POWER TRANSISTOR

POWER TRANSISTORS

Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features • Low noise figure NF • High forward transfer gain |S21e|2 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magaz

Printer Driver Applications

Printer Driver Applications Features · High DC current gain. · Large current capacityu and wide ASO. · Contains a Zener diode across collector and base. Applications · Switching of L load (motor drivers, printer drivers, relay drivers).

Silicon NPN Epitaxial Planar type

Features ● Possible with the small current and low voltage ● High transition frequency fT ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Silicon NPN epitaxial planer type(For UHF amplification)

Silicon NPN epitaxial planar type For UHF amplification ■ Features • Possible with the small current and low voltage • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Low-Frequency Driver Applications

Low-Frequency Driver Applications Features • Adoption of FBET process. • AF amp, AF power amp. • High breakdown voltage : VCEO>80V

NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

HIGH CURRENT SWITCHING APPLICATIONS ​​​​​​​ • Low Collector Saturation Voltage: VCE (sat)= 0.4V (Max.) • High-Speed Switching Time: tstg= 1.0μs (Typ.) • Complementary to 2SA1451A

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451 APPLICATIONS ·Designed for high current switching applications

HIGH CURRENT SWITCHING APPLICATIONS

High-Current Switching Applications ​​​​​​​ • Low collector saturation voltage: VCE (sat)= 0.4 V (max) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1451A

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：TRANS NPN 10V 0.08A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Epitaxial Planar Silicon Darlington Transistor Printer Driver Applications

Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 7V 0.01A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

三极管(BJT)

High-Current Switching Applications

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High-Current Switching Applications

文件：148.16 Kbytes Page：5 Pages

High-Current Switching Applications

文件：148.16 Kbytes Page：5 Pages

High-Current Switching Applications

文件：153 Kbytes Page：5 Pages