Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 550V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):2.0V(Max) @IC= 8.0A APPLICATIONS · High Voltage Color Display Horizontal Deflection Output

Very High-Definition Color Display Horizontal Deflection Output Applications???

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process.

isc Silicon NPN Power Transistor

DESCRIPTION • High Switching Speed • High Breakdown Voltage- : V(BR)CBO= 1500V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for horizontal deflection output applications.

PNP Power Transistor

Features ◇High speed(tf=100ns type) ◇High breakdown voltage(VCBO=1500V) ◇High reliability(adoption of HVP process) ◇Adoption of MBIT process Applications ◇Designed for horizontal deflection output applications.

250 Watt NPN Triple Diffused Planar Silicon Transistor

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250 Watt NPN Triple Diffused Planar Silicon Transistor

文件：529.87 Kbytes Page：3 Pages