Power Bipolar Transistors

Power Bipolar Transistors

Power Bipolar Transistors

Power Bipolar Transistors

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • High breakdown voltage APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • High breakdown voltage APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • High breakdown voltage APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)

■ Features ● High transition frequency fT. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1700V(Min) • High Switching Speed • Low Saturation Voltage APPLICATIONS • Horizontal deflection output for high resolution display. • High speed switching power supply output applications.

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier

High Gain-Bandwidth Product

DESCRIPTION • High Gain-Bandwidth Product fT= 4.4 GHz TYP. • High Output Power 1 dB Power compression point Pcp = 24 dBm TYP. @ VCE = 5V , IC = 100 mA , f = 900 MHz APPLICATIONS • Designed for VHF ~ UHF wide band amplifier applications.

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

■ Features ● Low noise figure NF. ● High gain. ● High transition frequency fT. ● SSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Transistors (Selection Guide by Applications and Functions)

● High Speed Switch • VCO and High Frequency Type ● High Frequency Amplifiers and Others ● High Frequency Silicon Transistors for Transmitters

Transistors (Selection Guide by Applications and Functions)

● High Speed Switch • VCO and High Frequency Type ● High Frequency Amplifiers and Others ● High Frequency Silicon Transistors for Transmitters

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

■ Features ● High transition frequency fT. ● Small collector output capacitance Cob and common base reverse transfer capacitance Crb. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

文件：149.14 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：149.14 Kbytes Page：3 Pages

Silicon NPN epitaxial planar type

Silicon NPN Power Transistor

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Transistor-Small Signal Bip-TRSs for High Frequency Amplifier

Small-signal device - Small-signal transistor - High-Frequency for Tuners

封装/外壳：SC-89，SOT-490 包装：卷带（TR） 描述：RF TRANS NPN 10V 6GHZ SSMINI3-F3 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-89，SOT-490 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 10V 6GHZ SSMINI3-F1 分立半导体产品 晶体管 - 双极（BJT）- 射频

For high-frequency amplification/oscillation/mixing

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