Pins for overseas use are ass	RENESAS 瑞萨	RENESAS
2SC5183-T1	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5183-T2	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5184	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5184	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5184	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif	NEC 瑞萨	NEC
2SC5184-T1	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5184-T2	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5185	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package	NEC 瑞萨	NEC
2SC5185	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif	NEC 瑞萨	NEC
2SC5185	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD	RENESAS 瑞萨	RENESAS
2SC5185-T1	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package	NEC 瑞萨	NEC
2SC5185-T2	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package	NEC 瑞萨	NEC
2SC5186	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Ultra Super Mini-Mold package	NEC 瑞萨	NEC
2SC5186	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin ultra super minimold package	RENESAS 瑞萨	RENESAS
2SC5186	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif	NEC 瑞萨	NEC
2SC5186-T1	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Ultra Super Mini-Mold package	NEC 瑞萨	NEC
2SC5182	NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS

2SC518产品属性

类型
描述
型号
2SC518
制造商
NEC
制造商全称
NEC
功能描述
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

2SC518供应商更多...

更新时间：2026-5-15 15:55:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市明盛嘉电子科技有限公司	2SC5185	NEC/日电电子	26+		43600	全新原装现货,假一赔十	询价
深圳市凌旭科技有限公司	2SC5185-T1	NEC	2016+	SOT-343	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
洪芯国际半导体（深圳）有限公司	2SC5185	NEC	26+	LQFP64	86720	全新原装正品价格最实惠假一赔百	询价
齐创科技(上海,北京,青岛)有限公司	2SC5185-T1	PANASONIC	23+	SOT23	5000	原装正品,假一罚十	询价
深圳市宏捷佳电子科技有限公司	2SC5185	NEC	2023+	SOT343	50000	原装现货	询价
深圳市纳艾斯科技有限公司	2SC5184-T1	NEC	24+	SOT323	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳诚思涵科技有限公司	2SC5185	NEC	18+	SOT-343	85600	保证进口原装可开17%增值税发票	询价
深圳市英科美电子有限公司	2SC5185	NEC	2223+	SOT-343	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市明嘉莱科技有限公司	2SC5185	NEC	25+	SOT-343	880000	明嘉莱只做原装正品现货	询价
深圳市创新迹电子有限公司	2SC5184	RENESAS/瑞萨	22+	SOT-323	20000	只做原装	询价

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2SC518规格书下载地址

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2SC4617G-SOT323R-R-TG_UTC代理商
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https://hch01.114ic.com/
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2SC5299
2SC5299，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SC4617TLR
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-22

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找IC，尽在114IC

2SC518晶体管资料

2SC518产品属性

2SC518供应商更多...

2SC518芯片相关品牌

2SC518规格书下载地址

2SC518参数引脚图相关

2SC518数据表相关新闻

2SC4617G-SOT323R-R-TG_UTC代理商

2SC5353BL-TO126CK-TG

2SC5569G-SOT89R-TG

2SC5015-T1

2SC5299

2SC4617TLR

DdatasheetPDF页码索引