Silicon NPN Epitaxial Planar

Application FM RF/IF amplifier

High-hFE, Low-Frequency General-Purpose Amp Applications??????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features • Adoption of FBET process. • High DC current gain (hFE=500 to 2000). • High breakdown voltage (VCEO≥100V). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High VEBO (VEBO≥15V). • Small Cob (Cob=1.8pF t

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the printed circu

NPN Silicon Triple Diffused Transistor

Features ● High-speed switching ● High collector-base voltage (Emitter open) VCBO ● Satisfactory linearity of forward current transfer ratio hFE

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the printed circu

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.2V(Max)@ (IC= 5A) APPLICATIONS · Designed for use in general purpose power amplifier and switching applications

Silicon NPN Transistor

NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications

6A; 30W; V(ceo): 400V; NPN transistor. For switching regulation