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2SC495晶体管资料

  • 2SC495别名:2SC495三极管、2SC495晶体管、2SC495晶体三极管

  • 2SC495生产厂家:日本东芝公司

  • 2SC495制作材料:Si-NPN

  • 2SC495性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SC495封装形式:直插封装

  • 2SC495极限工作电压:70V

  • 2SC495最大电流允许值:1A

  • 2SC495最大工作频率:100MHZ

  • 2SC495引脚数:3

  • 2SC495最大耗散功率:5W

  • 2SC495放大倍数

  • 2SC495图片代号:B-21

  • 2SC495vtest:70

  • 2SC495htest:100000000

  • 2SC495atest:1

  • 2SC495wtest:5

  • 2SC495代换 2SC495用什么型号代替:BD137,BD139,BD169,BD179,BD228,BD237,BD377,BD441,2SD794(A),3DK9D,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Dielectric breakdown voltage o

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION ● Silicon NPN triple diffusion planar type ● High Speed Switching ● 100 avalanche tested ● Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ● Designed for high breakdown voltage high speed switching

ISC

无锡固电

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

NEC

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

RENESAS

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES\n• Low Noise, High Gain\n• Low Voltage Operation\n• Low Feedback Capacitance\n   Cre = 0.3 pF TYP. • Low Noise, High Gain\n• Low Voltage Operation\n• Low Feedback Capacitance\n   Cre = 0.3 pF TYP. ;

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP.

NEC

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP.

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP.

NEC

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP.

RENESAS

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP.

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.20 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre= 0.3 pF TYP.

NEC

瑞萨

NPN EPITAXIAL SILICON RF TRANSISTOR

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Reverse Transfer Capacitance Cre = 0.3 pF TYP. • 4-pin minimold Package

RENESAS

瑞萨

NPN EPITAXIAL SILICON RF TRANSISTOR

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Reverse Transfer Capacitance Cre = 0.3 pF TYP. • 4-pin minimold Package

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre= 0.3 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre= 0.3 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

NEC

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

RENESAS

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

NEC

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

RENESAS

瑞萨

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP.

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

NEC

瑞萨

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

文件:727.74 Kbytes Page:5 Pages

CEL

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD

文件:189.53 Kbytes Page:9 Pages

RENESAS

瑞萨

封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 6V 12GHZ SOT143 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

文件:727.74 Kbytes Page:5 Pages

CEL

封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 6V 12GHZ SOT143 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

2SC495产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    500V

  • Maximum Collector Emitter Saturation Voltage:

    1@0.3A@1.5AV

  • Maximum Collector Emitter Voltage:

    400V

  • Maximum DC Collector Current:

    3A

  • Maximum Emitter Base Voltage:

    7V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    2000mW

  • Maximum Transition Frequency:

    10(Typ)MHz

  • Type:

    NPN

更新时间:2026-5-17 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
SOT-323
18680
NEC
2019+
SOT-323
78550
原厂渠道 可含税出货
NEC
2023+
SOT-323
1750
原厂全新正品旗舰店优势现货
NEC
17+
SOT-323
6200
100%原装正品现货
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
NEC
16+
SOT-323
10000
进口原装现货/价格优势!
NEC
25+
NA
880000
明嘉莱只做原装正品现货
NEC
22+
SOT-323
20000
公司只有原装 品质保证
RENESAS/瑞萨
25+
SOT-323
12484
RENESAS/瑞萨原装特价2SC4959-T1-A即刻询购立享优惠#长期有货
NEC
18+
SOT-323
15000
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