2SC508晶体管资料

  • 2SC508别名:2SC508三极管、2SC508晶体管、2SC508晶体三极管

  • 2SC508生产厂家:日本东芝公司

  • 2SC508制作材料:Si-NPN

  • 2SC508性质:电视 (TV)_行输出 (HA)

  • 2SC508封装形式:直插封装

  • 2SC508极限工作电压:180V

  • 2SC508最大电流允许值:4A

  • 2SC508最大工作频率:25MHZ

  • 2SC508引脚数:2

  • 2SC508最大耗散功率:20W

  • 2SC508放大倍数

  • 2SC508图片代号:E-44

  • 2SC508vtest:180

  • 2SC508htest:25000000

  • 2SC508atest:4

  • 2SC508wtest:20

  • 2SC508代换 2SC508用什么型号代替:BD193,BDX22,BU406,BU407,BU408,BUY63,2N4240,2SD823,2SD1136,2SD1159,3DK205D,

2SC508价格

参考价格:¥0.5967

型号:2SC5084-O(TE85L,F) 品牌:Toshiba 备注:这里有2SC508多少钱,2025年最近7天走势,今日出价,今日竞价,2SC508批发/采购报价,2SC508行情走势销售排行榜,2SC508报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC508

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS • For power switching and TV horizontal output applications.

SAVANTIC

2SC508

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS • For power switching and TV horizontal output applications.

ISC

无锡固电

2SC508

Silicon PNP Power Transistors

文件:136.36 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

RENESAS

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

RENESAS

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

RENESAS

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

RENESAS

瑞萨

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13.5dB (f = 1 GHz)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

TOSHIBA

东芝

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT= 10 GHz TYP. • High Gain, Low Noise Figure |S21e|2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz APPLICATIONS • Designed for VHF~UHF band low noise amplifier applications.

ISC

无锡固电

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATNIONS)

VHF~UHF Band Low Noise Amplifier Applications ● Low noise figure, high gain. ● NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:992.44 Kbytes Page:7 Pages

TOSHIBA

东芝

High Gain Bandwidth Product

文件:267.66 Kbytes Page:5 Pages

ISC

无锡固电

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:992.44 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:997.21 Kbytes Page:7 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

文件:463.88 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:997.21 Kbytes Page:7 Pages

TOSHIBA

东芝

封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 7GHZ USM 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

文件:463.88 Kbytes Page:7 Pages

TOSHIBA

东芝

封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 7GHZ USM 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

Low Noise

文件:316.72 Kbytes Page:7 Pages

ISC

无锡固电

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:999 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:999 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:112.06 Kbytes Page:3 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:112.06 Kbytes Page:3 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type

文件:175.52 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type

文件:175.52 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:996.17 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:996.17 Kbytes Page:7 Pages

TOSHIBA

东芝

2SC508产品属性

  • 类型

    描述

  • 型号

    2SC508

  • 制造商

    ISC

  • 制造商全称

    Inchange Semiconductor Company Limited

  • 功能描述

    Silicon NPN Power Transistors

更新时间:2025-8-6 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
15250
原装现货,当天可交货,原型号开票
TOSHIBA
2016+
SOT-23
3500
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA
23+
SOT23/SOT323
20000
全新原装假一赔十
TOSHIBA/东芝
23+
SC-59
12700
买原装认准中赛美
TOSHIBA/东芝
25+
NA
880000
明嘉莱只做原装正品现货
TOSHIBA/东芝
22+
SOT-323
100000
代理渠道/只做原装/可含税
SEC
25+
TO3P
54648
百分百原装现货 实单必成 欢迎询价
TOSHIBA/东芝
25+
原装
32000
TOSHIBA/东芝全新特价2SC5084-Y即刻询购立享优惠#长期有货
TOSHIBA
24+
SOT143
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
TOSHIBA
24+/25+
21000
原装正品现货库存价优

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