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2SC501晶体管资料
2SC501别名：2SC501三极管、2SC501晶体管、2SC501晶体三极管
2SC501生产厂家：日本东芝公司
2SC501制作材料：Si-NPN
2SC501性质：通用型 （Uni）
2SC501封装形式：直插封装
2SC501极限工作电压：60V
2SC501最大电流允许值：0.3A
2SC501最大工作频率：200MHZ
2SC501引脚数：3
2SC501最大耗散功率：0.75W
2SC501放大倍数：
2SC501图片代号：C-40
2SC501vtest：60
2SC501htest：200000000
- 2SC501atest：0.3
2SC501wtest：0.75
2SC501代换 2SC501用什么型号代替：BC140,BC141,BC300,BC301,BC302,2N3053,3DG180H,
2SC501价格
参考价格：￥2.7467
型号：2SC5010-T1-A 品牌：CEL 备注：这里有2SC501多少钱，2026年最近7天走势，今日出价，今日竞价，2SC501批发/采购报价，2SC501行情走势销售排行榜，2SC501报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride | NEC 瑞萨 |   | ||
NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE68519 / 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc | CEL | | ||
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride | RENESAS 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride | RENESAS 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride | NEC 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION\nThe 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pa • Low Voltage Use.\n• High fT : 12.0 GHz TYP. (@ VCE= 3 V, IC= 10 mA, f = 2 GHz)\n• Low Cre : 0.4 pF TYP. (@ VCE= 3 V, IE= 0, f = 1 MHz)\n• Low NF : 1.5 dB TYP. (@ VCE= 3 V, IC= 3 mA, f = 2 GHz)\n• High |S21e|2: 8.5 dB TYP. (@ VCE= 3 V, IC= 10 mA, f = 2 GHz)\n• Ultra Super Mini Mold Package.; | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super mini mold Package | CEL | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT= 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product (fT = 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High Gain Bandwidth Product (fT = 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package | CEL | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT= 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product (fT = 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT= 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation • 4-pin super minimold (18) package | CEL | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation • 4-pin super minimold (18) package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation • 4-pin super minimold (18) package | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation | NEC 瑞萨 | | ||
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching) Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching ■ Features ● High collector to base voltage VCBO. ● High emitter to base voltage VEBO. | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) Silicon NPN epitaxial planer type For UHF band low-noise amplification ■ Features ● Low noise figure NF. ● High gain. ● High transition frequency fT. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. | PANASONIC 松下 | | ||
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 文件：241.06 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
封装/外壳：SOT-523 包装：托盘 描述：RF TRANS NPN 6V 12GHZ SOT523 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 文件：190.45 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
封装/外壳：SC-82A，SOT-343 包装：托盘 描述：RF TRANS NPN 12V 6.5GHZ SOT343 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD | NEC 瑞萨 | | ||
isc Silicon NPN Low Noise Bipolar Transistor 文件：272.65 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 文件：190.51 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 文件：190.31 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) 文件：182.73 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SC501产品属性
- 类型
描述
- 型号
2SC501
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
POWER |
22+ |
IGBT驱动器 |
20000 |
公司只有原装 品质保证 |
|||
POWER |
20+ |
IGBT-Driver |
31000 |
POWER原装主营型号-可开原型号增税票 |
|||
Power Integrations |
21+ |
36 |
只做原装鄙视假货15118075546 |
||||
CONCETP |
25+23+ |
DIP-18 |
44875 |
绝对原装正品全新进口深圳现货 |
|||
CONCEPT |
26+ |
IGBT |
6895 |
原厂全新正品旗舰店优势现货 |
|||
POWER INTEGRATION |
25+ |
MODULE |
1586 |
PI全系列在售 |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Power Integrations |
1740 |
16 |
优势货源原装正品 |
||||
TOSHIBA/东芝 |
20+ |
TO-220F |
1900 |
现货很近!原厂很远!只做原装 |
|||
SCALE |
最新 |
NA |
1550 |
原盒原包装现货原装假一罚十价优 |
2SC501芯片相关品牌
2SC501规格书下载地址
2SC501参数引脚图相关
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2SC501数据表相关新闻
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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