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2SC350晶体管资料
2SC350别名:2SC350三极管、2SC350晶体管、2SC350晶体三极管
2SC350生产厂家:日本日立公司
2SC350制作材料:Si-NPN
2SC350性质:通用型 (Uni)_低噪放大 (ra)
2SC350封装形式:直插封装
2SC350极限工作电压:30V
2SC350最大电流允许值:0.1A
2SC350最大工作频率:180MHZ
2SC350引脚数:3
2SC350最大耗散功率:0.2W
2SC350放大倍数:
2SC350图片代号:C-47
2SC350vtest:30
2SC350htest:180000000
- 2SC350atest:0.1
2SC350wtest:0.2
2SC350代换 2SC350用什么型号代替:BC108,BC169,BC172,BC183,BC184,BC208,BC238,BC239,BC383,BC548,BC549,BC583,2N2220,2N2221,2N2222,3DG120A,
2SC350价格
参考价格:¥3.3854
型号:2SC3503CSTU 品牌:Fairchild 备注:这里有2SC350多少钱,2025年最近7天走势,今日出价,今日竞价,2SC350批发/采购报价,2SC350行情走势销售排行榜,2SC350报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
800MHz band. 24V wideband linear power amplifier For communication industry Features OHigh efficiency, high output, and linearity at 860MHz. PO=4.8W, Gain=10.8dBTYP. (classA, Vcc=24V, Pi.=0.4W, f=860MHz) ・PC=10.7W, Rc=65%TYP. (classC, Vcc=25V, Pi.=2.5W, f=900MHz) oBuilt-in emitter stabilization resistor. oWide safe operating area. oCan withstand VS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Ultrahigh-Definition CRT Display, Video Output Applications??? Ultrahigh-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥200V. • Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. • Adoption of FBET process | SANYO 三洋 | |||
Transistors for TV Display Video Output Use Transistors for TV Display Video Output Use | SANYO 三洋 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO = 200 V • Complement to Type 2SA1380 APPLICATIONS • Designed for ultrahigh-definition CRT display, video output applicaitons | ISC 无锡固电 | |||
NPN Epitaxial Silicon Transistor Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie | Fairchild 仙童半导体 | |||
High-Definition CRT Display, Video Output High-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥300V. • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. • Adoption of MBIT process. | SANYO 三洋 | |||
Transistors for TV Display Video Output Use Transistors for TV Display Video Output Use | SANYO 三洋 | |||
NPN Epitaxial Silicon Transistor Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie | Fairchild 仙童半导体 | |||
NPN Epitaxial Silicon Transistor Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie | Fairchild 仙童半导体 | |||
NPN Epitaxial Silicon Transistor Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie | Fairchild 仙童半导体 | |||
NPN Epitaxial Silicon Transistor Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie | Fairchild 仙童半导体 | |||
High-Definition CRT Display, Video Output Applications???? High-Definition CRT Display, Video Output Applications Features · High fT. · Small reverse transfer capacitance. | SANYO 三洋 | |||
Transistors for TV Display Video Output Use Transistors for TV Display Video Output Use | SANYO 三洋 | |||
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING
| Fuji 富士通 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High-speed switching • High collector-base voltage VCBO • Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS • For high-speed switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High-speed switching • High collector-base voltage VCBO • Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS • For high-speed switching applications | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High-speed switching • High collector-base voltage VCBO • Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS • For high-speed switching applications | ISC 无锡固电 | |||
Silicon NPN triple diffusion planar type(For high-speed switching) Silicon NPN triple diffusion planar type For high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be installed to the heat sink with one screw | Panasonic 松下 | |||
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be installed to the heat sink with one screw | Panasonic 松下 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications | JMNIC 锦美电子 | |||
VHF AMPLIFIER VHF TV TUNER MIXER, OSCILLATOR 文件:37.53 Kbytes Page:1 Pages | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon NPN transistor in a TO-126F Plastic Package. 文件:999.9 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | |||
双极晶体管 | FOSHAN 蓝箭电子 | |||
NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display, Video Output Applications | ONSEMI 安森美半导体 | |||
NPN Epitaxial Silicon Transistor | ONSEMI 安森美半导体 | |||
NPN Epitaxial Silicon Transistor 文件:159.04 Kbytes Page:6 Pages | Fairchild 仙童半导体 | |||
isc Silicon NPN Power Transistor 文件:321.33 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc Silicon NPN Power Transistor 文件:321.33 Kbytes Page:2 Pages | ISC 无锡固电 | |||
NPN Epitaxial Silicon Transistor 文件:159.04 Kbytes Page:6 Pages | Fairchild 仙童半导体 | |||
封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS NPN 300V 0.1A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
NPN Epitaxial Silicon Transistor 文件:159.04 Kbytes Page:6 Pages | Fairchild 仙童半导体 | |||
NPN Epitaxial Silicon Transistor 文件:159.04 Kbytes Page:6 Pages | Fairchild 仙童半导体 | |||
封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS NPN 300V 0.1A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
NPN Epitaxial Silicon Transistor 文件:159.04 Kbytes Page:6 Pages | Fairchild 仙童半导体 | |||
Silicon NPN Power Transistors 文件:145.53 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon NPN Power Transistors 文件:156.42 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:156.42 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:145.36 Kbytes Page:4 Pages | SAVANTIC | |||
Silicon NPN Power Transistors 文件:186.07 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:186.07 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:144.34 Kbytes Page:4 Pages | SAVANTIC | |||
Silicon NPN Power Transistors 文件:187.99 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:187.99 Kbytes Page:4 Pages | JMNIC 锦美电子 |
2SC350产品属性
- 类型
描述
- 型号
2SC350
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASON/松下 |
24+ |
NA/ |
11318 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MAT |
25+ |
TO-3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
MAT |
24+ |
TO-3P |
990000 |
明嘉莱只做原装正品现货 |
|||
PANASONI |
2023+ |
TOP-3F |
50000 |
原装现货 |
|||
NEC |
NEW |
TO252 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
HITACHI/日立 |
21+ |
SOT-23 |
33200 |
优势供应 实单必成 可13点增值税 |
|||
PANASONIC |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
PANASONIC松下 |
17+ |
TO-3P |
55 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI/日立 |
23+ |
SOT-23 |
24190 |
原装正品代理渠道价格优势 |
|||
24+ |
TOP-3FA |
10000 |
全新 |
2SC350芯片相关品牌
2SC350规格书下载地址
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2SC350数据表相关新闻
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2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
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只做原装假一赔十
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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DdatasheetPDF页码索引
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