2SC501晶体管资料

  • 2SC501别名:2SC501三极管、2SC501晶体管、2SC501晶体三极管

  • 2SC501生产厂家:日本东芝公司

  • 2SC501制作材料:Si-NPN

  • 2SC501性质:通用型 (Uni)

  • 2SC501封装形式:直插封装

  • 2SC501极限工作电压:60V

  • 2SC501最大电流允许值:0.3A

  • 2SC501最大工作频率:200MHZ

  • 2SC501引脚数:3

  • 2SC501最大耗散功率:0.75W

  • 2SC501放大倍数

  • 2SC501图片代号:C-40

  • 2SC501vtest:60

  • 2SC501htest:200000000

  • 2SC501atest:0.3

  • 2SC501wtest:0.75

  • 2SC501代换 2SC501用什么型号代替:BC140,BC141,BC300,BC301,BC302,2N3053,3DG180H,

2SC501价格

参考价格:¥2.7467

型号:2SC5010-T1-A 品牌:CEL 备注:这里有2SC501多少钱,2025年最近7天走势,今日出价,今日竞价,2SC501批发/采购报价,2SC501行情走势销售排行榜,2SC501报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPNSILICONEPITAXIALTRANSISTOR3PINSULTRASUPERMINIMOLD

DESCRIPTION The2SC5010isanNPNepitaxialsilicontransistordesignedforuseinlownoiseandsmallsignalamplifiersfromVHFbandtoLband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydirectnitride

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONEPITAXIALTRANSISTOR3PINSULTRASUPERMINIMOLD

DESCRIPTION The2SC5010isanNPNepitaxialsilicontransistordesignedforuseinlownoiseandsmallsignalamplifiersfromVHFbandtoLband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydirectnitride

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONEPITAXIALTRANSISTOR

DESCRIPTION TheNE68519/2SC5010isanNPNepitaxialsilicontransistordesignedforuseinlownoiseandsmallsignalamplifiersfromVHFbandtoLband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydirec

CEL

California Eastern Labs

CEL

NPNSILICONEPITAXIALTRANSISTOR3PINSULTRASUPERMINIMOLD

DESCRIPTION The2SC5010isanNPNepitaxialsilicontransistordesignedforuseinlownoiseandsmallsignalamplifiersfromVHFbandtoLband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydirectnitride

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONEPITAXIALTRANSISTOR3PINSULTRASUPERMINIMOLD

DESCRIPTION The2SC5010isanNPNepitaxialsilicontransistordesignedforuseinlownoiseandsmallsignalamplifiersfromVHFbandtoLband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydirectnitride

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=6.5GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNEPITAXIALSILICONRFTRANSISTOR

FEATURES •HighGainBandwidthProduct(fT=6.5GHzTYP.) •LowNoise,HighGain •LowVoltageOperation •4-pinsuperminimoldPackage

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONRFTRANSISTOR

FEATURES •HighGainBandwidthProduct(fT=6.5GHzTYP.) •LowNoise,HighGain •LowVoltageOperation •4-pinsuperminimoldPackage

CEL

California Eastern Labs

CEL

NPNEPITAXIALSILICONRFTRANSISTOR

FEATURES •HighGainBandwidthProduct(fT=6.5GHzTYP.) •LowNoise,HighGain •LowVoltageOperation •4-pinsuperminimoldPackage

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=6.5GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=6.5GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=9GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONRFTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION 4-PINSUPERMINIMOLD FEATURES •HighGainBandwidthProduct(fT=9GHzTYP.) •LowNoise,HighGain •LowVoltageOperation •4-pinsuperminimoldPackage

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONRFTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION 4-PINSUPERMINIMOLD FEATURES •HighGainBandwidthProduct(fT=9GHzTYP.) •LowNoise,HighGain •LowVoltageOperation •4-pinsuperminimoldPackage

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=9GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=9GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=10GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNEPITAXIALSILICONRFTRANSISTOR

FEATURES •HighGainBandwidthProduct(fT=10GHzTYP.) •LowNoise,HighGain •LowVoltageOperation •4-pinsuperminimoldPackage

CEL

California Eastern Labs

CEL

NPNEPITAXIALSILICONRFTRANSISTOR

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION4-PINSUPERMINIMOLD FEATURES •HighGainBandwidthProduct(fT=10GHzTYP.) •LowNoise,HighGain •LowVoltageOperation •4-pinsuperminimoldPackage

