PNP/NPN Epitaxial Planar Silicon Transistors

Switching Applications (with Bias Resistance) Features • Built-in bias resistor (R1 = 22KΩ, R2 = 22KΩ) • Small-sized package(SPA) Applications Switching circuit, inverter, interface circuit, driver

PNP/ NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications (with Bias Resistance) Features • Built-in bias resistor (R1 = 46kΩ, R2 = 23kΩ) • Small-sized package(SPA) Applications Switching circuit, inverter, interface circuit, driver

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • Built-in bias resistor (R1 = 10kΩ, R2 = 10kΩ) • Small-sized package(SPA) Applications Switching circuit, inverter, interface circuit, driver

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3404 is a silicon NPN epitaxial planar type specifically designed for VHF power amplifier applications. APPLICATIONS For output state 1W power amplifiers in VHF band portable type radio sets.

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 μs (max) tf = 1.0 μs (max), (IC = 0.3 A) • High collector breakdown voltage: VCEO = 800 V

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·DC Current Gain- : hFE= 6(Min)@ IC= 1mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

NPN Silicon Triple Diffused Transistor

Features Excellent Switching Times tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.3A High colletor Breakdown Voltage: VCEO=800V

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·DC Current Gain- : hFE= 6(Min)@ IC= 1mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications

Silicon PNP Triple-Diffused Planar Type

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RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE

Power transistor for high-speed switching applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type

文件：186.61 Kbytes Page：5 Pages

Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications

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Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications

文件：184.24 Kbytes Page：5 Pages

TOSHIBA Transistor Silicon NPN Triple Diffused Type

文件：186.61 Kbytes Page：5 Pages

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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Silicon NPN Power Transistors

文件：151.69 Kbytes Page：3 Pages