NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super mini mold package. FEATURES • High fT: 5.5 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Low Cob: 0.7 pF TYP.

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold package. FEAT

isc Silicon NPN RF Transistor

DESCRIPTION ·High Current-Gain—Bandwidth Product fT= 5.5 GHz TYP. @VCE= 5 V, IC= 5 mA, f = 1.0 GHz ·Low COB 0.7pF TYP. @VCB= 5 V, IE= 0, f = 1.0 MHz APPLICATIONS ·Designed for use in UHF oscillator and mixer.

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold package. FEAT

NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super mini mold package. FEATURES • High fT: 5.5 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Low Cob: 0.7 pF TYP.

NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super mini mold package. FEATURES • High fT: 5.5 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Low Cob: 0.7 pF TYP.

NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super mini mold package. FEATURES • High fT: 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Low Co

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold package. FEATU

isc Silicon NPN RF Transistor

DESCRIPTION • High Current-Gain—Bandwidth Product fT = 5.0 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz • Low COB 0.9pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS • Designed for use in UHF oscillator and mixer.

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold package. FEATU

NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super mini mold package. FEATURES • High fT: 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Low Co

NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super mini mold package. FEATURES • High fT: 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Low Co

800V/20mA Switching Applications

800V/20mA Switching Applications Features · High breakdown voltage. · Small Cob. · High reliability (Adoption of HVP process).

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

NPN Epitaxial Planar Silicon Transistor

Features • Low collector-to-emitter saturation voltage. • Small-sized package.

Low-Frequency General-Purpose Amp Applications?

Low-Frequency General-Purpose Amp Applications Features • Small-sized package permitting the 2SA1753/2SC4577-applied sets to be made small and slim. • Low collector-to-emitter saturation voltage.

NPN Triple Diffused(for 900V/50mA Switching)

900V/50mA Switching Applications Features · High breakdown voltage. · Small Cob. · Wide ASO. · High reliability (Adoption of HVP process).

900V/20mA Switching Applications

900V/20mA Switching Applications Features • High breakdown voltage. • Small Cob. • Wide ASO. • High reliability (Adoption of HVP process).

isc Silicon NPN Power Transistor

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isc Silicon NPN Darlington Power Transistor

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