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2SC50晶体管资料

2SC50别名：2SC50三极管、2SC50晶体管、2SC50晶体三极管
2SC50生产厂家：日本松下公司
2SC50制作材料：Ge-NPN
2SC50性质：射频/高频放大（HF）_开关管（S）
2SC50封装形式：直插封装
2SC50极限工作电压：20V
2SC50最大电流允许值：0.2A
2SC50最大工作频率：<1MHZ或未知
2SC50引脚数：3
2SC50最大耗散功率：0.1W
2SC50放大倍数：
2SC50图片代号：C-17
2SC50vtest：20
2SC50htest：999900
2SC50atest：0.2
2SC50wtest：0.1

2SC50代换 2SC50用什么型号代替：AC127,ASY28,ASY29,ASY73,ASY74,ASY75,2N1306,3BX81B,

2SC50价格

参考价格：￥2.0809

型号：2SC5001TLQ 品牌：Rohm 备注：这里有2SC50多少钱，2026年最近7天走势，今日出价，今日竞价，2SC50批发/采购报价，2SC50行情走势销售排行榜，2SC50报价。

型号	功能描述	生产厂家企业	LOGO
2SC5000	NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • Low collector saturation voltage: VCE (sat)= 0.4 V (max) (IC= 5 A)	TOSHIBA 东芝	TOSHIBA
2SC5001	丝印代码：TL；Low Vce(sat) Transistor (Strobe flash) (20V, 10A) Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / IB= 4A / 50mA. 2) High current capacity, typically IC= 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834.	ROHM 罗姆	ROHM
2SC5002	Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose) High Voltage Switchihg Transistor Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose	SANKEN 三垦	SANKEN
2SC5002	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage switching APPLICATIONS ·Display horizontal deflection output; switching regulator general purpose	ISC 无锡固电	ISC
2SC5002	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage switching APPLICATIONS ·Display horizontal deflection output; switching regulator general purpose	JMNIC 锦美电子	JMNIC
2SC5002	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage switching APPLICATIONS ·Display horizontal deflection output; switching regulator general purpose	SAVANTIC	SAVANTIC
2SC5003	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage switching transistor ·Built-in damper diode APPLICATIONS ·Display horizontal deflection output; switching regulator and general purpose	SAVANTIC	SAVANTIC
2SC5003	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage switching transistor ·Built-in damper diode APPLICATIONS ·Display horizontal deflection output; switching regulator and general purpose	JMNIC 锦美电子	JMNIC
2SC5003	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage switching transistor ·Built-in damper diode APPLICATIONS ·Display horizontal deflection output; switching regulator and general purpose	ISC 无锡固电	ISC
2SC5003	Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose) Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose	SANKEN 三垦	SANKEN
2SC5004	SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5004	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • L	NEC 瑞萨	NEC
2SC5004-A	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE58219 / 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) •	CEL	CEL
2SC5004-T1	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • L	NEC 瑞萨	NEC
2SC5004-T1	SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5004-T1-A	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE58219 / 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) •	CEL	CEL
2SC5005	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Low Cr	RENESAS 瑞萨	RENESAS
2SC5005	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Low Cre :	NEC 瑞萨	NEC
2SC5005-T1	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Low Cre :	NEC 瑞萨	NEC
2SC5005-T1	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Low Cr	RENESAS 瑞萨	RENESAS
2SC5006	SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5006	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid	NEC 瑞萨	NEC
2SC5006	isc Silicon NPN RF Transistor DESCRIPTION • Low Voltage Use • Ultra Super Mini Mold Package • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise and small signal amplifiers from VHF band to UHF band	ISC 无锡固电	ISC
2SC5006-T1	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid	NEC 瑞萨	NEC
2SC5006-T1	SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5006-T1-A	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid	RENESAS 瑞萨	RENESAS
2SC5007	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitr	RENESAS 瑞萨	RENESAS
2SC5007	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid	NEC 瑞萨	NEC
2SC5007	NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE68119 / 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by dir	CEL	CEL
2SC5007-T1	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid	NEC 瑞萨	NEC
2SC5007-T1	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitr	RENESAS 瑞萨	RENESAS
2SC5007-T1-A	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitr	RENESAS 瑞萨	RENESAS
2SC5008	NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid	RENESAS 瑞萨	RENESAS
2SC5008	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride	NEC 瑞萨	NEC
2SC5008	NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE68019 / 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc	CEL	CEL
2SC5008-T1	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride	NEC 瑞萨	NEC
2SC5008-T1	NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid	RENESAS 瑞萨	RENESAS
2SC5009	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid	NEC 瑞萨	NEC
2SC5009-T1	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid	NEC 瑞萨	NEC
2SC5010	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride	NEC 瑞萨	NEC
2SC5010	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride	RENESAS 瑞萨	RENESAS
2SC5010	NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE68519 / 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc	CEL	CEL
2SC5010-T1	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride	RENESAS 瑞萨	RENESAS
2SC5010-T1	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride	NEC 瑞萨	NEC
2SC5011	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation	NEC 瑞萨	NEC
2SC5011	NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package	RENESAS 瑞萨	RENESAS
2SC5011	NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super mini mold Package	CEL	CEL
2SC5011-T1	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation	NEC 瑞萨	NEC
2SC5011-T1	NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package	RENESAS 瑞萨	RENESAS
2SC5011-T2	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation	NEC 瑞萨	NEC
2SC5012	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation	NEC 瑞萨	NEC
2SC5012	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package	RENESAS 瑞萨	RENESAS
2SC5012-T1	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package	RENESAS 瑞萨	RENESAS
2SC5012-T1	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation	NEC 瑞萨	NEC
2SC5012-T2	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation	NEC 瑞萨	NEC
2SC5013	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT= 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation	NEC 瑞萨	NEC
2SC5013	NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • High Gain Bandwidth Product (fT = 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package	CEL	CEL
2SC5013	NPN EPITAXIAL SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product (fT = 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package	RENESAS 瑞萨	RENESAS
2SC5013-T1	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT= 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation	NEC 瑞萨	NEC
2SC5013-T1	NPN EPITAXIAL SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product (fT = 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package	RENESAS 瑞萨	RENESAS