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONRFTRANSISTOR

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION4-PINSUPERMINIMOLD FEATURES •HighGainBandwidthProduct(fT=10GHzTYP.) •LowNoise,HighGain •LowVoltageOperation •4-pinsuperminimoldPackage

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=10GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=10GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=12GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=12GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=12GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=12GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNEPITAXIALSILICONRFTRANSISTOR

FEATURES •HighfT:fT=12GHzTYP.@VCE=3V,IC=10mA,f=2GHz •Lownoiseandhighgain •Lowvoltageoperation •4-pinsuperminimold(18)package

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONRFTRANSISTOR

FEATURES •HighfT:fT=12GHzTYP.@VCE=3V,IC=10mA,f=2GHz •Lownoiseandhighgain •Lowvoltageoperation •4-pinsuperminimold(18)package

CEL

California Eastern Labs

CEL

NPNEPITAXIALSILICONRFTRANSISTOR

FEATURES •HighfT:fT=12GHzTYP.@VCE=3V,IC=10mA,f=2GHz •Lownoiseandhighgain •Lowvoltageoperation •4-pinsuperminimold(18)package

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=12GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSSUPERMINIMOLD

FEATURES •SmallPackage •HighGainBandwidthProduct(fT=12GHzTYP.) •LowNoise,HighGain •LowVoltageOperation

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SiliconNPNtriplediffusionplanertype(Forhighbreakdownvoltagehigh-speedswitching)

SiliconNPNtriplediffusionplanertype Forhighbreakdownvoltagehigh-speedswitching ■Features ●HighcollectortobasevoltageVCBO. ●HighemittertobasevoltageVEBO.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

SiliconNPNepitaxialplanertype(ForUHFbandlow-noiseamplification)

SiliconNPNepitaxialplanertype ForUHFbandlow-noiseamplification ■Features ●LownoisefigureNF. ●Highgain. ●HightransitionfrequencyfT. ●MiniPowertypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

NPNSILICONEPITAXIALTRANSISTOR3PINSULTRASUPERMINIMOLD

文件:241.06 Kbytes Page:12 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:SOT-523 包装:托盘 描述:RF TRANS NPN 6V 12GHZ SOT523 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION4-PINSUPERMINIMOLD

文件:190.45 Kbytes Page:9 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:SC-82A,SOT-343 包装:托盘 描述:RF TRANS NPN 12V 6.5GHZ SOT343 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

iscSiliconNPNLowNoiseBipolarTransistor

文件:272.65 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION4-PINSUPERMINIMOLD

文件:190.51 Kbytes Page:9 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

文件:190.31 Kbytes Page:9 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION4-PINSUPERMINIMOLD(18)

文件:182.73 Kbytes Page:10 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

2SC501产品属性

  • 类型

    描述

  • 型号

    2SC501

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

更新时间:2025-7-5 15:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Panasoni
SOT-23
30000
一级代理 原装正品假一罚十价格优势长期供货
PANASON/松下
24+
NA/
12000
优势代理渠道,原装正品,可全系列订货开增值税票
PANASONIC
23+
SOT-23
63000
原装正品现货
NEC
2023+
SOT-23
50000
原装现货
PANASONIC/松下
23+
MT2
6000
专注配单,只做原装进口现货
Panasonic
1822+
SOT-23
6852
只做原装正品假一赔十为客户做到零风险!!
NEC
24+
60000
PANASONIC
21+
MT2
1500
原装现货假一赔十
PANASONIC
20+
SOT-89
43000
原装优势主营型号-可开原型号增税票
PANASONIC
99+
MT2
1800
一级代理,专注军工、汽车、医疗、工业、新能源、电力

2SC501芯片相关品牌

  • CHENDA
  • FRANCEJOINT
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • Sensata
  • SICK
  • SKYWORKS
  • TDK
  • TOCOS

2SC501数据表相关新闻

  • 2SC4617G-SOT323R-R-TG_UTC代理商

    2SC4617G-SOT323R-R-TG_UTC代理商

    2023-2-15
  • 2SC5353BL-TO126CK-TG

    2SC5353BL-TO126CK-TG

    2023-1-30
  • 2SC5015-T1

    https://hch01.114ic.com/

    2020-11-13
  • 2SC5299

    2SC5299,全新原装当天发货或门市自取0755-82732291.

    2020-4-24
  • 2SC4617TLR

    深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生

    2020-4-22
  • 2SC4132T100R中文产品资料库

    2SC4132T100R中文产品资料库

    2019-2-15