Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=10kΩ, R2=10kΩ. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2KΩ, R2=10kΩ. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, dirver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Large current capacity : IC=500mA.

NPN Epitaxial Planar Type Silicon Transistor

DIFFERENTIAL AMP, VERY HIGH-SPEED SWITCHING APPLICATIONS Features • The 2SC3925 is formed with two chips, being equivalent to the 2SC3775, placed in one package.

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor(High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications.

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC3928A is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for low frequency voltage application. ​​​​​​​Complementary with ISA1530AC1. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max ● Excellent linearity of D

For Low Frequency Amplify Application Sillcon Npn Epitaxial Type (Mini type)

[Isahaya Electronics Corporation] DESCRIPTION 2SC3928A is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for low frequency voltage application. ​​​​​​​ FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max ● Excellent linearity of

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC3928A is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for low frequency voltage application. ​​​​​​​Complementary with ISA1530AC1. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max ● Excellent linearity of D

Silicon NPN Epitaxial Planar

Features • Low noise voltage NV. • High forward current transfer ratio hFE.

Silicon NPN epitaxial planer type(For low-frequency output amplification)

For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A ■ Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine p

Silicon NPN epitaxial planer type(For low-frequency output amplification)

For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A ■ Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine p

Silicon NPN Epitaxial Planar

Features • Low noise voltage NV. • High forward current transfer ratio hFE.

Silicon NPN Power Transistors

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Silicon NPN Triple Diffused Planar Transistor

文件：35.36 Kbytes Page：1 Pages

Silicon NPN Triple Diffused Planar Transistor

文件：34.89 Kbytes Page：1 Pages

FOR LOW FREQUENCY AMPLIFY APPLICATION

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FOR LOW FREQUENCY AMPLIFY APPLICATION

文件：138.97 Kbytes Page：2 Pages

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：138.77 Kbytes Page：2 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 35V 0.05A SMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 55V 0.05A SMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个