2SC508晶体管资料

  • 2SC508别名:2SC508三极管、2SC508晶体管、2SC508晶体三极管

  • 2SC508生产厂家:日本东芝公司

  • 2SC508制作材料:Si-NPN

  • 2SC508性质:电视 (TV)_行输出 (HA)

  • 2SC508封装形式:直插封装

  • 2SC508极限工作电压:180V

  • 2SC508最大电流允许值:4A

  • 2SC508最大工作频率:25MHZ

  • 2SC508引脚数:2

  • 2SC508最大耗散功率:20W

  • 2SC508放大倍数

  • 2SC508图片代号:E-44

  • 2SC508vtest:180

  • 2SC508htest:25000000

  • 2SC508atest:4

  • 2SC508wtest:20

  • 2SC508代换 2SC508用什么型号代替:BD193,BDX22,BU406,BU407,BU408,BUY63,2N4240,2SD823,2SD1136,2SD1159,3DK205D,

2SC508价格

参考价格:¥0.5967

型号:2SC5084-O(TE85L,F) 品牌:Toshiba 备注:这里有2SC508多少钱,2025年最近7天走势,今日出价,今日竞价,2SC508批发/采购报价,2SC508行情走势销售排行榜,2SC508报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC508

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-66package •Highcollector-basebreakdownvoltage:VCBO=180V(min) APPLICATIONS •ForpowerswitchingandTVhorizontaloutputapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC508

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-66package •Highcollector-basebreakdownvoltage:VCBO=180V(min) APPLICATIONS •ForpowerswitchingandTVhorizontaloutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC508

SiliconPNPPowerTransistors

文件:136.36 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNEpitaxial

Features •Highgainbandwidthproduct fT=13.5GHzTyp •Highgain,lownoisefigure PG=18dBTyp,NF=1.1dBTypatf=900MHz Application VHF/UHFwidebandamplifier

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNPNEpitaxial

Features •Highgainbandwidthproduct fT=13.5GHzTyp •Highgain,lownoisefigure PG=18dBTyp,NF=1.1dBTypatf=900MHz Application VHF/UHFwidebandamplifier

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxial

Features •Highgainbandwidthproduct fT=13.5GHzTyp •Highgain,lownoisefigure PG=18dBTyp,NF=1.1dBTypatf=900MHz Application VHF/UHFwidebandamplifier

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxial

Features •Highgainbandwidthproduct fT=13.5GHzTyp •Highgain,lownoisefigure PG=18dBTyp,NF=1.1dBTypatf=900MHz Application VHF/UHFwidebandamplifier

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxial

Features •Highgainbandwidthproduct fT=13.5GHzTyp •Highgain,lownoisefigure PG=18dBTyp,NF=1.1dBTypatf=900MHz Application VHF/UHFwidebandamplifier

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNPNEpitaxial

Features •Highgainbandwidthproduct fT=13.5GHzTyp •Highgain,lownoisefigure PG=18dBTyp,NF=1.1dBTypatf=900MHz Application VHF/UHFwidebandamplifier

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=11dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=13dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=13dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=13dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

VHFtoUHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=13.5dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=13dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOESEAMPLIFIERAPPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=13dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HighGainBandwidthProduct

DESCRIPTION •HighGainBandwidthProductfT=10GHzTYP. •HighGain,LowNoiseFigure|S21e|2=13dBTYP.,NF=1.1dBTYP@f=1GHz APPLICATIONS •DesignedforVHF~UHFbandlownoiseamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATNIONS)

VHF~UHFBandLowNoiseAmplifierApplications ●Lownoisefigure,highgain. ●NF=1.1dB,|S21e|2=13dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:992.44 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HighGainBandwidthProduct

文件:267.66 Kbytes Page:5 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:992.44 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:997.21 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBATransistorSiliconNPNEpitaxialPlanarType

文件:463.88 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:997.21 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 7GHZ USM 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

TOSHIBATransistorSiliconNPNEpitaxialPlanarType

文件:463.88 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 7GHZ USM 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

LowNoise

文件:316.72 Kbytes Page:7 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:999 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:999 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:112.06 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:112.06 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarType

文件:175.52 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarType

文件:175.52 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:996.17 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:996.17 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SC508产品属性

  • 类型

    描述

  • 型号

    2SC508

  • 制造商

    ISC

  • 制造商全称

    Inchange Semiconductor Company Limited

  • 功能描述

    Silicon NPN Power Transistors

更新时间:2025-7-23 10:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
23+
SOT23
9890
原装原盒标现货可开发票
TOSHIBA/东芝
2511
SOT-143
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
HITACHI
19+
SOT-143
38000
24+
TO-3PML
10000
全新
TOSHIBA
24+
SOT143
5000
只做原装公司现货
TOSHIBA/东芝
24+
SOT-143
28235
郑重承诺只做原装进口现货
TOSHIBA
23+24
SOT23-6
136800
专业经营原装MOS管,二极管.三极管TVS瞬变抑制
TOSHIBA/东芝
2402+
SOT-323
8324
原装正品!实单价优!
TOSHIBA/东芝
24+
SOT-323
9600
原装现货,优势供应,支持实单!
TOSHIBA
24+
SOT-143
27000
原装现货假一赔十

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