VHF-Band Power Amp Applications?

VHF-Band Power Amplifier Applications Features · On-chip emitter ballast resistors.

Silicon NPN Triple Diffused

Features • High breakdown voltage • V(BR)CEO = 2000 V min Application High voltage amplifier

Silicon NPN Triple Diffused

Features • High breakdown voltage • V(BR)CEO = 2000 V min Application High voltage amplifier

丝印代码：QO；NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY, FM,RF,MIX, IF AMPLIFIER APPLICATIONS)

Radio-frequency bipolar transistor

Application Scope：FM band high frequency amplifier\nPolarity：NPN\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC 0.02 A \nCollector power dissipation PC 100 mW \nJunction temperature Tj 125 ℃ \nCollector-emitter voltage VCEO 30 V ;

2SC4916

2SC4916

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High speed ;high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output for high resolution display,colorTV • High speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High speed ;high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output for high resolution display,colorTV • High speed switching applications

Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO=1500V(Min) • High Switching Speed • Low Saturation Voltage • Built-in Damper Diod APPLICATIONS • Horizontal output applications for medium resolution displays & color TV

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Muting Circuit Applications

Muting Circuit Applications Features · Very small-sized package permitting 2SC4919- applied sets to be made smaller and slimmer. · Small output capacitance. · Low collector-to-emitter saturation voltage. · Small ON resistance.

Muting Circuit Applications

Muting Circuit Applications Features • Ultrasmall-sized package permitting applied sets to be made small and slim. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Low ON resistance.

Transistor-Bipolar Power Transistors

丝印代码：QO；High Frequency Amplifier Applications

文件：291.53 Kbytes Page：5 Pages

Silicon NPN Epitaxial Planar Type High Frequency Amplifier Applications

文件：587.66 Kbytes Page：5 Pages

High Frequency Amplifier Applications

文件：291.53 Kbytes Page：5 Pages

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 30V 550MHZ SSM 分立半导体产品 晶体管 - 双极（BJT）- 射频

High Frequency Amplifier Applications

文件：291.53 Kbytes Page：5 Pages

High Frequency Amplifier Applications

文件：291.53 Kbytes Page：5 Pages

封装/外壳：SC-75，SOT-416 包装：托盘 描述：RF TRANS NPN 30V 550MHZ SSM 分立半导体产品 晶体管 - 双极（BJT）- 射频

Silicon NPN Power Transistors

文件：297.76 Kbytes Page：4 Pages

NPN Epitaxial Planar Silicon Transistor Muting Circuit Applications