Power Bipolar Transistors

Power Bipolar Transistors

Power Bipolar Transistors

Power Bipolar Transistors

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • High breakdown voltage APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • High breakdown voltage APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • High breakdown voltage APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)

■ Features ● High transition frequency fT. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1700V(Min) • High Switching Speed • Low Saturation Voltage APPLICATIONS • Horizontal deflection output for high resolution display. • High speed switching power supply output applications.

High Gain-Bandwidth Product

DESCRIPTION • High Gain-Bandwidth Product fT= 4.4 GHz TYP. • High Output Power 1 dB Power compression point Pcp = 24 dBm TYP. @ VCE = 5V , IC = 100 mA , f = 900 MHz APPLICATIONS • Designed for VHF ~ UHF wide band amplifier applications.

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier

Transistors (Selection Guide by Applications and Functions)

● High Speed Switch • VCO and High Frequency Type ● High Frequency Amplifiers and Others ● High Frequency Silicon Transistors for Transmitters

Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

■ Features ● Low noise figure NF. ● High gain. ● High transition frequency fT. ● SSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

■ Features ● High transition frequency fT. ● Small collector output capacitance Cob and common base reverse transfer capacitance Crb. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Transistors (Selection Guide by Applications and Functions)

● High Speed Switch • VCO and High Frequency Type ● High Frequency Amplifiers and Others ● High Frequency Silicon Transistors for Transmitters

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4810 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this trans

DARLINGTON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4810 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this tr

DARLINGTON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this tr

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this trans

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package t

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a packa

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for highprecision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for solenoid drivin

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for solenoid driving i

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for the

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for

High-Definition CRT Display Video Output Driver Applications???????

High-Definition CRT Display Video Output Driver Applications Applications · High definition CRT display video output driver, wide band amplifier applications and high frequency driver applications Features · High gain bandwidth product (fT=2.0GHz). · Large current capacity (I

High Definition CRT Display Video Output Applications??????????

High Definition CRT Display Video Output Applications Features • Adoption of FBET process. • High Gain Bandwidth product (fT=400MHz). • High breakdown voltage (VCEO=120V). • Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/NPN, 2.2pF/PNP. • Usage of

High Definition CRT Display Video Output Applications

High Definition CRT Display Video Output Applications Applications •High definition CRT display video output, wide-band amplifer. Features • Adoption of FBET process. • High fT: fT=300MHz(typ). • High breakdown voltage : VCEO=200V. • Small reverse transfer capacitance

High-Definition CRT Display Video Output Applications?

High Definition CRT Display Video Output Applications Features • Adoption of FBET process. • High fT : fT=300MHz. • High breakdown voltage : VCEO=200V. • Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.2pF/NPN, 2.7pF/PNP. • Possible to offer the 2SA18

Silicon NPN Epitaxial

Features • High frequency characteristics fT = 1100 MHz Typ • High voltage and small output capacitance VCEO = 100 V, Cob = 4.2 pF Typ • Suitable for wide band video amplifier Application High frequency amplifier

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V(Min) • High Switching Speed • Low Saturation Voltage APPLICATIONS • Horizontal deflection output for high resolution display. • High speed switching power supply output applications.

Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V(Min) • High Switching Speed • Low Saturation Voltage APPLICATIONS • Horizontal deflection output for high resolution display. • High speed switching power supply output applications.

SUPER HIGH SPEED SWITCHING TRANSISTORS

[Collmer] Super high speed switching transistors ● Suitable for 100kHz class switching regulators High speed switching transistors for ringing choke coverter ● The DC current gain is high. (min. 20) ● High speed switching performance Large SOA switching transistors ● An especially wide SOA

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • High voltage,high speed

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • High voltage,high speed

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • High voltage,high speed

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • High voltage,high speed

Switching Power Transistor(8A NPN)

Switching Power Transistor 8A NPN

Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

■ Features ● Low noise figure NF. ● High gain. ● High transition frequency fT. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

20V/5A Switch Applications

20V/5A Switching Applications Features • Large allowable collector dissipation. • Low saturation voltage. • Large current capacity. • Fast switching speed. • Usage of radial taping to meet automatic mounting. Applications • Strobes, power supplies, relay drivers, lamp drivers.

50V/4A Switching Applications

50V/4A Switching Applications Features • Adoption of FBET and MBIT processes. • Large allowable collector dissipation. • Low saturation voltage. • Wide ASO and large current capacity. • Usage of radial taping to meet automatic mounting. Applications • Power supplies, relay drivers, lamp dr

50V/4A Switching Applications

50V/4A Switching Applications Features • Adoption of FBET and MBIT processes. • Large allowable collector dissipation. • Low saturation voltage. • Wide ASO and large current capacity. • Usage of radial taping to meet automatic mounting. Applications • Power supplies, relay drivers, lamp dr

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 1.65GHz. APPLICATION For pre-amplifier stage of 50W, 1.65GHz, 28V.

NPN EPITAXIAL PLANAR TYPE(VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF=1.1dB, |S21e|2=12dB (f=1GHz)

NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

Power Bipolar Transistors

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 8.5dB (f = 2 GHz)

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 14dB (f = 1 GHz)

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 15.5dB (f = 1 GHz)

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for power amplifier and general purpose applications.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed ·Wide safe operating area APPLICATIONS ·For power supply

Silicon NPN Power Transistors

DESCRIPTION ··With TO-220Fa package ·Low collector saturation voltage ·High switching speed ·Wide safe operating area APPLICATIONS ·For power supply