POWER TRANSISTOR

POWER TRANSISTORS

Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features • Low noise figure NF • High forward transfer gain |S21e|2 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magaz

Printer Driver Applications

Printer Driver Applications Features · High DC current gain. · Large current capacityu and wide ASO. · Contains a Zener diode across collector and base. Applications · Switching of L load (motor drivers, printer drivers, relay drivers).

Silicon NPN epitaxial planer type(For UHF amplification)

Silicon NPN epitaxial planar type For UHF amplification ■ Features • Possible with the small current and low voltage • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Silicon NPN Epitaxial Planar type

Features ● Possible with the small current and low voltage ● High transition frequency fT ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Low-Frequency Driver Applications

Low-Frequency Driver Applications Features • Adoption of FBET process. • AF amp, AF power amp. • High breakdown voltage : VCEO>80V

NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

HIGH CURRENT SWITCHING APPLICATIONS ​​​​​​​ • Low Collector Saturation Voltage: VCE (sat)= 0.4V (Max.) • High-Speed Switching Time: tstg= 1.0μs (Typ.) • Complementary to 2SA1451A

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451 APPLICATIONS ·Designed for high current switching applications

HIGH CURRENT SWITCHING APPLICATIONS

High-Current Switching Applications ​​​​​​​ • Low collector saturation voltage: VCE (sat)= 0.4 V (max) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1451A

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：TRANS NPN 10V 0.08A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 7V 0.01A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Epitaxial Planar Silicon Transistor Low-Frequency Driver Applications

NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

Power transistor for high-speed switching applications

High-Current Switching Applications

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High-Current Switching Applications

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High-Current Switching Applications

文件：148.16 Kbytes Page：5 Pages

High-Current Switching Applications

文件：153 Kbytes Page：5 Pages