NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80 mA)

Silicon NPN epitaxial planer type(For high speed switching)

Silicon NPN epitaxial planer type For high speed switching ■ Features ● High-speed switching. ● Low collector to emitter saturation voltage VCE(sat). ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN Epitaxial Planar Type

Features ● High-speed switching. ● Low collector to emitter saturation voltage VCE(sat). ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4783 is NPN silicon epitaxial transistor. FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V • Can be automatically mounted

NPN SILICON EPITAXIAL TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4783 is NPN silicon epitaxial transistor. FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V • Can be automatically mounted

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

Silicon NPN epitaxial planer type(For intermediate frequency amplification)

Features ● High transition frequency fT. ● Satisfactory linearity of forward current transfer ratio hFE. ● Allowing supply with the radial taping

Power Bipolar Transistors

Silicon NPN Triple Diffused

Features • High speed switching time: 0.5 µs max • High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A • Suitable for large size CRT Display Application Character Display Horizontal Deflection Output

Medium Power Amplifier Applications

文件：94.49 Kbytes Page：3 Pages

TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS

Medium Power Amplifier Applications

文件：94.49 Kbytes Page：3 Pages

Silicon NPN epitaxial planer type(For high speed switching)

Transistor

NPN SILICON EPITAXIAL TRANSISTOR

文件：257.45 Kbytes Page：7 Pages

包装：卷带（TR） 描述：TRANSISTOR NPN USM SC-75 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS

文件：67.72 Kbytes Page：1 Pages

isc Silicon NPN Power Transistor

文件：273.65 Kbytes Page：2 Pages