2SC50产品属性

类型
描述
Status：
新设计非推荐
封装：
CPT3
包装数量：
2500
最小独立包装数量：
2500
包装形态：
Taping
RoHS：
Yes
Grade：
Standard
Package Code：
TO-252 (DPAK)
JEITA Package：
SC-63
Package Size[mm]：
6.5x9.5 (t=2.3)
Number of terminal：
3
Polarity：
NPN
Collector Power dissipation PC[W]：
1
Collector-Emitter voltage VCEO1[V]：
20.0
Collector current Io(Ic) [A]：
10.0
hFE：
120 to 390
hFE (Min.)：
120
hFE (Max.)：
390
Mounting Style：
Surface mount
Storage Temperature (Min.)[°C]：
-55
Storage Temperature (Max.)[°C]：
150

2SC50供应商更多...

更新时间：2026-5-15 9:03:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市博中泰实业有限公司	2SC5009-T1	NEC	25+	SOT-523	90000	全新原装现货	询价
深圳市明嘉莱科技有限公司	2SC5009-T1	NEC	25+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市英瑞尔电子科技有限公司	2SC5009-T1	NEC	24+	SOD423	64580	原装现货假一赔十	询价
深圳深宇韬电子科技有限公司	2SC5009-T1	NEC	2023+	SOT-523	8800	正品渠道现货终端可提供BOM表配单。	询价
深圳市振宏微科技有限公司	2SC5009-T1	423	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市科恒伟业电子有限公司	2SC5009-T1	NEC	2450+	SOD423	6540	只做原装正品现货或订货!终端客户免费申请样品!	询价
深圳市创新迹电子有限公司	2SC5009-T1	NEC	22+	SOT-523	20000	公司只有原装品质保证	询价
上海金庆电子技术有限公司	2SC5009-T1B	RENESAS	11+	SOT423	804	全新发货1-2天	询价
深圳市金华微盛电子有限公司	2SC5009-T1	RENESAS	19+	SOT-423	54000		询价
深圳市赛美科科技有限公司	2SC5009-T1	NEC		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价

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P109

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