2SC367晶体管资料

  • 2SC367别名:2SC367三极管、2SC367晶体管、2SC367晶体三极管

  • 2SC367生产厂家

  • 2SC367制作材料:Si-NPN

  • 2SC367性质:通用型 (Uni)

  • 2SC367封装形式:直插封装

  • 2SC367极限工作电压:50V

  • 2SC367最大电流允许值:0.8A

  • 2SC367最大工作频率:<1MHZ或未知

  • 2SC367引脚数:3

  • 2SC367最大耗散功率:0.3W

  • 2SC367放大倍数

  • 2SC367图片代号:A-20

  • 2SC367vtest:50

  • 2SC367htest:999900

  • 2SC367atest:0.8

  • 2SC367wtest:0.3

  • 2SC367代换 2SC367用什么型号代替:BC337(A),BC377,BC637,BC737,2N2220,2N2221,2N2222,3DK4A,

型号 功能描述 生产厂家&企业 LOGO 操作

NPNEPITAXIALTYPE(STOROBOFLASH,MEDIUMOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgainandexcellenthFElinearity :hFE(1)=140to600(VCE=1V,IC=0.5A) :hFE(2)=70(min),200(typ.),(VCE=1V,IC=2A) •Lowsaturationvoltage:VCE(sat)=0.5V(m

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(STOROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgainandexcellenthFElinearity :hFE=140to450(VCE=2V,IC=0.5A) :hFE=70(min)(VCE=2V,IC=4A) •Lowsaturationvoltage:VCE(sat)=1.0V(max)(IC=4A,IB=0.1A) •Hi

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(HIGHVOLTAGECONTROL,PLASMADISPLAY,NIXIETYBEDRIVER,CATHODERAYTUBEBRIGHTNESSCONTROLAPPLICATIONS)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(SWITCHING,SOLENOIDDRIVEAPPLICATIONS)

SwitchingApplications SolenoidDriveApplications •HighDCcurrentgain:hFE=500(min)(IC=400mA) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.5V(max) (IC=300mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-VoltageAmp,High-VoltageSwitchingApplications

900V/100mAHigh-VoltageAmplifierHigh-VoltageSwitchingApplications Features ·Highbreakdownvoltage(VCEOmin=900V). ·SmallCob(Cobtyp=2.8pF). ·WideASO(AdoptionofMBITprocess). ·Highreliability(AdoptionofHVPprocess). Applications ·Highvoltageamplifiers. ·High

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-VoltageAmp,High-VoltageSwitchingApplications

900V/300mAHigh-VoltageAmplifierHigh-VoltageSwitchingApplications Features •Highbreakdownvoltage(VCEOmin=900V). •SmallCob(Cobtyp=5.0pF). •WideASO(AdoptionofMBITprocess). •Highreliability(AdoptionofHVPprocess). Applications •Highvoltageamplifiers. •High-voltage

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNTripleDiffusedPlanarTransistor(SwitchingRegulatorandGeneralPurpose)

Application:SwitchingRegulatorandGeneralPurpose

SankenSanken electric

三垦三垦电气株式会社

Sanken

SiliconNPNPowerTransistors

ESCRIPTION ·HighVoltageSwitching ·WithTO-3PNpackage APPLICATIONS ·SwitchingRegulator ·GeneralPurpose

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·Highvoltageswitchingtransistor APPLICATIONS ·Switchingregulatorandgeneralpurposeapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·Highvoltageswitchingtransistor APPLICATIONS ·Switchingregulatorandgeneralpurposeapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·Highvoltageswitchingtransistor APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·Highvoltageswitchingtransistor APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Highvoltageswitchingtransistor APPLICATIONS •Forswitchingregulatorand generalpurposeapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNTripleDiffusedPlanarTransistor(SwitchingRegulatorandGeneralPurpose)

SiliconNPNTripleDiffusedPlanarTransistor(HighVoltageSwitchingTransistor)

SankenSanken electric

三垦三垦电气株式会社

Sanken

SiliconNPNtriplediffusionplanartransistor

FEATURES •High-speedswitching •HighcollectortobasevoltageVCBO •SatisfactorylinearityoffowardcurrenttransferratiohFE •TO-3Ppackagewhichcanbeinstalledtotheheatsinkwithonescrew APPLICATIONS •Switchingregulatorandgeneralpurpose

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件:125.66 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件:125.66 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件:125.92 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件:125.92 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:SC-71 包装:散装 描述:TRANS NPN 300V 0.1A MSTM 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

SwitchingApplicationsSolenoidDriveApplications

文件:148.65 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SwitchingApplicationsSolenoidDriveApplications

文件:148.65 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

900V/100mAHigh-VoltageAmplifierHigh-VoltageSwitchingApplications

文件:97.92 Kbytes Page:3 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

iscSiliconNPNPowerTransistor

文件:278.34 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

文件:277.96 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

文件:279.83 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

文件:178.57 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:99.2 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:99.2 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:99.2 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:190.55 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:183.76 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:183.76 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

2SC367产品属性

  • 类型

    描述

  • 型号

    2SC367

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-9240V .4A .4W ECB

更新时间:2025-7-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO/三洋
22+
TO-220
100000
代理渠道/只做原装/可含税
SANYO/三洋
24+
NA/
118
优势代理渠道,原装正品,可全系列订货开增值税票
SANYO/三洋
25+
TO-220
54558
百分百原装现货 实单必成 欢迎询价
TOSHIBA
24+/25+
1122
原装正品现货库存价优
sanyo
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
SANYO/三洋
25+
NA
880000
明嘉莱只做原装正品现货
SANYO/三洋
21+
TO-220
33200
优势供应 实单必成 可13点增值税
TOSHIBA
23+
NA
356
专做原装正品,假一罚百!
三年内
1983
只做原装正品
TOSHIBA
24+
DIP-3
3000

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