NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • Low collector saturation voltage: VCE (sat)= 0.4 V (max) (IC= 5 A)

Low Vce(sat) Transistor (Strobe flash) (20V, 10A)

Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / IB= 4A / 50mA. 2) High current capacity, typically IC= 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage switching APPLICATIONS ·Display horizontal deflection output; switching regulator general purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage switching APPLICATIONS ·Display horizontal deflection output; switching regulator general purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage switching APPLICATIONS ·Display horizontal deflection output; switching regulator general purpose

Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)

High Voltage Switchihg Transistor Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage switching transistor ·Built-in damper diode APPLICATIONS ·Display horizontal deflection output; switching regulator and general purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage switching transistor ·Built-in damper diode APPLICATIONS ·Display horizontal deflection output; switching regulator and general purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage switching transistor ·Built-in damper diode APPLICATIONS ·Display horizontal deflection output; switching regulator and general purpose

Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • L

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The NE58219 / 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) •

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • L

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The NE58219 / 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) •

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Low Cr

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Low Cre :

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Low Cre :

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Low Cr

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

isc Silicon NPN RF Transistor

DESCRIPTION • Low Voltage Use • Ultra Super Mini Mold Package • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise and small signal amplifiers from VHF band to UHF band

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE68119 / 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by dir

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitr

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitr

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitr

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE68019 / 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

Power Amplifier Applications

文件：117.19 Kbytes Page：3 Pages

Power Amplifier Applications

文件：117.19 Kbytes Page：3 Pages

High frequency Transistor

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 10A CPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：241.21 Kbytes Page：4 Pages

Silicon NPN Power Transistor

文件：133.24 Kbytes Page：2 Pages

Silicon NPN Power Transistors

文件：184.23 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：241.21 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：241.21 Kbytes Page：4 Pages

Silicon NPN Power Transistor

文件：129.27 Kbytes Page：2 Pages

Silicon NPN Power Transistors

文件：185.75 Kbytes Page：4 Pages

Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)

Silicon NPN Power Transistors

文件：234 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：234 Kbytes Page：4 Pages

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

文件：242.27 Kbytes Page：12 Pages

封装/外壳：SOT-523 包装：托盘 描述：RF TRANS NPN 12V 4.5GHZ SOT523 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

文件：242.5 Kbytes Page：12 Pages

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

文件：241.03 Kbytes Page：12 Pages