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2SC390晶体管资料

  • 2SC390别名:2SC390三极管、2SC390晶体管、2SC390晶体三极管

  • 2SC390生产厂家:日本东芝公司

  • 2SC390制作材料:Si-NPN

  • 2SC390性质:甚高频 (VHF)_超高频/特高频 (UHF)

  • 2SC390封装形式:直插封装

  • 2SC390极限工作电压

  • 2SC390最大电流允许值

  • 2SC390最大工作频率:1GHZ

  • 2SC390引脚数:3

  • 2SC390最大耗散功率

  • 2SC390放大倍数

  • 2SC390图片代号:D-13

  • 2SC390vtest:0

  • 2SC390htest:1000000000

  • 2SC390atest:0

  • 2SC390wtest:0

  • 2SC390代换 2SC390用什么型号代替:BF180,BF357,BF377,BF378,BF689,BF763,2N2857,3DG73B,

2SC390价格

参考价格:¥1.5572

型号:2SC3902S 品牌:ONSemi 备注:这里有2SC390多少钱,2026年最近7天走势,今日出价,今日竞价,2SC390批发/采购报价,2SC390行情走势销售排行榜,2SC390报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Switching Applications

Switching Application ( with Bias Resistance R1 = 4.7kΩ) Features • On-chip bias resistance : R1 = 4.7kohms • Small-sized package : CP Applications • Switching circuits, inverter circuits, interface circuits, driver circuits

SANYO

三洋

PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ • Small-sized package : SPA Applications • Switching circuits, inverter circuits, interface circuits, driver circuits

SANYO

三洋

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features High VCEO, Large IC, complementary to 2SA1507. Applications Color TV audio output, converters, inverters.

FOSHAN

蓝箭电子

160V/1.5A Switching Applications

160V / 1.5A Switching Applications Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 160V(Min) ·Large Current Capacity ·Complement to Type 2SA1507 APPLICATIONS ·Color TV audio output, converters, inverters.

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA1507 ·Large current capacity ·High breakdown voltage APPLICATIONS ·Color TV audio output ,converters,inverters

SAVANTIC

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

ONSEMI

安森美半导体

Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)

For 2GHz band low-noise amplification ■Features ● High transition frequency fT. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

PANASONIC

松下

High-voltage Amplifier Transistor(120V, 50mA)

Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.

ROHM

罗姆

High-voltage Amplifier Transistor

■ Features ● High Breakdown Voltage ● Complementary to 2SA1514K

KEXIN

科信电子

NPN 50mA 120V High Voltage Amplifier transistors

Features 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types : 2SA1579 (UMT3) / 2SA1514K (SMT3) 3) Complex transistors : IMX8 (SMT6) 4) Lead Free/RoHS Compliant.

ROHM

罗姆

NPN 50mA 120V High Voltage Amplifier transistors

Features 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types : 2SA1579 (UMT3) / 2SA1514K (SMT3) 3) Complex transistors : IMX8 (SMT6) 4) Lead Free/RoHS Compliant.

ROHM

罗姆

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to 2SA1516

WINGS

永盛电子

Silicon NPN Power Transistors

文件:176.91 Kbytes Page:4 Pages

SAVANTIC

160V / 1.5A Switching Applications

文件:437.79 Kbytes Page:7 Pages

SANYO

三洋

160V / 1.5A Switching Applications

文件:66.58 Kbytes Page:5 Pages

SANYO

三洋

Trans GP BJT NPN 160V 1.5A 3-Pin TO-126ML

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

双极晶体管

FOSHAN

蓝箭电子

TRANS NPN 160V 1.5A TO126ML

ONSEMI

安森美半导体

Bipolar Transistor

文件:335.69 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件:335.69 Kbytes Page:7 Pages

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 160V 1.5A TO126ML 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

丝印代码:1E;NPN Transistor

文件:425.4 Kbytes Page:4 Pages

PJSEMI

平晶半导体

NPN 50mA 120V High Voltage Amplifier transistors

文件:358.15 Kbytes Page:8 Pages

ROHM

罗姆

High-voltage Amplifier Transistor (120V, 50mA)

文件:75.1 Kbytes Page:3 Pages

ROHM

罗姆

High-voltage Amplifier Transistor

文件:132.67 Kbytes Page:3 Pages

ROHM

罗姆

NPN Transistors

文件:1.33226 Mbytes Page:4 Pages

KEXIN

科信电子

NPN Transistors

文件:1.33226 Mbytes Page:4 Pages

KEXIN

科信电子

NPN Transistors

文件:1.33226 Mbytes Page:4 Pages

KEXIN

科信电子

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 120V 0.05A SMT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

Silicon NPN Power Transistors

文件:125.36 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:126.96 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:83.11 Kbytes Page:3 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

文件:285.09 Kbytes Page:2 Pages

ISC

无锡固电

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

文件:238.74 Kbytes Page:4 Pages

MITSUBISHI

三菱电机

2SC390产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    180V

  • Maximum Collector Emitter Saturation Voltage:

    0.45@50mA@500mAV

  • Maximum Collector Emitter Voltage:

    160V

  • Maximum DC Collector Current:

    1.5A

  • Maximum Emitter Base Voltage:

    6V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    1500mW

  • Maximum Transition Frequency:

    120(Typ)MHz

  • Type:

    NPN

更新时间:2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANJIT/强茂
23+
SOT-223
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
SYFOREVER
25+
SOT-223
20300
SYFOREVER原装特价2SC3904W即刻询购立享优惠#长期有货
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
PANASONIC
25+23+
New
31875
绝对原装正品现货,全新深圳原装进口现货
Panasonic/松下
24+
SOT-23
10163
新进库存/原装
Panasonic
22+
SOT-23
20000
公司只有原装 品质保证
NK/南科功率
2511
SOT-89
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
PANASONIC
原厂封装
9800
原装进口公司现货假一赔百
PANASONI
23+
SOT23
3000
原装正品假一罚百!可开增票!
PANASONIC/松下
21+
SOT-23
3678000

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