Switching Applications

Switching Application ( with Bias Resistance R1 = 4.7kΩ) Features • On-chip bias resistance : R1 = 4.7kohms • Small-sized package : CP Applications • Switching circuits, inverter circuits, interface circuits, driver circuits

PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ • Small-sized package : SPA Applications • Switching circuits, inverter circuits, interface circuits, driver circuits

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 160V(Min) ·Large Current Capacity ·Complement to Type 2SA1507 APPLICATIONS ·Color TV audio output, converters, inverters.

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

160V/1.5A Switching Applications

160V / 1.5A Switching Applications Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA1507 ·Large current capacity ·High breakdown voltage APPLICATIONS ·Color TV audio output ,converters,inverters

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features High VCEO, Large IC, complementary to 2SA1507. Applications Color TV audio output, converters, inverters.

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)

For 2GHz band low-noise amplification ■Features ● High transition frequency fT. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

High-voltage Amplifier Transistor(120V, 50mA)

Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.

High-voltage Amplifier Transistor

■ Features ● High Breakdown Voltage ● Complementary to 2SA1514K

NPN 50mA 120V High Voltage Amplifier transistors

Features 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types : 2SA1579 (UMT3) / 2SA1514K (SMT3) 3) Complex transistors : IMX8 (SMT6) 4) Lead Free/RoHS Compliant.

NPN 50mA 120V High Voltage Amplifier transistors

Features 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types : 2SA1579 (UMT3) / 2SA1514K (SMT3) 3) Complex transistors : IMX8 (SMT6) 4) Lead Free/RoHS Compliant.

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to 2SA1516

isc Silicon NPN Power Transistor

DESCRIPTION • High Speed Switching • High Collector-Base Breakdown Voltage- : V(BR)CEO= 800V(Min) • Good Linearity of hFE APPLICATIONS • Designed for high speed switching applications

Silicon NPN Triple-Diffused Junction Mesa Type

[Panasonic] Silicon NPN Triple-Diffusion Junction Mesa Type High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Wide area of safety operation (ASO) ● Good linearity of hFE

Switching Applications(with Bias Resistance)

Switching Applications (With Bias Resistance) Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Application · Switching circuits, inverters circuits, inferface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Swicthing circuits, inverter circuits, interface circuits, dirver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. • Small-sized package : SPA. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=10kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. • Small-sized package : SPA. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=10kΩ, R2=10kΩ. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2KΩ, R2=10kΩ. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, dirver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Large current capacity : IC=500mA.

NPN Epitaxial Planar Type Silicon Transistor

DIFFERENTIAL AMP, VERY HIGH-SPEED SWITCHING APPLICATIONS Features • The 2SC3925 is formed with two chips, being equivalent to the 2SC3775, placed in one package.

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor(High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications.

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications

For Low Frequency Amplify Application Sillcon Npn Epitaxial Type (Mini type)

[Isahaya Electronics Corporation] DESCRIPTION 2SC3928A is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for low frequency voltage application. ​​​​​​​ FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max ● Excellent linearity of

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC3928A is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for low frequency voltage application. ​​​​​​​Complementary with ISA1530AC1. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max ● Excellent linearity of D

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC3928A is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for low frequency voltage application. ​​​​​​​Complementary with ISA1530AC1. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max ● Excellent linearity of D

丝印代码：SR；Silicon NPN epitaxial planer type(For low-frequency output amplification)

For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A ■ Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine p

Silicon NPN Epitaxial Planar

Features • Low noise voltage NV. • High forward current transfer ratio hFE.

Silicon NPN Epitaxial Planar

Features • Low noise voltage NV. • High forward current transfer ratio hFE.

丝印代码：TR；Silicon NPN epitaxial planer type(For low-frequency output amplification)

For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A ■ Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine p

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 ■ Features ● Optimum for RF amplification of FM/AM radios. ● High transition frequency fT. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through t

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High transition frequency fT. ● Optimum for RF amplification of FM/AM radios. ● For high-frequency amplification complementary to 2SA1532. APPLICATIONS ● Audio frequency general purpose amplifier.

TRANSISTOR (NPN)

FEATURES • For high-frequency Amplification Complementary to 2SA1532 • Optimum for RF amplification of FM/AM radios • High transition frequency fT

Silicon NPN Epitaxial Planar

Features • Optimum for RF amplification of FM/AM radios. • High transition frequency fT.

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● For high-frequency Amplification Complementary to 2SA1532 ● Optimum for RF amplification of FM/AM radios ● High transition frequency fT

SOT-323 Plastic-Encapsulate Transistors

FEATURES For high-frequency Amplification Complementary to 2SA1532 Optimum for RF amplification of FM/AM radios High transition frequency fT

NPN Silicon Epitaxial Planar Transistor

FEATURE ● For high-frequency Amplification Complementary to 2SA1532 ● Optimum for RF amplification of FM/AM radios ● High transition frequency fT

NPN Silicon Epitaxial Planar Transistor

FEATURES • High transition frequency fT. • Optimum for RF amplification of FM/AM radios. • For high-frequency amplification complementary to 2SA1532. APPLICATIONS • Audio frequency general purpose amplifier.

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)

Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Silicon NPN epitaxial planer type(For high-frequency wide-band low-noise amplification)

Silicon NPN epitaxial planar type For high-frequency wide-band low-noise amplification ■ Features • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing