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2SC495晶体管资料
2SC495别名：2SC495三极管、2SC495晶体管、2SC495晶体三极管
2SC495生产厂家：日本东芝公司
2SC495制作材料：Si-NPN
2SC495性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SC495封装形式：直插封装
2SC495极限工作电压：70V
2SC495最大电流允许值：1A
2SC495最大工作频率：100MHZ
2SC495引脚数：3
2SC495最大耗散功率：5W
2SC495放大倍数：
2SC495图片代号：B-21
2SC495vtest：70
2SC495htest：100000000
- 2SC495atest：1
2SC495wtest：5
2SC495代换 2SC495用什么型号代替：BD137,BD139,BD169,BD179,BD228,BD237,BD377,BD441,2SD794(A),3DK9D,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Dielectric breakdown voltage o | Panasonic 松下 |   | ||
isc Silicon NPN Power Transistor DESCRIPTION ● Silicon NPN triple diffusion planar type ● High Speed Switching ● 100 avalanche tested ● Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ● Designed for high breakdown voltage high speed switching | ISC 无锡固电 | | ||
SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP. | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP. | NEC 瑞萨 | | ||
SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP. | RENESAS 瑞萨 | | ||
SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP. | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP. | NEC 瑞萨 | | ||
SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP. | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP. | NEC 瑞萨 | | ||
SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP. | RENESAS 瑞萨 | | ||
SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP. | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre= 0.3 pF TYP. | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Reverse Transfer Capacitance Cre = 0.3 pF TYP. • 4-pin minimold Package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Reverse Transfer Capacitance Cre = 0.3 pF TYP. • 4-pin minimold Package | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre= 0.3 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre= 0.3 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP. | NEC 瑞萨 | | ||
SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | RENESAS 瑞萨 | | ||
SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP. | NEC 瑞萨 | | ||
SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | RENESAS 瑞萨 | | ||
Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE | RENESAS 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP. | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP. | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 文件：727.74 Kbytes Page：5 Pages | CEL California Eastern Labs | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD 文件：189.53 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：RF TRANS NPN 6V 12GHZ SOT143 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL California Eastern Labs | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 文件：727.74 Kbytes Page：5 Pages | CEL California Eastern Labs | | ||
封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：RF TRANS NPN 6V 12GHZ SOT143 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL California Eastern Labs | |
2SC495产品属性
- 类型
描述
- 型号
2SC495
- 功能描述
TRANS NPN HF 400VCEO 3A TO-220D
- RoHS
是
- 类别
分离式半导体产品 >> 晶体管(BJT) - 单路
- 系列
-
- 标准包装
1
- 系列
-
- 晶体管类型
NPN 电流 -
- 集电极(Ic)（最大）
1A 电压 -
- 集电极发射极击穿（最大）
30V
- Ib、Ic条件下的Vce饱和度（最大）
200mV @ 100mA，1A 电流 -
- 集电极截止（最大）
100nA 在某 Ic、Vce
- 时的最小直流电流增益(hFE)
300 @ 500mA，5V 功率 -
- 最大
710mW 频率 -
- 转换
100MHz
- 安装类型
表面贴装
- 封装/外壳
TO-236-3，SC-59，SOT-23-3
- 供应商设备封装
SOT-23-3（TO-236）
- 包装
Digi-Reel®
- 其它名称
MMBT489LT1GOSDKR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
2305 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
25+ |
SOT-323 |
12484 |
RENESAS/瑞萨原装特价2SC4959-T1-A即刻询购立享优惠#长期有货 |
|||
NEC |
22+ |
SOT323 |
25000 |
只有原装原装,支持BOM配单 |
|||
NEC |
2450+ |
SOT323-3 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
RENESAS |
23+ |
SOT-323 |
63000 |
原装正品现货 |
|||
2024 |
SOT-323 |
58209 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
||||
NEC |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
SOT-323 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
23+ |
699999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
NEC |
25+23+ |
SOT-70 |
30385 |
绝对原装正品全新进口深圳现货 |
2SC495规格书下载地址
2SC495参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
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- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SC4983
- 2SC4982
- 2SC4981
- 2SC4980
- 2SC4979
- 2SC4978
- 2SC4977
- 2SC4976
- 2SC497
- 2SC4969
- 2SC4968
- 2SC4967
- 2SC4966
- 2SC4965
- 2SC4964
- 2SC4963
- 2SC4962
- 2SC4961
- 2SC4960A
- 2SC4960
- 2SC496
- 2SC4959
- 2SC4958
- 2SC4957
- 2SC4956
- 2SC4955
- 2SC4954
- 2SC4953
- 2SC4944
- 2SC4943
- 2SC4942
- 2SC4941
- 2SC4940
- 2SC494
- 2SC4939F
- 2SC4939E
- 2SC4939D
- 2SC4939
- 2SC4938B
- 2SC4938A
- 2SC4938
- 2SC4937B
- 2SC4937A
- 2SC4937
- 2SC4935
- 2SC4934
- 2SC4933
- 2SC4932
- 2SC4931
- 2SC4928
- 2SC4927
- 2SC4926
- 2SC4924
- 2SC4923
- 2SC4922
- 2SC4921
- 2SC4920
- 2SC4919
- 2SC4917
- 2SC4916
- 2SC4915
2SC495数据表相关新闻
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2SC4617G-SOT323R-R-TG_UTC代理商
2023-2-152SC5353BL-TO126CK-TG
2SC5353BL-TO126CK-TG
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https://hch01.114ic.com/
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2SC5299，全新原装当天发货或门市自取0755-82732291.
2020-4-242SC4617TLR
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-222SC4132T100R中文产品资料库
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2019-2-15
DdatasheetPDF页码索引
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