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2SC379晶体管资料
2SC379别名：2SC379三极管、2SC379晶体管、2SC379晶体三极管
2SC379生产厂家：日本东芝公司
2SC379制作材料：Si-NPN
2SC379性质：射频/高频放大 （HF）
2SC379封装形式：直插封装
2SC379极限工作电压：30V
2SC379最大电流允许值：0.1A
2SC379最大工作频率：300MHZ
2SC379引脚数：3
2SC379最大耗散功率：0.2W
2SC379放大倍数：
2SC379图片代号：A-20
2SC379vtest：30
2SC379htest：300000000
- 2SC379atest：0.1
2SC379wtest：0.2
2SC379代换 2SC379用什么型号代替：BF198,BF199,BF224,BF225,BF505,3DG120C,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Definition CRT Display, Video Output Applications??? High-Definiton CRT Display Video Output Applications Features · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |   | ||
Transistors for TV Display Video Output Use Transistors for TV Display Video Output Use | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
High-hFE, Low-Frequency General-Purpose Amp Applications????????? High hFE, Low-Frequency General-Purpose Amplifier Applications Features • Adoption of FBET process. • High DC current gain. • High VEBO (VEBO≥25V). • High reverse hFE (150 typ). • Small ON resistance [Ron=1Ω (IB=5mA)] Applications • Low frequency general-purpose amplifiers, drivers, mutin | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
Silicon NPN Epitaxial Application UHF local oscillator | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High VCBO • High speed switching • Low collector saturation voltage APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High VCBO • High speed switching • Low collector saturation voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High VCBO • High speed switching • Low collector saturation voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High VCBO • High speed switching • Low collector saturation voltage APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High breakdown voltage • High speed switching • Low collector saturation voltage APPLICATIONS • For high breakdown voltate ,high-speed switching applications | SAVANTIC | | ||
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with one screw | Panasonic 松下 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High breakdown voltage • High speed switching • Low collector saturation voltage APPLICATIONS • For high breakdown voltate ,high-speed switching applications | ISC 无锡固电 | | ||
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with one screw | Panasonic 松下 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High breakdown voltage • High speed switching • Low collector saturation voltage APPLICATIONS • For high breakdown voltate ,high-speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High breakdown voltage • High speed switching • Low collector saturation voltage APPLICATIONS • For high breakdown voltate ,high-speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High breakdown voltage ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For high voltalge ,high-speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High breakdown voltage ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For high voltalge ,high-speed switching applications | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION · • Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) • Low Collector Saturation Voltage • High Speed Switching APPLICATIONS • Designed for high speed switching applications | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) • Low Collector Saturation Voltage • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) • Low Collector Saturation Voltage • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) • Low Collector Saturation Voltage • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | ISC 无锡固电 | | ||
Complement to Type 2SA1480 文件：184.69 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon NPN transistor in a TO-126F Plastic Package. 文件：1.14798 Mbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
High Gain 文件：129.5 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
Silicon NPN Power Transistors 文件：110.1 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：110.1 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：138.49 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：205.76 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Triple-Diffused Planar Type 文件：80.22 Kbytes Page：1 Pages | Panasonic 松下 | | ||
Silicon PNP Triple-Diffused Planar Type 文件：80.22 Kbytes Page：1 Pages | Panasonic 松下 | |
2SC379产品属性
- 类型
描述
- 型号
2SC379
- 制造商
SANYO Semiconductor Co Ltd
- 功能描述
TRANS NPN 20V 0.5A TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAT |
24+ |
NA/ |
3370 |
原装现货,当天可交货,原型号开票 |
|||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
MAT |
1738+ |
TO-220F |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
MAT |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
MAT |
23+ |
TO-220 |
86540 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
Hitachi |
25+23+ |
Sot-23 |
30039 |
绝对原装正品全新进口深圳现货 |
|||
24+ |
TO-220FA |
10000 |
全新 |
||||
MAT |
17+ |
TO-220 |
31518 |
原装正品 可含税交易 |
|||
PANASONIC/松下 |
24+ |
TO-220F |
60000 |
||||
MAT |
24+ |
原厂封装 |
1700 |
原装现货假一罚十 |
2SC379规格书下载地址
2SC379参数引脚图相关
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2SC379数据表相关新闻
2SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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DdatasheetPDF页码索引
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