SiliconNPNEpitaxial

Features ●Highemitter-basevoltage:VEBO=25V(min). ●HighreversehFE:ReversehFE=150(typ.)(VCE=-2V,IC=-4mA). ●Lowonresistance:RON=1Ù(typ.)(IB=5mA). ●HighDCcurrentgain:hFE=2001200. ●Smallpackage.

NPNEPITAXIALTYPE(FORMUTINGANDSWITCHIGAPPLICATIONS)

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

SiliconNPNEpitaxialType(PCTprocess)ForMutingandSwitchingApplications

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ForMutingandSwitchingApplications

文件：281.26 Kbytes Page：5 Pages

ForMutingandSwitchingApplications

文件：281.26 Kbytes Page：5 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 0.3A SC70 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个